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BFP842ESDH6327XTSA1

BFP842ESDH6327XTSA1
Mfr. #:
BFP842ESDH6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors RF BIP TRANSISTORS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BFP842ESDH6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
BFP842ESDH6327XTSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - Bipolar (BJT) - RF
Serie
BFP842
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
842ESD BFP BFP842ESDH6327XT H6327 SP000943012
Montageart
SMD/SMT
Paket-Koffer
SC-82A, SOT-343
Technologie
SiGe
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
SOT-343
Leistung max
120mW
Transistor-Typ
NPN
Strom-Kollektor-Ic-Max
40mA
Spannungs-Kollektor-Emitter-Breakdown-Max
3.7V
DC-Strom-Verstärkung-hFE-Min-Ic-Vce
150 @ 15mA, 2.5V
Frequenz-Übergang
60GHz
Rauschzahl-dB-Typ-f
0.65dB @ 3.5GHz
Gewinnen
26dB
Pd-Verlustleistung
120 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Arbeitsfrequenz
60 GHz
Kollektor-Emitter-Spannung-VCEO-Max
3.25 V
Emitter-Basis-Spannung-VEBO
4.1 V
Kontinuierlicher Kollektorstrom
40 mA
Tags
BFP842ESDH, BFP842, BFP84, BFP8, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BFP842ESD Series NPN 120 mW 3.7 V 40 mA Low Noise Bipolar RF Transistor -SOT-343
***Components
In a Pack of 20, Infineon BFP842ESDH6327XTSA1 NPN Transistor, 40 mA, 2.9 V, 3.25 V, 4-Pin SOT-343
***et Europe
Trans GP BJT NPN 3.25V 0.04A 4-Pin SOT-343 T/R
***ark
RF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343
***ronik
NPN RF-Trans 3,25V 40mA SOT343
***i-Key
RF TRANS NPN 3.7V 60GHZ SOT343
***ical
BFP 842ESD H6327
***ment14 APAC
Prices include import duty and tax. RF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:3.25V; Transition Frequency ft:57GHz; Power Dissipation Pd:120mW; DC Collector Current:40mA; DC Current Gain hFE:150hFE; RF Transistor Case:SOT-343; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
TRANSISTOR RF NPN 3.25V 57GHZ SOT343; Polarità Transistor:NPN; Tensione Collettore-Emettitore V(br)ceo:3.25V; Frequenza di Transizione ft:57GHz; Dissipazione di Potenza Pd:120mW; Corrente di Collettore CC:40mA; Guadagno di Corrente CC hFE:150hFE; Case Transistor RF:SOT-343; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry standard package with visible leads. | Summary of Features: Robust very low noise amplifier based on Infineons reliable, high volume; SiGe:C technology; Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness; High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA; High transition frequency fT = 60 GHz enables very low noise figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA; Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA; Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V (3.3 V, 3.6 V requires corresponding collector resistor); Low power consumption, ideal for mobile applications; Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads | Target Applications: Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth; Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo), Satellite radio (SDARs, DAB and C-band LNB) and C-band LNB (1st and 2nd stage LNA); Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee
Infineon Drone/Multicopter Solutions
Infineon Drone/Multicopter Solutions offer a portfolio of high-quality products with a wide spectrum of components. These cost-effective system solutions feature everything from power electronics to controllers and sensors. Design a highly efficient multicopter with an excellent user experience capable of light weight, longer flying times, better safety and reliability.Learn More
BFPx4 RF Transistors
Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More
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Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.
Teil # Mfg. Beschreibung Aktie Preis
BFP842ESDH6327XTSA1
DISTI # V72:2272_06391074		Infineon Technologies AGTrans RF BJT 3.25V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		2284
  • 1000:$0.1714
  • 500:$0.1719
  • 250:$0.1911
  • 100:$0.2124
  • 25:$0.3081
  • 10:$0.3424
  • 1:$0.3901
BFP842ESDH6327XTSA1
DISTI # V36:1790_06391074		Infineon Technologies AGTrans RF BJT 3.25V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		0
    BFP842ESDH6327XTSA1
    DISTI # BFP842ESDH6327XTSA1CT-ND    		Infineon Technologies AGRF TRANS NPN 3.7V 60GHZ SOT343
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2933In Stock
    • 1000:$0.1854
    • 500:$0.2400
    • 100:$0.3054
    • 10:$0.4090
    • 1:$0.4800
    BFP842ESDH6327XTSA1
    DISTI # BFP842ESDH6327XTSA1DKR-ND    		Infineon Technologies AGRF TRANS NPN 3.7V 60GHZ SOT343
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2933In Stock
    • 1000:$0.1854
    • 500:$0.2400
    • 100:$0.3054
    • 10:$0.4090
    • 1:$0.4800
    BFP842ESDH6327XTSA1
    DISTI # BFP842ESDH6327XTSA1TR-ND    		Infineon Technologies AGRF TRANS NPN 3.7V 60GHZ SOT343
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 75000:$0.1324
    • 30000:$0.1356
    • 15000:$0.1430
    • 6000:$0.1536
    • 3000:$0.1641
    BFP842ESDH6327XTSA1
    DISTI # 26195746    		Infineon Technologies AGTrans RF BJT 3.25V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R
    RoHS: Compliant    		2284
    • 1000:$0.1843
    • 500:$0.1848
    • 250:$0.2054
    • 100:$0.2283
    • 48:$0.3011
    BFP842ESDH6327XTSA1
    DISTI # BFP842ESDH6327XTSA1    		Infineon Technologies AGTrans GP BJT NPN 3.25V 0.04A 4-Pin SOT-343 T/R - Tape and Reel (Alt: BFP842ESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1339
    • 18000:$0.1369
    • 12000:$0.1409
    • 6000:$0.1469
    • 3000:$0.1519
    BFP842ESDH6327XTSA1
    DISTI # BFP842ESDH6327XTSA1    		Infineon Technologies AGTrans GP BJT NPN 3.25V 0.04A 4-Pin SOT-343 T/R - Bulk (Alt: BFP842ESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 2273
    Container: Bulk    		Americas - 0
    • 22730:$0.1389
    • 11365:$0.1419
    • 6819:$0.1469
    • 4546:$0.1519
    • 2273:$0.1579
    BFP842ESDH6327XTSA1
    DISTI # SP000943012    		Infineon Technologies AGTrans GP BJT NPN 3.25V 0.04A 4-Pin SOT-343 T/R (Alt: SP000943012)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1399
    • 18000:€0.1509
    • 12000:€0.1779
    • 6000:€0.2179
    • 3000:€0.2799
    BFP842ESDH6327XTSA1
    DISTI # 50Y1762    		Infineon Technologies AGBipolar - RF Transistor, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, 150 RoHS Compliant: Yes0
    • 1000:$0.1990
    • 500:$0.2170
    • 250:$0.2330
    • 100:$0.2500
    • 50:$0.2980
    • 25:$0.3440
    • 10:$0.3920
    • 1:$0.4750
    BFP 842ESD H6327
    DISTI # 726-BFP842ESDH6327    		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
    RoHS: Compliant    		2512
    • 1:$0.4600
    • 10:$0.3830
    • 100:$0.2340
    • 1000:$0.1810
    • 3000:$0.1540
    BFP842ESDH6327XTSA1
    DISTI # 726-BFP842ESDH6327XT    		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
    RoHS: Compliant    		79
    • 1:$0.4600
    • 10:$0.3830
    • 100:$0.2340
    • 1000:$0.1810
    • 3000:$0.1540
    BFP842ESDH6327XTSA1Infineon Technologies AGSmall Signal Bipolar Transistor
    RoHS: Compliant    		33000
    • 500:$0.1500
    • 1000:$0.1500
    • 100:$0.1600
    • 25:$0.1700
    • 1:$0.1800
    BFP842ESDH6327XTSA1
    DISTI # 1702256    		Infineon Technologies AGRF TRANSISTOR 3GHZ LOWNOISE SIGE SOT-343, RL5680
    • 9000:£0.1350
    • 6000:£0.1440
    • 3000:£0.1540
    BFP842ESDH6327XTSA1
    DISTI # 2480677    		Infineon Technologies AGRF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343
    RoHS: Compliant    		1230
    • 100:$0.3610
    • 10:$0.5890
    • 1:$0.7070
    BFP842ESDH6327XTSA1
    DISTI # 2480677RL    		Infineon Technologies AGRF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343
    RoHS: Compliant    		0
    • 100:$0.3610
    • 10:$0.5890
    • 1:$0.7070
    BFP842ESDH6327XTSA1
    DISTI # 2480677    		Infineon Technologies AGRF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT3431450
    • 500:£0.1440
    • 250:£0.1570
    • 100:£0.1690
    • 25:£0.2980
    • 5:£0.3310
    Bild Teil # Beschreibung
    BFP842ESDH6327XTSA1

