SI3585CDV-T1-GE3

SI3585CDV-T1-GE3
Mfr. #:
SI3585CDV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3585CDV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3585CDV-T1-GE3 DatasheetSI3585CDV-T1-GE3 Datasheet (P4-P6)SI3585CDV-T1-GE3 Datasheet (P7-P9)SI3585CDV-T1-GE3 Datasheet (P10-P12)SI3585CDV-T1-GE3 Datasheet (P13-P15)SI3585CDV-T1-GE3 Datasheet (P16)
ECAD Model:
Mehr Informationen:
SI3585CDV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSOP-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
2.1 A, 3.9 A
Rds On - Drain-Source-Widerstand:
58 mOhms, 195 mOhms
Vgs th - Gate-Source-Schwellenspannung:
600 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
3.2 nC, 6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.3 W, 1.4 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.05 mm
Serie:
SI3
Transistortyp:
1 N-Channel, 1 P-Channel
Breite:
1.65 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
1 S, 12 S
Abfallzeit:
9 ns, 28 ns
Produktart:
MOSFET
Anstiegszeit:
16 ns, 37 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns, 25 ns
Typische Einschaltverzögerungszeit:
15 ns, 16 ns
Teil # Aliase:
SI3585CDV-GE3
Gewichtseinheit:
0.000705 oz
Tags
SI3585CDV-T, SI3585C, SI3585, SI358, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R / MOSFET N/P-CH 20V 3.9A 6TSOP
***ure Electronics
Dual N / P-Channel 20 V 0.058/0.195 O 4.8 nC Surface Mount Power Mosfet - TSOP-
***roFlash
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
***nell
MOSFET, N/P-CH, 20V, 3.9A, TSOP-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Teil # Mfg. Beschreibung Aktie Preis
SI3585CDV-T1-GE3
DISTI # V72:2272_09216703
Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1576
  • 1000:$0.1751
  • 500:$0.2161
  • 250:$0.2476
  • 100:$0.2503
  • 25:$0.3124
  • 10:$0.3163
  • 1:$0.3860
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3CT-ND
Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
12000In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3DKR-ND
Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
12000In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3TR-ND
Vishay SiliconixMOSFET N/P-CH 20V 3.9A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 3000:$0.2046
SI3585CDV-T1-GE3
DISTI # 31154779
Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1576
  • 1000:$0.1751
  • 500:$0.2161
  • 250:$0.2476
  • 100:$0.2503
  • 48:$0.3124
SI3585CDV-T1-GE3
DISTI # SI3585CDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI3585CDV-T1-GE3
    DISTI # SI3585CDV-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.3089
    • 6000:€0.2109
    • 12000:€0.1809
    • 18000:€0.1669
    • 30000:€0.1559
    SI3585CDV-T1-GE3
    DISTI # SI3585CDV-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3585CDV-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.1609
    • 6000:$0.1559
    • 12000:$0.1499
    • 18000:$0.1459
    • 30000:$0.1419
    SI3585CDV-T1-GE3
    DISTI # 70AC6501
    Vishay Intertechnologies 0
    • 1:$0.6500
    • 25:$0.5440
    • 50:$0.4760
    • 100:$0.4070
    • 250:$0.3530
    • 500:$0.2990
    • 1000:$0.2310
    SI3585CDV-T1-GE3
    DISTI # 99W9612
    Vishay IntertechnologiesDual MOSFET, N and P Channel, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V0
    • 1:$0.1760
    • 3000:$0.1740
    • 6000:$0.1660
    SI3585CDV-T1-GE3
    DISTI # 78-SI3585CDV-T1-GE3
    Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant
    378
    • 1:$0.5700
    • 10:$0.4340
    • 100:$0.3220
    • 500:$0.2650
    • 1000:$0.2050
    • 3000:$0.2000
    SI3585CDV-T1-GE3
    DISTI # 2454805RL
    Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant
    0
    • 1:$0.9020
    • 10:$0.6870
    • 100:$0.5100
    • 500:$0.4190
    • 1000:$0.3250
    • 3000:$0.2940
    • 6000:$0.2810
    SI3585CDV-T1-GE3
    DISTI # 2454805
    Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant
    0
    • 1:$0.9020
    • 10:$0.6870
    • 100:$0.5100
    • 500:$0.4190
    • 1000:$0.3250
    • 3000:$0.2940
    • 6000:$0.2810
    SI3585CDV-T1-GE3
    DISTI # 2454805
    Vishay IntertechnologiesMOSFET, N/P-CH, 20V, 3.9A, TSOP-6
    RoHS: Compliant
    0
    • 5:£0.4650
    • 25:£0.4380
    • 100:£0.3050
    SI3585CDV-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
    RoHS: Compliant
    Americas -
    • 3000:$0.1570
    • 6000:$0.1480
    • 12000:$0.1440
    • 24000:$0.1420
    Bild Teil # Beschreibung
    AS179-92LF

    Mfr.#: AS179-92LF

    OMO.#: OMO-AS179-92LF

    RF Switch ICs 802.11b/g IL .3dB IP3=+43dBm typ.
    DAC3282IRGZT

    Mfr.#: DAC3282IRGZT

    OMO.#: OMO-DAC3282IRGZT

    Digital to Analog Converters - DAC Dual 16B 625MSPS Comm DAC
    LP2985A-33DBVR

    Mfr.#: LP2985A-33DBVR

    OMO.#: OMO-LP2985A-33DBVR

    LDO Voltage Regulators 150-mA 1% Tolerance Low-Noise LDO
    RCL12253R00FKEG

    Mfr.#: RCL12253R00FKEG

    OMO.#: OMO-RCL12253R00FKEG

    Thick Film Resistors - SMD 2watt 3ohm 1% 100ppm 1225
    LM1117MPX-3.3/NOPB

    Mfr.#: LM1117MPX-3.3/NOPB

    OMO.#: OMO-LM1117MPX-3-3-NOPB-TEXAS-INSTRUMENTS

    LDO Voltage Regulators 800MA LDO LINEAR REG
    LP2985A-33DBVR

    Mfr.#: LP2985A-33DBVR

    OMO.#: OMO-LP2985A-33DBVR-TEXAS-INSTRUMENTS

    LDO Voltage Regulators 150-mA 1% Tolerance Low-Noise LDO
    AS179-92LF

    Mfr.#: AS179-92LF

    OMO.#: OMO-AS179-92LF-SKYWORKS-SOLUTIONS-INC

    IC RF SWITCH SPDT 3GHZ SC70-6
    DAC3282IRGZT

    Mfr.#: DAC3282IRGZT

    OMO.#: OMO-DAC3282IRGZT-TEXAS-INSTRUMENTS

    Digital to Analog Converters - DAC Dual 16B 625MSPS Comm DAC
    TMP75AIDGKR

    Mfr.#: TMP75AIDGKR

    OMO.#: OMO-TMP75AIDGKR-TEXAS-INSTRUMENTS

    Board Mount Temperature Sensors Digital w/2-Wire Ifc
    RCL12253R00FKEG

    Mfr.#: RCL12253R00FKEG

    OMO.#: OMO-RCL12253R00FKEG-VISHAY-DALE

    Thick Film Resistors - SMD 2watt 3ohm 1% 100ppm 1225
    Verfügbarkeit
    Aktie:
    21
    Auf Bestellung:
    2004
    Menge eingeben:
    Der aktuelle Preis von SI3585CDV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,56 $
    0,56 $
    10
    0,43 $
    4,33 $
    100
    0,32 $
    32,10 $
    500
    0,26 $
    132,00 $
    1000
    0,20 $
    204,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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