2N7002DWH6327XTSA1

2N7002DWH6327XTSA1
Mfr. #:
2N7002DWH6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 2N-CH 60V 0.3A SOT363
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N7002DWH6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Arrays
Serie
OptiMOS
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
2N7002DW 2N7002DWH6327XT H6327 SP000917596
Montageart
SMD/SMT
Paket-Koffer
6-VSSOP, SC-88, SOT-363
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
PG-SOT363-6
Aufbau
Dual
FET-Typ
2 N-Channel (Dual)
Leistung max
500mW
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
60V
Eingangskapazität-Ciss-Vds
20pF @ 25V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
300mA
Rds-On-Max-Id-Vgs
3 Ohm @ 500mA, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Lade-Qg-Vgs
0.6nC @ 10V
Pd-Verlustleistung
500 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
3.1 ns
Anstiegszeit
3.3 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
300 mA 300 mA
Vds-Drain-Source-Breakdown-Voltage
60 V 60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.1 V
Rds-On-Drain-Source-Widerstand
3 Ohms 3 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
5.5 ns
Typische-Einschaltverzögerungszeit
3 ns
Qg-Gate-Ladung
400 pC
Vorwärts-Transkonduktanz-Min
11 S
Kanal-Modus
Erweiterung
Tags
2N7002DWH6, 2N7002DWH, 2N7002DW, 2N7002D, 2N7002, 2N700, 2N70, 2N7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** electronic
Transistor MOSFET N-Ch. 60V/0,3A 4R PG-SOT363
***ure Electronics
Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS™ Small Signal Mosfet - SOT-363
***ment14 APAC
N CH MOSFET, 60V, 115mA, SOT-363; Transi; N CH MOSFET, 60V, 115mA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:115mA; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:1.6ohm; Rds(on) Test Voltage Vgs:5V
***th Star Micro
N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Teil # Mfg. Beschreibung Aktie Preis
2N7002DWH6327XTSA1
DISTI # 31082059
Infineon Technologies AGTrans MOSFET N-CH 60V 0.3A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant
15000
  • 1000:$0.0644
  • 500:$0.0728
  • 238:$0.0835
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1CT-ND
Infineon Technologies AGMOSFET 2N-CH 60V 0.3A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6244In Stock
  • 1000:$0.0911
  • 500:$0.1168
  • 100:$0.2016
  • 10:$0.3370
  • 1:$0.4700
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1DKR-ND
Infineon Technologies AGMOSFET 2N-CH 60V 0.3A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6244In Stock
  • 1000:$0.0911
  • 500:$0.1168
  • 100:$0.2016
  • 10:$0.3370
  • 1:$0.4700
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1TR-ND
Infineon Technologies AGMOSFET 2N-CH 60V 0.3A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$0.0777
2N7002DWH6327XTSA1
DISTI # C1S322000221125
Infineon Technologies AGTrans MOSFET N-CH 60V 0.3A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant
15000
  • 2000:$0.0467
  • 1000:$0.0501
  • 500:$0.0625
  • 200:$0.1470
  • 100:$0.1800
  • 50:$0.3590
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1
Infineon Technologies AGTrans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R - Tape and Reel (Alt: 2N7002DWH6327XTSA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.0375
  • 6000:$0.0361
  • 12000:$0.0348
  • 18000:$0.0336
  • 30000:$0.0330
2N7002DWH6327XTSA1
DISTI # SP000917596
Infineon Technologies AGTrans MOSFET N-CH 60V 0.3A 6-Pin SOT-363 T/R (Alt: SP000917596)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.0515
  • 6000:€0.0513
  • 12000:€0.0512
  • 18000:€0.0511
  • 30000:€0.0510
2N7002DWH6327XTSA1
DISTI # 47Y8194
Infineon Technologies AGMOSFET, DUAL N CH, 60V, 0.3A, SOT-363-6,No. of Pins:6,SVHC:No SVHC (17-Dec-2014),Approval Category:AEC-Q101,Continuous Drain Current Id:300mA,Drain Source Voltage Vds:60V,MSL:MSL 1 - Unlimited,On Resistance Rds(on):1.6ohm,, RoHS Compliant: Yes100
  • 1:$0.4070
  • 10:$0.2590
  • 25:$0.2090
  • 50:$0.1610
  • 100:$0.1110
  • 250:$0.1020
  • 500:$0.0950
  • 1000:$0.0860
2N7002DWH6327XTSA1
DISTI # 726-2N7002DWH6327XTS
Infineon Technologies AGMOSFET N-Ch 60V 300mA SOT-363-6
RoHS: Compliant
36
  • 1:$0.3700
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
2N7002DW H6327
DISTI # 726-2N7002DWH6327
Infineon Technologies AGMOSFET N-Ch 60V 300mA SOT-363-6
RoHS: Compliant
0
  • 1:$0.3700
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
2N7002DWH6327XT
DISTI # 726-2N7002DWH6327SA1
Infineon Technologies AGMOSFET N-Ch 60V 300mA SOT-363-6
RoHS: Compliant
0
  • 1:$0.3700
  • 10:$0.2350
  • 100:$0.1010
  • 1000:$0.0780
  • 3000:$0.0590
2N7002DWH6327XTSA1
DISTI # 2N7002DWH6327XTSA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,0.3A,0.5W,PG-SOT-3632895
  • 25:$0.0519
  • 100:$0.0439
  • 250:$0.0347
  • 1000:$0.0323
  • 3000:$0.0310
2N7002DWH6327XTSA1
DISTI # 2443473
Infineon Technologies AGMOSFET, DUAL N CH, 60V, 0.3A, SOT-363-6
RoHS: Compliant
0
  • 5:£0.1970
  • 25:£0.1910
  • 100:£0.0843
  • 250:£0.0785
  • 500:£0.0601
2N7002DWH6327XTSA1
DISTI # 2443473
Infineon Technologies AGMOSFET, DUAL N CH, 60V, 0.3A, SOT-363-6
RoHS: Compliant
0
  • 1:$0.5860
  • 10:$0.3720
  • 100:$0.1600
  • 1000:$0.1240
  • 3000:$0.0940
  • 9000:$0.0820
  • 24000:$0.0780
  • 45000:$0.0700
Bild Teil # Beschreibung
2N7002DWH6327XTSA1

Mfr.#: 2N7002DWH6327XTSA1

OMO.#: OMO-2N7002DWH6327XTSA1

MOSFET N-Ch 60V 300mA SOT-363-6
2N7002DWH6327XT

Mfr.#: 2N7002DWH6327XT

OMO.#: OMO-2N7002DWH6327XT

MOSFET N-Ch 60V 300mA SOT-363-6
2N7002DWH

Mfr.#: 2N7002DWH

OMO.#: OMO-2N7002DWH-1190

Neu und Original
2N7002DWH6327

Mfr.#: 2N7002DWH6327

OMO.#: OMO-2N7002DWH6327-1190

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
2N7002DWH6327XTSA1

Mfr.#: 2N7002DWH6327XTSA1

OMO.#: OMO-2N7002DWH6327XTSA1-INFINEON-TECHNOLOGIES

MOSFET 2N-CH 60V 0.3A SOT363
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von 2N7002DWH6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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ext. Preis
1
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10
0,04 $
0,44 $
100
0,04 $
4,21 $
500
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19,90 $
1000
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37,40 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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