    Mfr.#: BFP842ESDH6327XTSA1

    OMO.#: OMO-BFP842ESDH6327XTSA1

    		 RF Bipolar Transistors RF BIP TRANSISTORS
    BFP842ESD

    Mfr.#: BFP842ESD

    OMO.#: OMO-BFP842ESD-INFINEON-TECHNOLOGIES

    		 Neu und Original
    BFP842ESD BOARD

    Mfr.#: BFP842ESD BOARD

    OMO.#: OMO-BFP842ESD-BOARD-INFINEON-TECHNOLOGIES

    		 Neu und Original
    BFP842ESD H6327

    Mfr.#: BFP842ESD H6327

    OMO.#: OMO-BFP842ESD-H6327-1190

    		 Neu und Original
    BFP842ESDH6327

    Mfr.#: BFP842ESDH6327

    OMO.#: OMO-BFP842ESDH6327-INFINEON-TECHNOLOGIES

    		 Infineon Ultra Low-Noise SiGe:C Transistor BFP842ESD - SOT343-4-2
    BFP842ESDH6327XTSA1

    Mfr.#: BFP842ESDH6327XTSA1

    OMO.#: OMO-BFP842ESDH6327XTSA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors RF BIP TRANSISTORS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von BFP842ESDH6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,20 $
    0,20 $
    10
    0,19 $
    1,89 $
    100
    0,18 $
    17,87 $
    500
    0,17 $
    84,40 $
    1000
    0,16 $
    158,90 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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