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FDMS037N08B

FDMS037N08B
Mfr. #:
FDMS037N08B
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET PT7 75V 3.7mohm PQFN56
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS037N08B Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
3.7 mOhms
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Serie:
FDMS037N08B
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.002402 oz
Tags
FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 75 V 3.7 mOhm 100 nC 104.2 W PowerTrench SMT Mosfet POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 75V, 100A, 3.7mΩ
***r Electronics
Small Signal Field-Effect Transistor, 19.9A I(D), 75V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 75V, 100A, 104.2W, POWER56; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.00301ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 104.2W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package, MG-WDSON-8, RoHS
***ure Electronics
Single N-Channel 60 V 2.9 mOhm 120 nC HEXFET® Power Mosfet - DirectFET®
***ment14 APAC
MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:60V; On Resistance
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity: N Channel; Continuous Drain Current Id: 114A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 96W; Transistor Case Style: DirectFET ME; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: StrongIRFET, DirectFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, D2-PAK, Pb-Free
***nell
MOSFET, N, 75V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 75V 120A D2PAK
***ical
Trans MOSFET N-CH Si 75V 170A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***nell
MOSFET, N-CH, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***icroelectronics
N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
***ical
Trans MOSFET N-CH 80V 120A 8-Pin Power Flat T/R
***(Formerly Allied Electronics)
MOSFET N-Ch 80V 26A STripFET PowerFLAT8
***et Japan
Trans MOSFET N-CH 80V 123A PowerFlat T/R
*** Electronic Components
MOSFET N-CH 80V 4 mOhm 24A STripFET VII
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 130A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Power MOSFETs, 80V, 120A, PowerFLAT 5x6, Tape and Reel
***ment14 APAC
MOSFET, N-CH, 80V, 120A, 175DEG C, 135W;
***ronik
N-CH 80V 130A 3,6mOhm PFLAT5x6
***ark
MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
***emi
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ
***ure Electronics
Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***nell
MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
*** Electronics
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin Power 56 ON Semiconductor FDMS030N06B
***ure Electronics
Single N-Channel 60 V 3 mOhm 75 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 22.1A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Teil # Mfg. Beschreibung Aktie Preis
FDMS037N08B
DISTI # V72:2272_06338157		ON SemiconductorTrans MOSFET N-CH Si 75V 19.9A 8-Pin Power 56 T/R4238
  • 3000:$0.9424
  • 1000:$1.0156
  • 500:$1.2344
  • 250:$1.2683
  • 100:$1.4092
  • 25:$1.7563
  • 10:$1.7751
  • 1:$2.0810
FDMS037N08B
DISTI # FDMS037N08BTR-ND		ON SemiconductorMOSFET N-CH 75V 100A 8QFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.1587
FDMS037N08B
DISTI # FDMS037N08BCT-ND		ON SemiconductorMOSFET N-CH 75V 100A 8QFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.2785
  • 500:$1.5334
  • 100:$1.9583
  • 10:$2.4250
  • 1:$2.6800
FDMS037N08B
DISTI # FDMS037N08BDKR-ND		ON SemiconductorMOSFET N-CH 75V 100A 8QFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.2785
  • 500:$1.5334
  • 100:$1.9583
  • 10:$2.4250
  • 1:$2.6800
FDMS037N08B
DISTI # 30331036		ON SemiconductorTrans MOSFET N-CH Si 75V 19.9A 8-Pin Power 56 T/R4238
  • 3000:$0.9424
  • 1000:$1.0156
  • 500:$1.2344
  • 250:$1.2683
  • 100:$1.4092
  • 25:$1.7563
  • 10:$1.7751
  • 7:$2.0810
FDMS037N08B
DISTI # FDMS037N08B		ON SemiconductorTrans MOSFET N-CH 75V 19.9A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS037N08B)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9799
  • 6000:$0.9739
  • 12000:$0.9609
  • 18000:$0.9489
  • 30000:$0.9249
FDMS037N08B
DISTI # FDMS037N08B		ON SemiconductorTrans MOSFET N-CH 75V 19.9A 8-Pin Power 56 T/R (Alt: FDMS037N08B)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.3039
  • 6000:€1.0869
  • 12000:€1.0029
  • 18000:€0.9309
  • 30000:€0.8689
FDMS037N08B
DISTI # 512-FDMS037N08B		ON SemiconductorMOSFET PT7 75V 3.7mohm PQFN56
RoHS: Compliant		726
  • 1:$2.2100
  • 10:$1.8800
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0900
  • 3000:$1.0200
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OMO.#: OMO-1-770875-1

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Mfr.#: 90130-1120

OMO.#: OMO-90130-1120-410

 Headers & Wire Housings 2 X 10 SHROUDED HDR
1-770875-1

Mfr.#: 1-770875-1

OMO.#: OMO-1-770875-1-TE-CONNECTIVITY

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OMO.#: OMO-SCD30-SENSIRION

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von FDMS037N08B dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,20 $
2,20 $
10
1,87 $
18,70 $
100
1,50 $
150,00 $
500
1,31 $
655,00 $
1000
1,08 $
1 080,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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