IPW65R150CFDAFKSA1

IPW65R150CFDAFKSA1
Mfr. #:
IPW65R150CFDAFKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 650V TO247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW65R150CFDAFKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPW65R150CFDAFKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPW65R15, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 240, N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 Infineon IPW65R150CFDAFKSA1
***ure Electronics
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS™ Power Mosfet - TO247-3
***ical
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-247 Tube
***i-Key
MOSFET N-CH 650V TO247
***et Europe
MOS Power Transistors HV (>= 200V)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPW65R150CFDAFKSA1
DISTI # 33111817
Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 240:$2.5982
IPW65R150CFDAFKSA1
DISTI # IPW65R150CFDAFKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V TO247
RoHS: Compliant
Min Qty: 240
Container: Tube
Temporarily Out of Stock
  • 240:$4.2475
IPW65R150CFDAFKSA1
DISTI # V36:1790_06378200
Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
  • 240000:$2.5140
  • 120000:$2.5180
  • 24000:$3.0390
  • 2400:$4.0690
  • 240:$4.2480
IPW65R150CFDAFKSA1
DISTI # IPW65R150CFDAFKSA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R150CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 120
  • 2400:$2.6360
  • 1200:$2.6837
  • 720:$2.7771
  • 480:$2.8813
  • 240:$2.9892
IPW65R150CFDAFKSA1
DISTI # SP000928274
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928274)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.2900
  • 500:€2.3900
  • 100:€2.4900
  • 50:€2.5900
  • 25:€2.6900
  • 10:€2.8900
  • 1:€3.5900
IPW65R150CFDAFKSA1
DISTI # 726-IPW65R150CFDAFKS
Infineon Technologies AGMOSFET N-Ch 650V 22.4A TO247-3
RoHS: Compliant
0
  • 1:$5.4900
  • 10:$4.6600
  • 100:$4.0400
  • 250:$3.8300
  • 500:$3.4400
Bild Teil # Beschreibung
IPW65R150CFD

Mfr.#: IPW65R150CFD

OMO.#: OMO-IPW65R150CFD

MOSFET N-Ch 700V 22.4A TO247-3
IPW65R150CFDFKSA1

Mfr.#: IPW65R150CFDFKSA1

OMO.#: OMO-IPW65R150CFDFKSA1

MOSFET N-Ch 700V 22.4A TO247-3
IPW65R150CFDAFKSA1

Mfr.#: IPW65R150CFDAFKSA1

OMO.#: OMO-IPW65R150CFDAFKSA1

MOSFET N-Ch 650V 22.4A TO247-3
IPW65R150CFDFKSA2

Mfr.#: IPW65R150CFDFKSA2

OMO.#: OMO-IPW65R150CFDFKSA2

MOSFET
IPW65R150CFDFKSA2

Mfr.#: IPW65R150CFDFKSA2

OMO.#: OMO-IPW65R150CFDFKSA2-INFINEON-TECHNOLOGIES

HIGH POWER_LEGACY
IPW65R150CFD

Mfr.#: IPW65R150CFD

OMO.#: OMO-IPW65R150CFD-1190

MOSFET N-Ch 700V 22.4A TO247-3
IPW65R150CFDA

Mfr.#: IPW65R150CFDA

OMO.#: OMO-IPW65R150CFDA-1190

Neu und Original
IPW65R150CFDAFKSA1

Mfr.#: IPW65R150CFDAFKSA1

OMO.#: OMO-IPW65R150CFDAFKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V TO247
IPW65R150CFDFKSA1

Mfr.#: IPW65R150CFDFKSA1

OMO.#: OMO-IPW65R150CFDFKSA1-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET N-Ch 700V 22.4A TO247-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IPW65R150CFDAFKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,77 $
3,77 $
10
3,58 $
35,82 $
100
3,39 $
339,39 $
500
3,21 $
1 602,70 $
1000
3,02 $
3 016,80 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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