BSZ22DN20NS3 G

BSZ22DN20NS3 G
Mfr. #:
BSZ22DN20NS3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ22DN20NS3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSZ22DN20NS3 G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
7 A
Rds On - Drain-Source-Widerstand:
194 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
5.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
34 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.3 mm
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
3.5 S
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
6 ns
Typische Einschaltverzögerungszeit:
4 ns
Teil # Aliase:
BSZ22DN20NS3GATMA1 BSZ22DN2NS3GXT SP000781794
Tags
BSZ22, BSZ2, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Teil # Mfg. Beschreibung Aktie Preis
BSZ22DN20NS3GATMA1
DISTI # V36:1790_06384496
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # V72:2272_06384496
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
664
  • 500:$0.5384
  • 250:$0.5510
  • 100:$0.6122
  • 25:$0.7147
  • 10:$0.8735
  • 1:$1.0134
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 25000:$0.3799
  • 10000:$0.3839
  • 5000:$0.3988
BSZ22DN20NS3GATMA1
DISTI # 33128679
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # 32736050
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.3501
BSZ22DN20NS3 G
DISTI # 32725881
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
RoHS: Compliant
3720
  • 56:$0.4525
BSZ22DN20NS3GATMA1
DISTI # 31984785
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
664
  • 16:$1.0134
BSZ22DN20NS3G
DISTI # BSZ22DN20NS3G
Infineon Technologies AG- Bulk (Alt: BSZ22DN20NS3G)
Min Qty: 962
Container: Bulk
Americas - 0
  • 9620:$0.3679
  • 4810:$0.3749
  • 2886:$0.3879
  • 1924:$0.4019
  • 962:$0.4169
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Bulk (Alt: BSZ22DN20NS3GATMA1)
Min Qty: 962
Container: Bulk
Americas - 0
  • 9620:$0.3299
  • 4810:$0.3359
  • 2886:$0.3479
  • 1924:$0.3609
  • 962:$0.3739
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ22DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.3619
  • 30000:$0.3689
  • 20000:$0.3819
  • 10000:$0.3959
  • 5000:$0.4109
BSZ22DN20NS3GATMA1
DISTI # SP000781794
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP (Alt: SP000781794)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 50000:€0.3329
  • 30000:€0.3579
  • 20000:€0.3879
  • 10000:€0.4229
  • 5000:€0.5179
BSZ22DN20NS3GATMA1
DISTI # 85X4160
Infineon Technologies AGMOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V RoHS Compliant: Yes0
    BSZ22DN20NS3 G
    DISTI # 726-BSZ22DN20NS3G
    Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant
    12720
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GATMA1
    DISTI # 726-BSZ22DN20NS3GATM
    Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant
    218
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GInfineon Technologies AGPower Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    1700
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    BSZ22DN20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    122641
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    BSZ22DN20NS3 G
    DISTI # C1S322000411092
    Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
    RoHS: Compliant
    30
    • 5:$0.3620
    BSZ22DN20NS3GATMA1
    DISTI # 2443374
    Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant
    0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
    BSZ22DN20NS3GATMA1
    DISTI # 2443374RL
    Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant
    0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
    Bild Teil # Beschreibung
    AD8603AUJZ-REEL7

    Mfr.#: AD8603AUJZ-REEL7

    OMO.#: OMO-AD8603AUJZ-REEL7

    Precision Amplifiers MicroPwr RRIO Low Noise Prec SGL CMOS
    ES1D

    Mfr.#: ES1D

    OMO.#: OMO-ES1D

    Rectifiers 1.0a Rectifier UF Recovery
    FDN8601

    Mfr.#: FDN8601

    OMO.#: OMO-FDN8601

    MOSFET 100V N-Channel PowerTrench MOSFET
    IRF7351TRPBF

    Mfr.#: IRF7351TRPBF

    OMO.#: OMO-IRF7351TRPBF

    MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual
    FDS2672

    Mfr.#: FDS2672

    OMO.#: OMO-FDS2672

    MOSFET 200V 3.9A 70mOHMS NCH ULTRAFET
    LTC7149IFE#PBF

    Mfr.#: LTC7149IFE#PBF

    OMO.#: OMO-LTC7149IFE-PBF

    Switching Voltage Regulators 60V, 4A Sync Buck Reg for Inv Outs
    LP2951ACMX-3.3/NOPB

    Mfr.#: LP2951ACMX-3.3/NOPB

    OMO.#: OMO-LP2951ACMX-3-3-NOPB

    LDO Voltage Regulators Adj MicroPwr Vtg Reg
    OMNI-220-18-75-3C

    Mfr.#: OMNI-220-18-75-3C

    OMO.#: OMO-OMNI-220-18-75-3C

    Heat Sinks omniKlip Heatsink for TO-220, 3 Clip, 18mm Wide, 75mm Long, Aluminum, Black Anodized
    AD8603AUJZ-REEL7

    Mfr.#: AD8603AUJZ-REEL7

    OMO.#: OMO-AD8603AUJZ-REEL7-ANALOG-DEVICES-INC-ADI

    Precision Amplifiers MicroPwr RRIO Low Noise Prec SGL CMOS
    FDS2672

    Mfr.#: FDS2672

    OMO.#: OMO-FDS2672-ON-SEMICONDUCTOR

    MOSFET N-CH 200V 3.9A 8-SOIC
    Verfügbarkeit
    Aktie:
    12
    Auf Bestellung:
    1995
    Menge eingeben:
    Der aktuelle Preis von BSZ22DN20NS3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,93 $
    0,93 $
    10
    0,80 $
    8,00 $
    100
    0,62 $
    61,50 $
    500
    0,54 $
    271,50 $
    1000
    0,43 $
    429,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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