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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD7N10LE | Harris Semiconductor | Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 5942 |
|
| RFD7N10LE | Intersil Corporation | MOSFET Transistor, N-Channel, TO-251AA | 6110 |
|
| RFD7N10LE | Harris Semiconductor | MOSFET Transistor, N-Channel, TO-251AA | 46 |
|
| RFD7N10LESM | Intersil Corporation | 2889 | ||
| RFD7N10LESM | Harris Semiconductor | 19 | ||
| RFD7N10LESM | Harris Semiconductor | 1155 | ||
| RFD7N10LE | Harris Semiconductor | 58 | ||
| RFD7N10LE | Intersil Corporation | 500 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Temperature Sensor Development Tools AS6200 Precision Temperature Kit |
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Bluetooth Development Tools (802.15.1) SIMBLEE BLE Development Kit |
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Mfr.#: RFD70N06 OMO.#: OMO-RFD70N06-1190 |
Neu und Original |
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Mfr.#: RFD77101 OMO.#: OMO-RFD77101-RF-DIGITAL |
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RFD77101 Bluetooth Simblee™ Starter Kit |
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Mfr.#: RFD7N10LE OMO.#: OMO-RFD7N10LE-1190 |
Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD7N10LESM OMO.#: OMO-RFD7N10LESM-1190 |
Neu und Original |