RSH070P05GZETB

Mfr. #:: RSH070P05GZETB
Hersteller:: Rohm Semiconductor
Beschreibung:: MOSFET LVDS Deserializer 100-Pin TQFP-V Tray
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: RSH070P05GZETB Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: RSH070P05GZETB Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOP-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 45 V

Id - Kontinuierlicher Drainstrom:: 7 A

Rds On - Drain-Source-Widerstand:: 19 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 47.6 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Transistortyp:: 1 P-Channel

Marke:: ROHM Halbleiter

Abfallzeit:: 50 ns

Produktart:: MOSFET

Anstiegszeit:: 35 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 135 ns

Typische Einschaltverzögerungszeit:: 31 ns

Teil # Aliase:: RSH070P05

Tags: RSH070P, RSH07, RSH0, RSH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RSH070P05GZETB Bewertungen und Rezensionen

I***a

Belarus has reached in 50 days. Externally correspond to the description. The work was not checked.

2019-05-11

A***v

Delivery month, quality is excellent

2019-06-01

M***N

Perfect! Thank you very much! A+++++++++++++++++++++

2019-02-20

RSH070P05GZETB Beschreibung

*** Source Electronics: Trans MOSFET P-CH Si 45V 7A 8-Pin SOP T/R / MOSFET P-CH 45V 7A SOP8

***ment14 APAC: MOSFET, P-CH, -45V, -7A, SOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-7A; Source Voltage Vds:-45V; On Resistance

***nell: MOSFET, P-CH, -45V, -7A, SOP; Transistor Polarity: P Channel; Continuous Drain Current Id: -7A; Drain Source Voltage Vds: -45V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***(Formerly Allied Electronics): SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor; 6.5 A; 40 V; 8-Pin SOIC

***et Europe: Transistor MOSFET Array Dual P-CH 40V 8A 8-Pin SOIC T/R

***enic: 40V 8A 27m´Î@10V8A 3.2W 2.5V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, P Channel:-40V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.021ohm; Power Dissipation Pd:3.2W

***emi: P-Channel PowerTrench® MOSFET, 40V, -8.2A, 27mΩ

*** Source Electronics: MOSFET P-CH 40V 8.2A 8SOIC / Trans MOSFET P-CH 40V 8.2A 8-Pin SOIC T/R

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

***nell: MOSFET, P CH, 40V, 8.2A, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:1.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -8.2 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5

***ure Electronics: Dual N-Channel 40 V 0.024 Ohm 28.4 nC TrenchFET® Automotive Mosfet - SOIC-8

***ow.cn: Trans MOSFET N-CH 40V 8A Automotive 8-Pin SOIC N T/R

***ark: Dual N-Channel 40-V (D-S) 175C Mosfet

***ure Electronics: N-Channel 40 V 29 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET, 40V, 7.6A, 29mΩ

***rchild Semiconductor: These N-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

***ark: MOSFET Transistor, N and P Channel, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V

***et Europe: Trans MOSFET N/P-CH 40V 6.1A/5.2A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N & P-CH, 40V, 6.1A, SOIC-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.1A; Source Voltage Vds:40V; On

***rchild Semiconductor: These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

***et: Transistor MOSFET Array Dual N-CH 40V 9A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 40 V 24 mOhm Surface Mount Enhancement Mode Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 40V 7A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): MOSFET Dual N-Ch 40V 9A Enhanc. SOIC8

***ark: Mosfet, Dual, N-Ch, 40V, 7A Rohs Compliant: Yes

***des Inc SCT: 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

*** Stop Electro: Small Signal Field-Effect Transistor

RSH070P05GZETB Mehr Informationen

Silicon Power MOSFETs: ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
RSH070P05GZETB DISTI # RSH070P05GZETBCT-ND	ROHM Semiconductor	MOSFET P-CH 45V 7A SOP8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2150In Stock	1000:$0.9095 500:$1.0977 100:$1.3361 10:$1.6620 1:$1.8500
RSH070P05GZETB DISTI # RSH070P05GZETBDKR-ND	ROHM Semiconductor	MOSFET P-CH 45V 7A SOP8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2150In Stock	1000:$0.9095 500:$1.0977 100:$1.3361 10:$1.6620 1:$1.8500
RSH070P05GZETB DISTI # RSH070P05GZETBTR-ND	ROHM Semiconductor	MOSFET P-CH 45V 7A SOP8 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.8222
RSH070P05GZETB DISTI # RSH070P05GZETB	ROHM Semiconductor	Trans MOSFET P 45V ±7A 8-Pin SOP T/R - Tape and Reel (Alt: RSH070P05GZETB) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.7809 15000:$0.8029 10000:$0.8499 5000:$0.9029 2500:$0.9629
RSH070P05GZETB DISTI # RSH070P05GZETB	ROHM Semiconductor	Trans MOSFET P 45V ±7A 8-Pin SOP T/R (Alt: RSH070P05GZETB) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	5000:€0.6950 1000:€0.7520 500:€0.9780 250:€1.0500 100:€1.1100 25:€1.4000 5:€1.5300
RSH070P05GZETB DISTI # 10AC8957	ROHM Semiconductor	MOSFET, P-CH, -45V, -7A, SOP,Transistor Polarity:P Channel,Continuous Drain Current Id:-7A,Drain Source Voltage Vds:-45V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes	3127	1000:$0.8920 500:$1.0600 250:$1.1600 100:$1.2300 50:$1.3400 25:$1.4400 10:$1.5500 1:$1.8200
RSH070P05GZETB DISTI # 755-RSH070P05GZETB	ROHM Semiconductor	MOSFET LVDS Deserializer 100-Pin TQFP-V Tray RoHS: Compliant	0	1:$1.8000 10:$1.5300 100:$1.2200 500:$1.0700 1000:$0.8830 2500:$0.8230 5000:$0.7920 10000:$0.7620
RSH070P05GZETB	ROHM Semiconductor		3444	1020:$1.7850 455:$1.9635 1:$3.5700
RSH070P05GZETB	ROHM Semiconductor		100	1:¥17.8355 100:¥10.1127 1250:¥6.4115 2500:¥4.7765
RSH070P05GZETB DISTI # 2706666	ROHM Semiconductor	MOSFET, P-CH, -45V, -7A, SOP RoHS: Compliant	3127	1000:$1.3800 500:$1.6600 100:$2.0200 10:$2.5100 1:$2.7900
RSH070P05GZETB DISTI # 2706666	ROHM Semiconductor	MOSFET, P-CH, -45V, -7A, SOP	3430	500:£0.8070 250:£0.8650 100:£0.9230 25:£1.1600 5:£1.3300
RSH070P05GZETB	ROHM Semiconductor	RoHS(ship within 1day)	1825	1:$2.2100 10:$1.6600 50:$1.1000 100:$0.8800 500:$0.8300 1000:$0.7900

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von RSH070P05GZETB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,80 $~~; ~~1,80 $~~

10: ~~1,53 $~~; ~~15,30 $~~

100: ~~1,22 $~~; ~~122,00 $~~

500: ~~1,07 $~~; ~~535,00 $~~

1000: ~~0,88 $~~; ~~883,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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