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IRLU3717PBF

IRLU3717PBF
Mfr. #:
IRLU3717PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 20V 120A 21nC 4.2mOhm Qg log lvl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLU3717PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU3717PBF DatasheetIRLU3717PBF Datasheet (P4-P6)IRLU3717PBF Datasheet (P7-P9)IRLU3717PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
5.7 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
21 nC
Pd - Verlustleistung:
89 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001573078
Gewichtseinheit:
0.139332 oz
Tags
IRLU371, IRLU37, IRLU3, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 20V, 120A, 4.2 MOHM, 21 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:120A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 20V, 120A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:89W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:120A; Junction to Case Thermal Resistance A:1.69°C/W; On State resistance @ Vgs = 10V:4.2mohm; Package / Case:IPAK; Power Dissipation Pd:89W; Power Dissipation Pd:89W; Pulse Current Idm:460A; Termination Type:Through Hole; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.45V
***emi
Power MOSFET 25 V, 124 A, Single N-Channel
***r Electronics
Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 15.7A/128A IPAK
***emi
Power MOSFET 25 V, 124 A, Single N-Channel
***r Electronics
Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 15.7A/128A IPAK
***i-Key
MOSFET N-CH 20V 35A I-PAK
***ser
MOSFETs 20V,35A,5.5 OHM, NCH, IPAK, PO
***ark
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:35A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
***emi
Power MOSFET 24V 85A 5.2 mOhm Single N-Channel DPAK
***et
Trans MOSFET N-CH 24V 17A 3-Pin(3+Tab) IPAK Rail
***ser
MOSFETs- Power and Small Signal 24V 85A N-Channel
***r Electronics
Power Field-Effect Transistor, 85A I(D), 24V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:85A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:78.1W ;RoHS Compliant: Yes
***ter Electronics
25V,35A,4.0 OHM, NCH, IPAK, POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 25V 35A I-PAK
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs LOW_VOLTAGE
***et
MOSFET LOW VOLTAGE
***el Nordic
Contact for details
***(Formerly Allied Electronics)
MOSFET, 20V, 49A, 11 MOHM, 7.2 NC QG, LOGIC LEVEL, I-PAK
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
*** Electronic Components
IGBT Transistors MOSFET MOSFT 20V 49A 11mOhm 7.2nC Qg log lvl
***et Europe
Trans MOSFET N-CH 20V 49A 3-Pin(3+Tab) IPAK
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, N, 20V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:20V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:40mW; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Package / Case:IPAK; Power Dissipation Pd:40mW; Pulse Current Idm:200A; SMD Marking:40; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:10ns; Turn On Time:7.8ns; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRLU3717PBF
DISTI # IRLU3717PBF-ND		Infineon Technologies AGMOSFET N-CH 20V 120A I-PAK
RoHS: Compliant
Min Qty: 525
Container: Tube		Limited Supply - Call
    IRLU3717PBF
    DISTI # 70017975    		Infineon Technologies AGMOSFET,N Ch.,20V,120A,4.2 MOHM,21 NC QG,I-PAK,Pb-Free
    RoHS: Compliant    		0
    • 1:$0.8600
    IRLU3717PBF
    DISTI # 942-IRLU3717PBF    		Infineon Technologies AGMOSFET MOSFT 20V 120A 21nC 4.2mOhm Qg log lvl
    RoHS: Compliant    		0
      IRLU3717PBFInternational Rectifier 360
        IRLU3717PBFInternational Rectifier 
        RoHS: Compliant        		Europe - 1050
          IRLU3717PBF
          DISTI # 8660310          		Infineon Technologies AGMOSFET, N, 20V, 120A, I-PAK
          RoHS: Compliant          		0
          • 10000:$1.0300
          • 5000:$1.1000
          • 2500:$1.1400
          • 1000:$1.2300
          • 500:$1.3800
          • 100:$1.5500
          • 10:$1.9100
          • 1:$2.3200
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von IRLU3717PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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