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IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1
Mfr. #:
IPSA70R600P7SAKMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET CONSUMER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPSA70R600P7SAKMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
PG-TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
700 V
Id - Kontinuierlicher Drainstrom:
8.5 A
Rds On - Drain-Source-Widerstand:
490 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
10.5 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
43.1 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
23 ns
Produktart:
MOSFET
Anstiegszeit:
5.5 ns
Werkspackungsmenge:
1500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
63 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
IPSA70R600P7S SP001664806
Tags
IPSA70R6, IPSA7, IPSA, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 8.5A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 8.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
Teil # Mfg. Beschreibung Aktie Preis
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1-ND		Infineon Technologies AGMOSFET COOLMOS 700V TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1835In Stock
  • 6000:$0.3050
  • 3000:$0.3276
  • 1500:$0.3615
  • 100:$0.5717
  • 25:$0.7004
  • 10:$0.7460
  • 1:$0.8500
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1		Infineon Technologies AGCONSUMER - Rail/Tube (Alt: IPSA70R600P7SAKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 3000
  • 15000:$0.2649
  • 7500:$0.2719
  • 4500:$0.2789
  • 3000:$0.2859
  • 1500:$0.2939
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1		Infineon Technologies AGCONSUMER - Bulk (Alt: IPSA70R600P7SAKMA1)
Min Qty: 1250
Container: Bulk		Americas - 0
    IPSA70R600P7SAKMA1
    DISTI # 49AC8010    		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes480
    • 1000:$0.3480
    • 500:$0.3920
    • 100:$0.4350
    • 10:$0.6750
    • 1:$0.8080
    IPSA70R600P7SAKMA1
    DISTI # 726-IPSA70R600P7SAKM    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		1987
    • 1:$0.8000
    • 10:$0.6680
    • 100:$0.4310
    • 1000:$0.3450
    IPSA70R600P7SAKMA1Infineon Technologies AG 
    RoHS: Not Compliant    		1500
    • 1000:$0.2600
    • 500:$0.2800
    • 100:$0.2900
    • 25:$0.3000
    • 1:$0.3200
    IPSA70R600P7SAKMA1
    DISTI # 2843153    		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251
    RoHS: Compliant    		480
    • 6000:$0.4600
    • 3000:$0.4940
    • 1500:$0.5450
    • 100:$0.8620
    • 25:$1.0600
    • 5:$1.1300
    IPSA70R600P7SAKMA1
    DISTI # 2843153    		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251480
    • 500:£0.2850
    • 250:£0.3070
    • 100:£0.3290
    • 10:£0.5590
    • 1:£0.6990
    Bild Teil # Beschreibung
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    Mfr.#: MJD31CT4G

    OMO.#: OMO-MJD31CT4G

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    STGD4M65DF2

    Mfr.#: STGD4M65DF2

    OMO.#: OMO-STGD4M65DF2-STMICROELECTRONICS

    		 TRENCH GATE FIELD-STOP IGBT, M S
    STGF4M65DF2

    Mfr.#: STGF4M65DF2

    OMO.#: OMO-STGF4M65DF2-STMICROELECTRONICS

    		 TRENCH GATE FIELD-STOP IGBT, M S
    MJD31CT4G

    Mfr.#: MJD31CT4G

    OMO.#: OMO-MJD31CT4G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT 3A 100V 15W NPN
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von IPSA70R600P7SAKMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,80 $
    0,80 $
    10
    0,67 $
    6,68 $
    100
    0,43 $
    43,10 $
    1000
    0,34 $
    345,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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