AUIRFZ34N

AUIRFZ34N
Mfr. #:
AUIRFZ34N
Hersteller:
Infineon / IR
Beschreibung:
MOSFET AUTO 55V 1 N-CH HEXFET 40mOhms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AUIRFZ34N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AUIRFZ34N DatasheetAUIRFZ34N Datasheet (P4-P6)AUIRFZ34N Datasheet (P7-P9)AUIRFZ34N Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
26 A
Rds On - Drain-Source-Widerstand:
40 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
22.7 nC
Minimale Betriebstemperatur:
- 55 C
Pd - Verlustleistung:
68 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon / IR
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
49 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
31 ns
Typische Einschaltverzögerungszeit:
7 ns
Teil # Aliase:
SP001521138
Gewichtseinheit:
0.211644 oz
Tags
AUIRFZ, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
AUIRFZ34N
DISTI # 27542854
Infineon Technologies AGTrans MOSFET N-CH Si 55V 29A Automotive 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
2000
  • 1000:$0.6912
AUIRFZ34N
DISTI # AUIRFZ34N-ND
Infineon Technologies AGMOSFET N-CH 55V 29A TO-220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
  • 1000:$0.8347
AUIRFZ34N
DISTI # C1S322000583210
Infineon Technologies AGTrans MOSFET N-CH Si 55V 29A Automotive 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
2000
  • 2000:$0.8190
  • 1000:$0.8830
AUIRFZ34N
DISTI # SP001521138
Infineon Technologies AGTrans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001521138)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 1850
  • 1:€1.0979
  • 10:€0.9759
  • 25:€0.8779
  • 50:€0.7979
  • 100:€0.7319
  • 500:€0.6749
  • 1000:€0.6269
AUIRFZ34N
DISTI # AUIRFZ34N
Infineon Technologies AGTrans MOSFET N-CH 55V 29A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: AUIRFZ34N)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.7539
  • 2000:$0.7259
  • 4000:$0.6999
  • 6000:$0.6759
  • 10000:$0.6639
AUIRFZ34N
DISTI # 70411579
Infineon Technologies AGAUIRFZ34N N-channel MOSFET Transistor,29 A,55 V,3-Pin TO-220AB
RoHS: Compliant
0
  • 5:$1.0710
AUIRFZ34N
DISTI # 942-AUIRFZ34N
Infineon Technologies AGMOSFET AUTO 55V 1 N-CH HEXFET 40mOhms
RoHS: Compliant
155
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9130
  • 1000:$0.7200
AUIRFZ34NInternational RectifierPower Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
1130
  • 1000:$0.7100
  • 500:$0.7400
  • 100:$0.7700
  • 25:$0.8100
  • 1:$0.8700
AUIRFZ34N
DISTI # 7481875
Infineon Technologies AGMOSFET N-CHANNEL 55V 29A TO220AB, PK110
  • 5:£1.2700
  • 25:£1.0200
  • 100:£0.7800
  • 250:£0.7340
  • 500:£0.6840
AUIRFZ34N
DISTI # 7481875P
Infineon Technologies AGMOSFET N-CHANNEL 55V 29A TO220AB, TU190
  • 25:£1.0200
  • 100:£0.7800
  • 250:£0.7340
  • 500:£0.6840
AUIRFZ34N
DISTI # AUIRFZ34N
Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,26A,68W,TO220AB146
  • 1:$1.2958
  • 3:$1.0491
  • 10:$0.8411
  • 50:$0.7832
AUIRFZ34N
DISTI # 2062092
Infineon Technologies AGMOSFET, N CH, 55V, 29A, TO-220AB
RoHS: Compliant
0
  • 1:$2.5000
  • 10:$2.1400
  • 100:$1.6500
  • 500:$1.4500
  • 1000:$1.1500
Bild Teil # Beschreibung
LM2904WHYDT

Mfr.#: LM2904WHYDT

OMO.#: OMO-LM2904WHYDT

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Mfr.#: CAV93C56VE-GT3

OMO.#: OMO-CAV93C56VE-GT3

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1N4148

Mfr.#: 1N4148

OMO.#: OMO-1N4148

Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
SN74HC04N

Mfr.#: SN74HC04N

OMO.#: OMO-SN74HC04N

Inverters Hex
PIC10F322T-E/OT

Mfr.#: PIC10F322T-E/OT

OMO.#: OMO-PIC10F322T-E-OT

8-bit Microcontrollers - MCU 896 B Flash, 64 B RAM, 4 I/O, 8bit ADC, PWM, CLC, NCO, CWG, TEMP Indicator, 2.3V - 5.5V
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Mfr.#: LM2575T-5.0/NOPB

OMO.#: OMO-LM2575T-5-0-NOPB

Switching Voltage Regulators 1A STEP-DOWN VLTG REG
FA22X7R2E474KNU00

Mfr.#: FA22X7R2E474KNU00

OMO.#: OMO-FA22X7R2E474KNU00

Multilayer Ceramic Capacitors MLCC - Leaded 250V 0.47uF X7R 10% RAD LS:5mm AEC-Q200
FA18C0G1H222JNU06

Mfr.#: FA18C0G1H222JNU06

OMO.#: OMO-FA18C0G1H222JNU06

Multilayer Ceramic Capacitors MLCC - Leaded 50V 2200pF C0G 5% RAD LS:2.5mm AECQ200
LM2904WHYDT

Mfr.#: LM2904WHYDT

OMO.#: OMO-LM2904WHYDT-STMICROELECTRONICS

IC OPAMP GP 1.1MHZ 8SO
Verfügbarkeit
Aktie:
105
Auf Bestellung:
2088
Menge eingeben:
Der aktuelle Preis von AUIRFZ34N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,64 $
1,64 $
10
1,39 $
13,90 $
100
1,11 $
111,00 $
500
0,98 $
488,50 $
1000
0,81 $
809,00 $
2000
0,75 $
1 508,00 $
5000
0,73 $
3 630,00 $
10000
0,70 $
6 980,00 $
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