FJA4213RTU

FJA4213RTU
Mfr. #:
FJA4213RTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJA4213RTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3P-3
Polarität des Transistors:
PNP
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
- 230 V
Kollektor- Basisspannung VCBO:
- 230 V
Emitter- Basisspannung VEBO:
- 5 V
Kollektor-Emitter-Sättigungsspannung:
- 0.4 V
Maximaler DC-Kollektorstrom:
15 A
Bandbreitenprodukt fT gewinnen:
30 MHz
Minimale Betriebstemperatur:
- 50 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FJA4213
DC-Stromverstärkung hFE Max:
160
Höhe:
18.9 mm
Länge:
15.8 mm
Verpackung:
Rohr
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
- 15 A
DC-Kollektor/Basisverstärkung hfe Min:
55
Pd - Verlustleistung:
130 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
450
Unterkategorie:
Transistoren
Teil # Aliase:
FJA4213RTU_NL
Gewichtseinheit:
0.225789 oz
Tags
FJA4213, FJA42, FJA4, FJA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***Yang
Trans GP BJT PNP 250V 17A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube
***emi
PNP Epitaxial Silicon Transistor
***enic
5Ã×A 250V 130W 17A 55@1A5V 30MHz 400mV@8A800mA PNP -50¡Í~+150¡Í@(Tj) TO-3 Bipolar Transistors - BJT ROHS
***or
POWER BIPOLAR TRANSISTOR, 17A, 2
***ark
130W Audio Amp. Tr Rohs Compliant: Yes
***r Electronics
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***Yang
Trans GP BJT PNP 250V 17A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube
***ark
BIPOLAR TRANSISTOR, PNP, -250V; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-250V; Transition Frequency Typ, ft:30MHz; Power Dissipation, Pd:130W; DC Collector Current:-17A; DC Current Gain Max (hfe):60 ;RoHS Compliant: Yes
***r Electronics
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***Yang
Trans GP BJT PNP 250V 17A 3-Pin(3+Tab) TO-3P Tube - Rail/Tube
***emi
PNP Epitaxial Silicon Transistor
***or
POWER BIPOLAR TRANSISTOR, 17A, 2
***r Electronics
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***ow.cn
Trans GP BJT PNP 250V 17A 130000mW 3-Pin(3+Tab) TO-3P Tube
***nell
TRANS, PNP, -250V, -17A, 150DEG C, 130W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -250V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 130W; DC Collector Current: -17A; DC Current Gain hFE: 80hFE;
***ark
TRANS, PNP, -250V, -17A, 150DEG C, 130W; Transistor Polarity:PNP; Collector Emitter Voltage Max:250V; Continuous Collector Current:17A; Power Dissipation:130W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***et
Bipolar (BJT) Transistor PNP 230V 15A 30MHz 50W Through Hole TO-220F
***ical
Trans GP BJT PNP 230V 15A 3-Pin (3+Tab) TO-220F Tube
***el Electronic
IC PWR SWITCH N-CHAN 1:1 5SSOP
***p One Stop Global
Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL
***ark
Transistor, Pnp, 230V, 15, To-3P Rohs Compliant: Yes
*** Americas
TOSHIBA Transistor Silicon PNP Epitaxial Type
***enic
5Ã×A 230V 150W 15A 80@1A5V 30MHz 3V@8A800mA PNP +150¡Í@(Tj) 2-21F1A-3 Bipolar Transistors - BJT ROHS
***nsix Microsemi
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon
***ical
Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Magazine
***i-Key
TRANS PNP 230V 15A TO3P
***
PWR TRANSISTOR TO-3PL
Teil # Mfg. Beschreibung Aktie Preis
FJA4213RTU
DISTI # V99:2348_06359149
ON SemiconductorPNP EPITAXIAL SILICON TRANSIST450
  • 5000:$1.0391
  • 2500:$1.0621
  • 1000:$1.1443
  • 500:$1.3504
  • 100:$1.5220
  • 10:$1.8377
  • 1:$2.1135
FJA4213RTU
DISTI # FJA4213RTU-ND
ON SemiconductorTRANS PNP 250V 17A TO-3PN
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$1.7709
FJA4213RTU
DISTI # 26733883
ON SemiconductorPNP EPITAXIAL SILICON TRANSIST900
  • 1000:$1.0701
  • 500:$1.2580
  • 450:$1.4365
FJA4213RTU
DISTI # 29068099
ON SemiconductorPNP EPITAXIAL SILICON TRANSIST450
  • 100:$1.5194
  • 10:$1.8342
  • 6:$2.1089
FJA4213RTU
DISTI # FJA4213RTU
ON SemiconductorTrans GP BJT PNP 250V 17A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FJA4213RTU)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.1019
  • 900:$1.0949
  • 1800:$1.0809
  • 2700:$1.0669
  • 4500:$1.0409
FJA4213RTU
DISTI # 84H4618
ON Semiconductor130W AUDIO AMP. TR ROHS COMPLIANT: YES0
  • 1:$2.6900
  • 10:$2.1800
  • 100:$1.7700
  • 500:$1.5600
  • 1000:$1.3100
  • 2500:$1.2100
  • 10000:$1.1500
FJA4213RTU
DISTI # 512-FJA4213RTU
ON SemiconductorBipolar Transistors - BJT PNP Epitaxial Silicon Transistor
RoHS: Compliant
408
  • 1:$2.4900
  • 10:$2.1100
  • 100:$1.6900
  • 500:$1.4800
  • 1000:$1.2300
FJA4213RTU
DISTI # C1S541901397564
ON SemiconductorTrans GP BJT PNP 250V 17A 130000mW 3-Pin(3+Tab) TO-3PN Tube
RoHS: Compliant
450
  • 100:$1.5194
  • 10:$1.8342
  • 1:$2.1089
Bild Teil # Beschreibung
IRS2092STRPBF

