SI7459DP-T1-E3

SI7459DP-T1-E3
Mfr. #:
SI7459DP-T1-E3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 30V 22A 5.4W 6.8mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7459DP-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7459DP-T1-E3 DatasheetSI7459DP-T1-E3 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Tags
SI7459DP-T, SI7459, SI745, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 30V 13A 8-Pin PowerPAK SO T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-22000mA; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.0068ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
***nell
MOSFET, P CH, -30V, -13A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Teil # Mfg. Beschreibung Aktie Preis
SI7459DP-T1-E3
DISTI # SI7459DP-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 30V 13A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI7459DP-T1-E3
    DISTI # SI7459DP-T1-E3CT-ND
    Vishay SiliconixMOSFET P-CH 30V 13A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI7459DP-T1-E3
      DISTI # SI7459DP-T1-E3DKR-ND
      Vishay SiliconixMOSFET P-CH 30V 13A PPAK SO-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI7459DP-T1-E3
        DISTI # 781-SI7459DP-T1-E3
        Vishay IntertechnologiesMOSFET 30V 22A 5.4W 6.8mohm @ 10V
        RoHS: Compliant
        0
          SI7459DP-T1-E3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 13A I(D), 30V, 0.0068OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET15
            Bild Teil # Beschreibung
            SI7459DP-T1-GE3

            Mfr.#: SI7459DP-T1-GE3

            OMO.#: OMO-SI7459DP-T1-GE3

            MOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3
            SI7459DP-T1-E3

            Mfr.#: SI7459DP-T1-E3

            OMO.#: OMO-SI7459DP-T1-E3-VISHAY

            IGBT Transistors MOSFET 30V 22A 5.4W 6.8mohm @ 10V
            SI7459DP-T1-GE3

            Mfr.#: SI7459DP-T1-GE3

            OMO.#: OMO-SI7459DP-T1-GE3-VISHAY

            IGBT Transistors MOSFET 30V 22A 5.4W 6.8mohm @ 10V
            SI7459DP

            Mfr.#: SI7459DP

            OMO.#: OMO-SI7459DP-1190

            Neu und Original
            SI7459DP-T1

            Mfr.#: SI7459DP-T1

            OMO.#: OMO-SI7459DP-T1-1190

            Neu und Original
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3000
            Menge eingeben:
            Der aktuelle Preis von SI7459DP-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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