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PD20010TR-E

PD20010TR-E
Mfr. #:
PD20010TR-E
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors RF power tran LdmoST N-chann
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PD20010TR-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD20010TR-E DatasheetPD20010TR-E Datasheet (P4-P6)PD20010TR-E Datasheet (P7-P9)PD20010TR-E Datasheet (P10-P12)PD20010TR-E Datasheet (P13)
ECAD Model:
Mehr Informationen:
PD20010TR-E Mehr Informationen PD20010TR-E Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
5 A
Vds - Drain-Source-Durchbruchspannung:
40 V
Gewinnen:
11 dB
Ausgangsleistung:
10 W
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PowerSO-10RF-Formed-4
Verpackung:
Spule
Aufbau:
Single
Arbeitsfrequenz:
2 GHz
Serie:
PD20010-E
Typ:
HF-Leistungs-MOSFET
Marke:
STMicroelectronics
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
59 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
15 V
Gewichtseinheit:
0.105822 oz
Tags
PD20010, PD2001, PD200, PD20, PD2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics SCT
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***icroelectronics
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
***et
Transistor RF FET N-CH 40V 5A 2GHz 3-Pin PowerSO-10RF T/R
***i-Key
TRANS N-CH 40V POWERSO-10RF FORM
Teil # Mfg. Beschreibung Aktie Preis
PD20010TR-E
DISTI # 497-10096-1-ND		STMicroelectronicsTRANS N-CH 40V POWERSO-10RF FORM
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		390In Stock
  • 100:$14.5225
  • 10:$17.1950
  • 1:$18.7100
PD20010TR-E
DISTI # 497-10096-6-ND		STMicroelectronicsTRANS N-CH 40V POWERSO-10RF FORM
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		390In Stock
  • 100:$14.5225
  • 10:$17.1950
  • 1:$18.7100
PD20010TR-E
DISTI # 497-10096-2-ND		STMicroelectronicsTRANS N-CH 40V POWERSO-10RF FORM
RoHS: Compliant
Min Qty: 600
Container: Tape & Reel (TR)		On Order
  • 600:$12.5425
PD20010TR-E
DISTI # PD20010TR-E		STMicroelectronicsTrans MOSFET N-CH 40V 5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) T/R - Tape and Reel (Alt: PD20010TR-E)
RoHS: Compliant
Min Qty: 600
Container: Reel		Americas - 0
  • 600:$12.8900
  • 1200:$12.2900
  • 2400:$11.7900
  • 3600:$11.1900
  • 6000:$10.9900
PD20010-E
DISTI # 511-PD20010-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		327
  • 1:$18.1600
  • 10:$16.7000
  • 25:$16.0100
  • 100:$14.1000
  • 250:$13.4100
  • 500:$12.5500
PD20010TR-E
DISTI # 511-PD20010TR-E		STMicroelectronicsRF MOSFET Transistors RF power tran LdmoST N-chann
RoHS: Compliant		0
  • 600:$12.5500
PD20010TR-E
DISTI # PD20010TR-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
    Bild Teil # Beschreibung
    PD20010S-E

    Mfr.#: PD20010S-E

    OMO.#: OMO-PD20010S-E

    		 RF MOSFET Transistors POWER R.F.
    PD20010STR-E

    Mfr.#: PD20010STR-E

    OMO.#: OMO-PD20010STR-E

    		 RF MOSFET Transistors RF power tran LdmoST N-chann
    PD2001

    Mfr.#: PD2001

    OMO.#: OMO-PD2001-1190

    		 Neu und Original
    PD20012

    Mfr.#: PD20012

    OMO.#: OMO-PD20012-1190

    		 Neu und Original
    PD2002A

    Mfr.#: PD2002A

    OMO.#: OMO-PD2002A-1190

    		 Neu und Original
    PD200FG80

    Mfr.#: PD200FG80

    OMO.#: OMO-PD200FG80-1190

    		 Neu und Original
    PD200HB160

    Mfr.#: PD200HB160

    OMO.#: OMO-PD200HB160-1190

    		 Neu und Original
    PD200KN16

    Mfr.#: PD200KN16

    OMO.#: OMO-PD200KN16-1190

    		 Neu und Original
    PD200S

    Mfr.#: PD200S

    OMO.#: OMO-PD200S-1190

    		 Neu und Original
    PD20010STR-E

    Mfr.#: PD20010STR-E

    OMO.#: OMO-PD20010STR-E-STMICROELECTRONICS

    		 RF MOSFET Transistors RF power tran LdmoST N-chann
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von PD20010TR-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    18,16 $
    18,16 $
    10
    16,70 $
    167,00 $
    25
    16,01 $
    400,25 $
    100
    14,10 $
    1 410,00 $
    250
    13,41 $
    3 352,50 $
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