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APT12M80B

APT12M80B
Mfr. #:
APT12M80B
Hersteller:
Microchip / Microsemi
Beschreibung:
MOSFET FG, MOSFET, 800V, TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT12M80B Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT12M80B DatasheetAPT12M80B Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
13 A
Rds On - Drain-Source-Widerstand:
800 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
80 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
335 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Vorwärtstranskonduktanz - Min:
11 S
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
1
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
14 ns
Gewichtseinheit:
0.229281 oz
Tags
APT12, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) TO-247 Tube
***rochip
MOSFET MOS8 800 V 12 A TO-247
***hardson RFPD
POWER MOSFET TRANSISTOR
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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Verfügbarkeit
Aktie:
40
Auf Bestellung:
2023
Menge eingeben:
Der aktuelle Preis von APT12M80B dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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