Mfr.#: IRS2092STRPBF

OMO.#: OMO-IRS2092STRPBF

Audio Amplifiers 200V Dig Aud Drvr
FJA4313OTU

Mfr.#: FJA4313OTU

OMO.#: OMO-FJA4313OTU

Bipolar Transistors - BJT NPN Epitaxial Sil
ES1D

Mfr.#: ES1D

OMO.#: OMO-ES1D

Rectifiers 1.0a Rectifier UF Recovery
FJA4313RTU

Mfr.#: FJA4313RTU

OMO.#: OMO-FJA4313RTU

Bipolar Transistors - BJT NPN Epitaxial Silicon Transistor
10103592-0001LF

Mfr.#: 10103592-0001LF

OMO.#: OMO-10103592-0001LF

USB Connectors 5P Quick Connect Micro USB TypeB Plug
CP41B-AFS-CN0Q0354

Mfr.#: CP41B-AFS-CN0Q0354

OMO.#: OMO-CP41B-AFS-CN0Q0354

Standard LEDs - Through Hole Amber LED
CP41B-AHS-CN0Q0354

Mfr.#: CP41B-AHS-CN0Q0354

OMO.#: OMO-CP41B-AHS-CN0Q0354

Standard LEDs - Through Hole Amber LED
G5V-2-DC12

Mfr.#: G5V-2-DC12

OMO.#: OMO-G5V-2-DC12-OMRON

Low Signal Relays - PCB ThruHole Sealed DPDT 12VDC 500mW
CP41B-AHS-CN0Q0354

Mfr.#: CP41B-AHS-CN0Q0354

OMO.#: OMO-CP41B-AHS-CN0Q0354-CREE

Standard LEDs - Through Hole Amber LED
CP41B-AFS-CN0Q0354

Mfr.#: CP41B-AFS-CN0Q0354

OMO.#: OMO-CP41B-AFS-CN0Q0354-CREE

Standard LEDs - Through Hole Amber LED
Verfügbarkeit
Aktie:
357
Auf Bestellung:
2340
Menge eingeben:
Der aktuelle Preis von FJA4213RTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,49 $
2,49 $
10
2,11 $
21,10 $
100
1,69 $
169,00 $
500
1,48 $
740,00 $
1000
1,23 $
1 230,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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