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STGP30H60DFB

STGP30H60DFB
Mfr. #:
STGP30H60DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGP30H60DFB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGP30H60DFB Mehr Informationen STGP30H60DFB Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.55 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
60 A
Pd - Verlustleistung:
260 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGP30H60DFB
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Tags
STGP30H60, STGP30H, STGP30, STGP3, STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
HB Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220
***i-Key
TRENCH GATE FIELD-STOP IGBT, HB
***ark
Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:260W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-220; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
IGBT, SINGOLO, 600V, 60A, TO-220; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.55V; Dissipazione di Potenza Pd:260W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
HB Series Trench Gate Field-Stop IGBTs
STMicroelectronics HB Series Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These new HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.Learn More
Teil # Mfg. Beschreibung Aktie Preis
STGP30H60DFB
DISTI # V99:2348_17621555		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220AB Tube1000
  • 2000:$1.1969
  • 1000:$1.2463
  • 500:$1.5187
  • 100:$1.7570
  • 10:$2.2134
  • 1:$2.8796
STGP30H60DFB
DISTI # V36:1790_16116206		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220AB Tube0
  • 1000000:$1.0780
  • 500000:$1.0820
  • 100000:$1.5550
  • 10000:$2.4800
  • 1000:$2.6400
STGP30H60DFB
DISTI # 497-16483-5-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, HB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 5000:$1.2285
  • 2500:$1.2757
  • 500:$1.6538
  • 100:$2.0129
  • 50:$2.3626
  • 10:$2.5040
  • 1:$2.7900
STGP30H60DFB
DISTI # 33609361		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-220AB Tube1000
  • 2000:$1.1969
  • 1000:$1.2463
  • 500:$1.5187
  • 100:$1.7570
  • 10:$2.2134
  • 6:$2.8796
STGP30H60DFB
DISTI # STGP30H60DFB		STMicroelectronicsIGBTs (Alt: STGP30H60DFB)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€1.0599
  • 300:€1.1359
  • 200:€1.2229
  • 100:€1.3249
  • 50:€1.5909
STGP30H60DFB
DISTI # 61AC2096		STMicroelectronicsIGBT, SINGLE, 600V, 60A, TO-220,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:260W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-220,No. of Pins:3Pins,RoHS Compliant: Yes1000
  • 5000:$1.1800
  • 2500:$1.2200
  • 1000:$1.3100
  • 500:$1.5900
  • 100:$1.8200
  • 10:$2.2700
  • 1:$2.6700
STGP30H60DFB
DISTI # 511-STGP30H60DFB		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
RoHS: Compliant		2
  • 1:$2.6400
  • 10:$2.2500
  • 100:$1.8000
  • 500:$1.5700
  • 1000:$1.3000
  • 2000:$1.2100
  • 5000:$1.1700
STGP30H60DFBSTMicroelectronicsHB Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220
RoHS: Compliant		920Tube
  • 10:$2.0800
  • 50:$1.6000
  • 100:$1.5300
  • 250:$1.4400
  • 500:$1.3700
STGP30H60DFBSTMicroelectronicsInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant		1000
    STGP30H60DFB
    DISTI # 2889922    		STMicroelectronicsIGBT, SINGLE, 600V, 60A, TO-220992
    • 100:£1.6300
    • 10:£2.0400
    • 1:£2.7100
    STGP30H60DFB
    DISTI # XSFP00000100773    		STMicroelectronics 
    RoHS: Compliant    		497 in Stock0 on Order
    • 497:$2.1300
    • 63:$2.2900
    STGP30H60DFB
    DISTI # 2889922    		STMicroelectronicsIGBT, SINGLE, 600V, 60A, TO-220
    RoHS: Compliant    		1000
    • 100:$3.4100
    • 50:$3.7900
    • 1:$4.6900
    Bild Teil # Beschreibung
    STGP30H60DFB

    Mfr.#: STGP30H60DFB

    OMO.#: OMO-STGP30H60DFB

    		 IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
    STGP30H60DF

    Mfr.#: STGP30H60DF

    OMO.#: OMO-STGP30H60DF

    		 IGBT Transistors 600V 30A High Speed Trench Gate IGBT
    STGP30V60F

    Mfr.#: STGP30V60F

    OMO.#: OMO-STGP30V60F

    		 IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
    STGP30H65F

    Mfr.#: STGP30H65F

    OMO.#: OMO-STGP30H65F

    		 IGBT Transistors Trench gte FieldStop IGBT 600V 30A
    STGP30NC60W

    Mfr.#: STGP30NC60W

    OMO.#: OMO-STGP30NC60W

    		 IGBT Transistors N-channel MOSFET
    STGP30NC60S

    Mfr.#: STGP30NC60S

    OMO.#: OMO-STGP30NC60S

    		 IGBT Transistors 30A 600V FAST IGBT
    STGP30H60DF

    Mfr.#: STGP30H60DF

    OMO.#: OMO-STGP30H60DF-STMICROELECTRONICS

    		 IGBT Transistors 600V 30A High Speed Trench Gate IGBT
    STGP30V60DF

    Mfr.#: STGP30V60DF

    OMO.#: OMO-STGP30V60DF-STMICROELECTRONICS

    		 IGBT Transistors 600V 30A High Speed Trench Gate IGBT
    STGP30NC60K

    Mfr.#: STGP30NC60K

    OMO.#: OMO-STGP30NC60K-STMICROELECTRONICS

    		 IGBT 600V 60A 185W TO220AB
    STGP30H60DF/IXFP22N65X2

    Mfr.#: STGP30H60DF/IXFP22N65X2

    OMO.#: OMO-STGP30H60DF-IXFP22N65X2-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von STGP30H60DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,64 $
    2,64 $
    10
    2,25 $
    22,50 $
    100
    1,80 $
    180,00 $
    500
    1,57 $
    785,00 $
    1000
    1,30 $
    1 300,00 $
    2000
    1,21 $
    2 420,00 $
    5000
    1,17 $
    5 850,00 $
    10000
    1,12 $
    11 200,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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