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IPB136N08N3GATMA1

IPB136N08N3GATMA1
Mfr. #:
IPB136N08N3GATMA1
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Trans MOSFET N-CH 80V 45A 3-Pin TO-263 Tube - Bulk (Alt: IPB136N08N3GATMA1)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB136N08N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPB136N08N3G, IPB136, IPB13, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
45 A 80 V 0.0136 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***et
Trans MOSFET N-CH 80V 45A 3-Pin TO-263 Tube
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
*** Electronics
In a Pack of 25, N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK Infineon IPB081N06L3GATMA1
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ure Electronics
Single N-Channel 60 V 9 mOhm 36 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:71W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***et
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-263
***i-Key
N-CHANNEL POWER MOSFET
***ment14 APAC
MOSFET, N CH, 50A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:56W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***emi
N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ
***ure Electronics
N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***rchild Semiconductor
This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
***et
MOSFET 100V N-Channel A-FET
***i-Key
N-CHANNEL POWER MOSFET
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):110mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
***ure Electronics
IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263
***ical
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
***ark
N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N, 200V, 9A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 74W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D2-PAK; Current Id Max: 9A; Junction to Case Thermal Resistance A: 1.7°C/W; On State resistance @ Vgs = 10V: 300mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 36A; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Teil # Mfg. Beschreibung Aktie Preis
IPB136N08N3GATMA1
DISTI # IPB136N08N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 45A 3-Pin TO-263 Tube - Bulk (Alt: IPB136N08N3GATMA1)
RoHS: Compliant
Min Qty: 736
Container: Bulk		Americas - 0
  • 7360:$0.4319
  • 3680:$0.4389
  • 2208:$0.4549
  • 1472:$0.4719
  • 736:$0.4889
IPB136N08N3 G
DISTI # 726-IPB136N08N3G		Infineon Technologies AGMOSFET N-Ch 80V 45A D2PAK-2 OptiMOS 3
RoHS: Compliant		0
    IPB136N08N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 45A I(D), 80V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		4000
    • 1000:$0.4500
    • 500:$0.4700
    • 100:$0.4900
    • 25:$0.5100
    • 1:$0.5500
    Bild Teil # Beschreibung
    IPB136N08N3

    Mfr.#: IPB136N08N3

    OMO.#: OMO-IPB136N08N3-1190

    		 Neu und Original
    IPB136N08N3G

    Mfr.#: IPB136N08N3G

    OMO.#: OMO-IPB136N08N3G-1190

    		 Neu und Original
    IPB136N08N3GATMA1

    Mfr.#: IPB136N08N3GATMA1

    OMO.#: OMO-IPB136N08N3GATMA1-1190

    		 Trans MOSFET N-CH 80V 45A 3-Pin TO-263 Tube - Bulk (Alt: IPB136N08N3GATMA1)
    IPB136N08N3GS

    Mfr.#: IPB136N08N3GS

    OMO.#: OMO-IPB136N08N3GS-1190

    		 Neu und Original
    IPB136N08N3 G

    Mfr.#: IPB136N08N3 G

    OMO.#: OMO-IPB136N08N3-G-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET N-Ch 80V 45A D2PAK-2 OptiMOS 3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von IPB136N08N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,75 $
    0,75 $
    10
    0,71 $
    7,12 $
    100
    0,68 $
    67,50 $
    500
    0,64 $
    318,75 $
    1000
    0,60 $
    600,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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