FDS6900AS

FDS6900AS
Mfr. #:
FDS6900AS
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET Dual NCh PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDS6900AS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
6.9 A
Rds On - Drain-Source-Widerstand:
22 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench-SyncFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
FDS6900AS
Transistortyp:
2 N-Channel
Typ:
MOSFET
Breite:
3.9 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
25 S, 21 S
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
9 ns
Teil # Aliase:
FDS6900AS_NL
Gewichtseinheit:
0.006596 oz
Tags
FDS6900A, FDS690, FDS69, FDS6, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    Two modules were not working

    2019-03-28
    I***v
    I***v
    RU

    Correspond to parameters

    2019-04-13
    M***n
    M***n
    RU

    Nearly three months delivery...

    2019-04-13
    M***r
    M***r
    RU

    It didn't come. The seller quickly returned the money.

    2019-03-10
***ical
Trans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:6.9A; Cont Current Id N Channel 3:8.2A; Current Id Max:8.2A; No. of Transistors:1; On State Resistance Channel 1:27mohm; On State Resistance N Channel 2:22mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Teil # Mfg. Beschreibung Aktie Preis
FDS6900AS
DISTI # FDS6900ASCT-ND
ON SemiconductorMOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
736In Stock
  • 1000:$0.5081
  • 500:$0.6437
  • 100:$0.8300
  • 10:$1.0500
  • 1:$1.1900
FDS6900AS
DISTI # FDS6900ASDKR-ND
ON SemiconductorMOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
736In Stock
  • 1000:$0.5081
  • 500:$0.6437
  • 100:$0.8300
  • 10:$1.0500
  • 1:$1.1900
FDS6900AS
DISTI # FDS6900ASTR-ND
ON SemiconductorMOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.4605
FDS6900AS
DISTI # FDS6900AS
ON SemiconductorTrans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R (Alt: FDS6900AS)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.6849
  • 5000:€0.5329
  • 10000:€0.4419
  • 15000:€0.3729
  • 25000:€0.3449
FDS6900AS
DISTI # FDS6900AS
ON SemiconductorTrans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R (Alt: FDS6900AS)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    FDS6900AS
    DISTI # FDS6900AS
    ON SemiconductorTrans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6900AS)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.3559
    • 5000:$0.3539
    • 10000:$0.3499
    • 15000:$0.3449
    • 25000:$0.3369
    FDS6900AS
    DISTI # 64K0981
    ON SemiconductorTRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,6.9A I(D),SO0
    • 1:$0.4220
    • 2500:$0.4190
    • 10000:$0.4040
    • 25000:$0.3920
    FDS6900AS
    DISTI # 61M6320
    ON SemiconductorMOSFET, DUAL, N, SMD, SO-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V,Product Range:-RoHS Compliant: Yes174
    • 1:$0.9900
    • 10:$0.8380
    • 25:$0.7730
    • 50:$0.7080
    • 100:$0.6430
    • 250:$0.6060
    • 500:$0.5690
    • 1000:$0.4490
    FDS6900AS
    DISTI # 512-FDS6900AS
    ON SemiconductorMOSFET Dual NCh PowerTrench
    RoHS: Compliant
    502
    • 1:$0.9900
    • 10:$0.8380
    • 100:$0.6430
    • 500:$0.5690
    • 1000:$0.4490
    • 2500:$0.3980
    FDS6900ASFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 8.2A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    73441
    • 1000:$0.5700
    • 500:$0.6000
    • 100:$0.6200
    • 25:$0.6500
    • 1:$0.7000
    FDS6900ASFairchild Semiconductor Corporation 13934
      FDS6900AS
      DISTI # 6710643P
      ON SemiconductorMOSFET N-CHANNEL 30V 6.9A/8.2A SOIC8, RL675
      • 50:£0.3920
      • 100:£0.3580
      FDS6900AS
      DISTI # FDS6900AS
      ON SemiconductorTransistor: N-MOSFET x2,unipolar,30V,8.2/6.9A,1.6W,SO8489
      • 1:$1.5300
      • 5:$1.3500
      • 25:$1.1500
      • 100:$1.0200
      FDS6900AS INSTOCK870
        FDS6900AS
        DISTI # 1495214
        ON SemiconductorMOSFET, DUAL, N, SMD, SO-8
        RoHS: Compliant
        174
        • 1:$1.5700
        • 10:$1.3300
        • 100:$1.0200
        • 500:$0.9000
        • 1000:$0.7110
        • 2500:$0.6300
        Bild Teil # Beschreibung
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        OMO.#: OMO-CC0603KRX7R9BB224

        Multilayer Ceramic Capacitors MLCC - SMD/SMT .22uF 50V 10% 0603 Case Size
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        Mfr.#: C3216X7R1E475K160AE

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        OMO.#: OMO-RC0805JR-070RL

        Thick Film Resistors - SMD ZERO OHM JUMPER
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        OMO.#: OMO-IS25LP016D-JNLE-TR-INTEGRATED-SILICON-SOLUTION

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        Verfügbarkeit
        Aktie:
        447
        Auf Bestellung:
        2430
        Menge eingeben:
        Der aktuelle Preis von FDS6900AS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,98 $
        0,98 $
        10
        0,84 $
        8,38 $
        100
        0,64 $
        64,30 $
        500
        0,57 $
        284,50 $
        1000
        0,45 $
        449,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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