BSC123N08NS3GATMA1

Mfr. #:: BSC123N08NS3GATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 80V 55A TDSON-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC123N08NS3GATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: INFINEO

Produktkategorie: FETs - Einzeln

Serie: OptiMOS

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: BSC123N08NS3 BSC123N08NS3GXT G SP000443916

Montageart: SMD/SMT

Handelsname: OptiMOS

Paket-Koffer: 8-PowerTDFN

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: PG-TDSON-8

Aufbau: Single

FET-Typ: MOSFET N-Kanal, Metalloxid

Leistung max: 66W

Transistor-Typ: 1 N-Channel

Drain-zu-Source-Spannung-Vdss: 80V

Eingangskapazität-Ciss-Vds: 1870pF @ 40V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 11A (Ta), 55A (Tc)

Rds-On-Max-Id-Vgs: 12.3 mOhm @ 33A, 10V

Vgs-th-Max-Id: 3.5V @ 33μA

Gate-Lade-Qg-Vgs: 25nC @ 10V

Pd-Verlustleistung: 66 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 4 ns

Anstiegszeit: 18 ns

Vgs-Gate-Source-Spannung: +/- 20 V

ID-Dauer-Drain-Strom: 55 A

Vds-Drain-Source-Breakdown-Voltage: 80 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.8 V

Rds-On-Drain-Source-Widerstand: 12.3 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 19 ns

Typische-Einschaltverzögerungszeit: 12 ns

Qg-Gate-Ladung: 19 nC

Vorwärts-Transkonduktanz-Min: 44 S

Kanal-Modus: Erweiterung

Tags: BSC123N08NS3G, BSC123N08NS, BSC123N0, BSC123, BSC12, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC123N08NS3GATMA1 Beschreibung

***ure Electronics: Single N-Channel 80 V 24 mOhm 25 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 55A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC123N08NS3GATMA1 DISTI # V72:2272_06384483	Infineon Technologies AG	Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R RoHS: Compliant	4438	75000:$0.3715 30000:$0.3735 15000:$0.3755 6000:$0.4207 3000:$0.4693 1000:$0.4742 500:$0.5939 250:$0.6449 100:$0.6523 50:$0.8040 25:$0.8141 10:$0.8459 1:$0.9583
BSC123N08NS3GATMA1 DISTI # BSC123N08NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	150712In Stock	1000:$0.6183 500:$0.7831 100:$1.0098 10:$1.2780 1:$1.4400
BSC123N08NS3GATMA1 DISTI # BSC123N08NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	150712In Stock	1000:$0.6183 500:$0.7831 100:$1.0098 10:$1.2780 1:$1.4400
BSC123N08NS3GATMA1 DISTI # BSC123N08NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 55A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	145000In Stock	5000:$0.5322
BSC123N08NS3GATMA1 DISTI # 31074817	Infineon Technologies AG	Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R RoHS: Compliant	4538	6000:$0.4207 3000:$0.4694 1000:$0.4743 500:$0.5907 250:$0.6450 100:$0.6525 50:$0.8043 25:$0.8142 16:$0.8396
BSC123N08NS3GXT DISTI # BSC123N08NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 45000	5000:$0.4189 10000:$0.4039 20000:$0.3889 30000:$0.3759 50000:$0.3689
BSC123N08NS3GATMA1 DISTI # 60R2515	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 55A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:55A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	5931	1:$1.3200 10:$1.1200 100:$0.8610 500:$0.7610 1000:$0.6010 2500:$0.5570 10000:$0.5130
BSC123N08NS3 G DISTI # 726-BSC123N08NS3G	Infineon Technologies AG	MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 RoHS: Compliant	20321	1:$1.2000 10:$1.0200 100:$0.7830 500:$0.6920 1000:$0.5460
BSC123N08NS3GATMA1 DISTI # 726-BSC123N08NS3GATM	Infineon Technologies AG	MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 RoHS: Compliant	275	1:$1.2000 10:$1.0200 100:$0.7830 500:$0.6920 1000:$0.5460
BSC123N08NS3GATMA1 DISTI # 7545301	Infineon Technologies AG	MOSFET N-CHANNEL 80V 11A OPTIMOS3 TDSON8, PK	870	5:£0.7440 50:£0.4440 250:£0.3960 1250:£0.3500 2500:£0.3440
BSC123N08NS3GATMA1 DISTI # 7545301P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 11A OPTIMOS3 TDSON8, RL	14935	50:£0.4440 250:£0.3960 1250:£0.3500 2500:£0.3440
BSC123N08NS3GATMA1 DISTI # BSC123N08NS3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,80V,55A,66W,PG-TDSON-8	2	1:$0.6309 3:$0.5582 10:$0.4686 100:$0.4114 1000:$0.3703
BSC123N08NS3GATMA1 DISTI # C1S322000210916	Infineon Technologies AG	Trans MOSFET N-CH 80V 11A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4538	100:$0.6523 50:$0.8040 25:$0.8141 10:$0.8459
BSC123N08NS3GATMA1 DISTI # 1775469	Infineon Technologies AG	MOSFET, N CH, 55A, 80V, PG-TDSON-8 RoHS: Compliant	8181	1:$1.9100 10:$1.6200 100:$1.2400 500:$1.1000 1000:$0.8650 5000:$0.7660
BSC123N08NS3GATMA1 DISTI # 1775469	Infineon Technologies AG	MOSFET, N CH, 55A, 80V, PG-TDSON-8 RoHS: Compliant	6471	5:£0.7590 25:£0.4530 100:£0.4290 250:£0.4040 500:£0.3780

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSC123N08NS3 G OMO.#: OMO-BSC123N08NS3-G	MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
	Mfr.#: BSC123N08NS3GATMA1 OMO.#: OMO-BSC123N08NS3GATMA1	MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
	Mfr.#: BSC123N08NS3GXT OMO.#: OMO-BSC123N08NS3GXT-1190	Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1)
	Mfr.#: BSC123N08N OMO.#: OMO-BSC123N08N-1190	Neu und Original
	Mfr.#: BSC123N08NS3 OMO.#: OMO-BSC123N08NS3-1190	Neu und Original
	Mfr.#: BSC123N08NS3 G OMO.#: OMO-BSC123N08NS3-G-1190	Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP
	Mfr.#: BSC123N08NS3G OMO.#: OMO-BSC123N08NS3G-1190	Trans MOSFET N-CH 80V 11A 8-Pin TDSON (Alt: BSC123N08NS3 G)
	Mfr.#: BSC123N08NS3GATMA1 OMO.#: OMO-BSC123N08NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 80V 55A TDSON-8
	Mfr.#: BSC123N08NS3GATMA1 , TDZ OMO.#: OMO-BSC123N08NS3GATMA1-TDZ-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von BSC123N08NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,47 $~~; ~~0,47 $~~

10: ~~0,45 $~~; ~~4,50 $~~

100: ~~0,43 $~~; ~~42,61 $~~

500: ~~0,40 $~~; ~~201,20 $~~

1000: ~~0,38 $~~; ~~378,70 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC123N08NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes