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IPA65R420CFD

IPA65R420CFD
Mfr. #:
IPA65R420CFD
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 8.7A TO220FP CoolMOS CFD2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPA65R420CFD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPA65R420CFD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
8.7 A
Rds On - Drain-Source-Widerstand:
420 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
32 nC
Pd - Verlustleistung:
31.25 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
16.15 mm
Länge:
10.65 mm
Serie:
CoolMOS CFD2
Transistortyp:
1 N-Channel
Breite:
4.85 mm
Marke:
Infineon-Technologien
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Teil # Aliase:
IPA65R420CFDXKSA1 IPA65R42CFDXK SP000890322
Gewichtseinheit:
0.211644 oz
Tags
IPA65R42, IPA65R4, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPA65R420CFDXKSA1
DISTI # 30720062		Infineon Technologies AGTrans MOSFET N-CH 700V 8.7A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		1000
  • 1000:$0.8375
  • 500:$0.8629
  • 250:$0.8898
  • 100:$0.9185
  • 13:$0.9492
IPA65R420CFD
DISTI # 30603263		Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Full-Pak
RoHS: Compliant		220
  • 100:$0.7166
IPA65R420CFDXKSA1
DISTI # IPA65R420CFDXKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.2008
IPA65R420CFD
DISTI # C1S322000159688		Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		220
  • 100:$0.5620
IPA65R420CFDXKSA1
DISTI # C1S322000566435		Infineon Technologies AGTrans MOSFET N-CH 700V 8.7A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		1000
  • 1000:$1.0200
  • 500:$1.3300
  • 100:$1.4500
  • 25:$1.7700
  • 5:$2.1800
IPA65R420CFDXK
DISTI # IPA65R420CFDXKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Full-Pak Tube - Rail/Tube (Alt: IPA65R420CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$0.8979
  • 1000:$0.8659
  • 2000:$0.8349
  • 3000:$0.8059
  • 5000:$0.7919
IPA65R420CFDXKSA2
DISTI # IPA65R420CFDXKSA2		Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R420CFDXKSA2)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
    IPA65R420CFD
    DISTI # 726-IPA65R420CFD    		Infineon Technologies AGMOSFET N-Ch 650V 8.7A TO220FP CoolMOS CFD2
    RoHS: Compliant    		256
    • 1:$1.7400
    • 10:$1.4800
    • 100:$1.1900
    IPA65R420CFDXKSA2
    DISTI # 726-IPA65R420CFDXKSA    		Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
    RoHS: Compliant    		0
    • 1:$1.8400
    • 10:$1.5600
    • 100:$1.2500
    • 500:$1.1000
    IPA65R420CFDInfineon Technologies AGPower Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		975
    • 1000:$0.7500
    • 500:$0.7900
    • 100:$0.8200
    • 25:$0.8600
    • 1:$0.9200
    IPA65R420CFDXKSA1
    DISTI # 8977523P    		Infineon Technologies AGMOSFET N-CH 650V 8.7A COOLMOS TO220, TU440
    • 25:£0.5660
    Bild Teil # Beschreibung
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    109-133

    Mfr.#: 109-133

    OMO.#: OMO-109-133

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    FCPF380N65FL1

    Mfr.#: FCPF380N65FL1

    OMO.#: OMO-FCPF380N65FL1-ON-SEMICONDUCTOR

    		 MOSFET N-CH 650V 10.2A TO220
    Verfügbarkeit
    Aktie:
    81
    Auf Bestellung:
    2064
    Menge eingeben:
    Der aktuelle Preis von IPA65R420CFD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,74 $
    1,74 $
    10
    1,48 $
    14,80 $
    100
    1,19 $
    119,00 $
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