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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSC031N06NS3 G DISTI # 30610688 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 9995 |
|
| BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC031N06NS3 G DISTI # C1S322000192300 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 9295 |
|
| BSC031N06NS3GXT DISTI # BSC031N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC031N06NS3GATMA1 DISTI # 85X4151 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, 139W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 |
|
| BSC031N06NS3 G DISTI # 726-BSC031N06NS3G | Infineon Technologies AG | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC031N06NS3GATMA1 DISTI # 7545257P | Infineon Technologies AG | MOSFET N-CHANNEL 60V 100A TDSON8, RL | 1 |
|
| BSC031N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2510 | |
| BSC031N06NS3G | Infineon Technologies AG | 1181 | ||
| BSC031N06NS3G | Infineon Technologies AG | 60V,100A,N Channel Power MOSFET | 205 |
|
| BSC031N06NS3GATMA1 DISTI # 2443369 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC031N06NS3GATMA1 DISTI # 2443369RL | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC031N06NS3GATMA1 DISTI # 2443369 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 90 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSC031N06NS3 G OMO.#: OMO-BSC031N06NS3-G |
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC031N06NS3 OMO.#: OMO-BSC031N06NS3-1190 |
Neu und Original |
|
|
Mfr.#: BSC031N06NS3 G OMO.#: OMO-BSC031N06NS3-G-1190 |
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R |
|
|
Mfr.#: BSC031N06NS3G OMO.#: OMO-BSC031N06NS3G-1190 |
Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC031N06NS3GATMA1 |
MOSFET N-CH 60V 100A TDSON-8 |
|
|
Mfr.#: BSC031N06NS3GATMA1 , TDA |
Neu und Original |