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SIR640ADP-T1-GE3

SIR640ADP-T1-GE3
Mfr. #:
SIR640ADP-T1-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 40V 2mOhm@10V 60A N-CH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR640ADP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIR640ADP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIR640, SIR64, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR640ADP Series 40 V 60 A 2 mOhm N-Channel Mosfet - PowerPAK® SO-8
***p One Stop Japan
Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP
***et Europe
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 40V 60A PPAK SO-8
***ark
N-CHANNEL 40-V (D-S) MOSFET
***
N-CHANNEL 40-V (D-S)
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET CANALE N 40V, 100A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00165ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:104W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIR640ADP-T1-GE3
DISTI # SIR640ADP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.9207
SIR640ADP-T1-GE3
DISTI # SIR640ADP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0186
  • 500:$1.2293
  • 100:$1.5805
  • 10:$1.9670
  • 1:$2.1800
SIR640ADP-T1-GE3
DISTI # SIR640ADP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0186
  • 500:$1.2293
  • 100:$1.5805
  • 10:$1.9670
  • 1:$2.1800
SIR640ADP-T1-GE3
DISTI # SIR640ADP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR640ADP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.9019
  • 12000:$0.8749
  • 18000:$0.8399
  • 30000:$0.8159
  • 60000:$0.7939
SIR640ADP-T1-GE3
DISTI # 99W9556		Vishay IntertechnologiesN-Ch PowerPAK SO-8 BWL split gate 40V 1.7mohm@10V0
  • 1:$0.9680
  • 6000:$0.7940
SIR640ADP-T1-GE3
DISTI # 01AC4969		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes0
  • 1:$1.8000
  • 10:$1.5200
  • 25:$1.4100
  • 50:$1.3100
  • 100:$1.2000
  • 250:$1.1400
  • 500:$1.0800
SIR640ADP-T1-GE3
DISTI # 78-SIR640ADP-T1-GE3		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		0
  • 1:$1.9300
  • 10:$1.6000
  • 100:$1.2400
  • 500:$1.0900
  • 1000:$0.8990
  • 3000:$0.8380
SIR640ADP-T1-GE3
DISTI # 2679710		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, POWERPAK SO
RoHS: Compliant		0
  • 6000:£0.6210
  • 18000:£0.6090
SIR640ADP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8Americas -
    SIR640ADP-T1-GE3
    DISTI # 2646400    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, POWERPAK SO
    RoHS: Compliant    		0
    • 1:$3.0600
    • 10:$2.5400
    • 100:$1.9700
    • 500:$1.7300
    • 1000:$1.4200
    • 3000:$1.3300
    SIR640ADP-T1-GE3
    DISTI # 2679710    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, POWERPAK SO
    RoHS: Compliant    		0
    • 3000:$1.4700
    Bild Teil # Beschreibung
    SIR640ADP-T1-GE3

    Mfr.#: SIR640ADP-T1-GE3

    OMO.#: OMO-SIR640ADP-T1-GE3

    		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
    SIR640ADP-T1-GE3

    Mfr.#: SIR640ADP-T1-GE3

    OMO.#: OMO-SIR640ADP-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 40V 2mOhm@10V 60A N-CH
    SIR640ADP

    Mfr.#: SIR640ADP

    OMO.#: OMO-SIR640ADP-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SIR640ADP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,19 $
    1,19 $
    10
    1,13 $
    11,31 $
    100
    1,07 $
    107,18 $
    500
    1,01 $
    506,10 $
    1000
    0,95 $
    952,70 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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