BSM300GA170DLS

BSM300GA170DLS
Mfr. #:
BSM300GA170DLS
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Trans IGBT Module N-CH 1.7kV 300A nom - Bulk (Alt: BSM300GA170DLS)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSM300GA170DLS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BSM300GA170DL, BSM300GA17, BSM300GA1, BSM300GA, BSM300G, BSM300, BSM30, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor IGBT Module N-CH 1700V 600A 20V Screw Mount
***S
new, original packaged
***omponent
Infineon power module
***el Nordic
Contact for details
***ical
Trans IGBT Module N-CH 1200V 600A 2100000mW 11-Pin ECONOD-3 Tray
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 9.4pF 100volts C0G +/-0.25pF
***ure Electronics
FF450R12ME3 Series 1200 V 600 A 2100 W Chassis Mount EconoDUAL™ IGBT Module
***et
Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray
***ical
Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
***ark
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
*** Source Electronics
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
***ure Electronics
FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
***nell
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ineon
Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ure Electronics
APTGT300x Series 600 V 430 A Trench + Field Stop IGBT Power Module - SP4
*** Stop Electro
Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 430A 10-Pin Case SP4
***rochip SCT
High Voltage Power Module, Phase leg, 600V, RoHS
***ark
PM-IGBT-TFS-SP4 SP4 Tube RoHS Compliant: Yes
***i-Key
POWER MOD IGBT TRENCH PH LEG SP4
***ure Electronics
APTGT450x Series 600 V 550 A Trench + Field Stop IGBT Power Module - SP6
*** Stop Electro
Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel
***ical
Trans IGBT Module N-CH 600V 550A 1750000mW 7-Pin Case SP-6 Tube
***rochip SCT
High Voltage Power Module, Phase leg, 600V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
POWER MOD IGBT TRENCH PH LEG SP6
***ure Electronics
APTGT600x Series 600 V 700 A Trench + Field Stop IGBT® Power Module - SP6
*** Stop Electro
Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 700A 7-Pin Case SP6
***rochip SCT
High Voltage Power Module, Phase leg, 600V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
POWER MODULE IGBT 600V 600A SP6
***el Electronic
IGBT MODULE 600V 700A 2300W SP6
Teil # Mfg. Beschreibung Aktie Preis
BSM300GA170DLS
DISTI # BSM300GA170DLS
Infineon Technologies AGTrans IGBT Module N-CH 1.7kV 300A nom - Bulk (Alt: BSM300GA170DLS)
RoHS: Not Compliant
Min Qty: 3
Container: Bulk
Americas - 0
  • 30:$154.0900
  • 15:$156.8900
  • 9:$162.3900
  • 6:$168.4900
  • 3:$174.7900
BSM300GA170DLS
DISTI # 641-BSM300GA170DLS
Infineon Technologies AGIGBT Modules N-CH 1.7KV 600A0
    BSM300GA170DLSInfineon Technologies AGTrans IGBT Module N-CH 1.7KV 600A 5-Pin
    RoHS: Not Compliant
    33
    • 1000:$159.6300
    • 500:$168.0300
    • 100:$174.9400
    • 25:$182.4400
    • 1:$196.4700
    Bild Teil # Beschreibung
    BSM300GA120DN2

    Mfr.#: BSM300GA120DN2

    OMO.#: OMO-BSM300GA120DN2

    IGBT Modules 1200V 300A SINGLE
    BSM300GA120DLS

    Mfr.#: BSM300GA120DLS

    OMO.#: OMO-BSM300GA120DLS-1190

    Neu und Original
    BSM300GA120DN11

    Mfr.#: BSM300GA120DN11

    OMO.#: OMO-BSM300GA120DN11-1190

    Neu und Original
    BSM300GA120DN2FS-E3256

    Mfr.#: BSM300GA120DN2FS-E3256

    OMO.#: OMO-BSM300GA120DN2FS-E3256-1190

    Neu und Original
    BSM300GA170DN2E3166

    Mfr.#: BSM300GA170DN2E3166

    OMO.#: OMO-BSM300GA170DN2E3166-1190

    Neu und Original
    BSM300GA170DN2SE3256

    Mfr.#: BSM300GA170DN2SE3256

    OMO.#: OMO-BSM300GA170DN2SE3256-1190

    Neu und Original
    BSM300GA170DN2SFE3226

    Mfr.#: BSM300GA170DN2SFE3226

    OMO.#: OMO-BSM300GA170DN2SFE3226-1190

    Neu und Original
    BSM300GAL120DLC

    Mfr.#: BSM300GAL120DLC

    OMO.#: OMO-BSM300GAL120DLC-1190

    IGBT Modules 1200V 300A CHOPPER
    BSM300GB120DLCHOSA1

    Mfr.#: BSM300GB120DLCHOSA1

    OMO.#: OMO-BSM300GB120DLCHOSA1-INFINEON-TECHNOLOGIES

    IGBT 2 MED POWER 62MM-1
    BSM300GB120DLC

    Mfr.#: BSM300GB120DLC

    OMO.#: OMO-BSM300GB120DLC-125

    IGBT Modules 1200V 300A DUAL
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von BSM300GA170DLS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    231,14 $
    231,14 $
    10
    219,58 $
    2 195,78 $
    100
    208,02 $
    20 802,15 $
    500
    196,46 $
    98 232,40 $
    1000
    184,91 $
    184 908,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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