SI1988DH-T1-E3

SI1988DH-T1-E3
Mfr. #:
SI1988DH-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 78-SI1922EDH-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI1988DH-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1988DH-T1-E3 DatasheetSI1988DH-T1-E3 Datasheet (P4-P6)SI1988DH-T1-E3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1 mm
Länge:
2.1 mm
Serie:
SI1
Breite:
1.25 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI1988DH-E3
Gewichtseinheit:
0.000265 oz
Tags
SI19, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TransMOSFETNCH20V13A6PinSC70TR
***ark
Transistor;TransistorTypeMOSFET;TransistorPolarityDualNChannel;DrainSourceVoltageVds20V;ContinuousDrainCurrentId1300mA;OnResistanceRdson025ohm;RdsonTestVoltageVgs8V;ThresholdVoltageVgsTyp1V;RoHSCompliantYes
***nell
MOSFETDUALNSC70;TransistorTypeMOSFET;TransistorPolarityDualN;VoltageVdsTyp20V;CurrentIdCont13A;ResistanceRdsOn0168ohm;VoltageVgsRdsonMeasurement45V;VoltageVgsthTyp1V;CaseStyleSOT323SC70;TerminationTypeSMD;BaseNumber1988;CurrentIdmPulse4A;NchannelGateCharge16nC;NoofPins6;PowerDissipation125mW;PowerPd125W;ResistanceRdsonVgs18V025ohm;ResistanceRdsonVgs25V02ohm;ResistanceRdsonVgs45V0168ohm;VoltageRdsMeasurement45V;VoltageVdsMax20V;VoltageVgsthMax1V;VoltageVgsthMin04V
Teil # Mfg. Beschreibung Aktie Preis
SI1988DH-T1-E3
DISTI # SI1988DH-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI1988DH-T1-E3
    DISTI # SI1988DH-T1-E3CT-ND
    Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI1988DH-T1-E3
      DISTI # SI1988DH-T1-E3DKR-ND
      Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI1988DH-T1-E3
        DISTI # 781-SI1988DH-T1-E3
        Vishay IntertechnologiesMOSFET DUAL N-CH 20V(D-S)
        RoHS: Compliant
        0
          Bild Teil # Beschreibung
          SI1988DH-T1-E3

          Mfr.#: SI1988DH-T1-E3

          OMO.#: OMO-SI1988DH-T1-E3

          MOSFET RECOMMENDED ALT 78-SI1922EDH-T1-GE3
          SI1988DH-T1-E3

          Mfr.#: SI1988DH-T1-E3

          OMO.#: OMO-SI1988DH-T1-E3-VISHAY

          IGBT Transistors MOSFET DUAL N-CH 20V(D-S)
          SI1988DH-T1-GE3

          Mfr.#: SI1988DH-T1-GE3

          OMO.#: OMO-SI1988DH-T1-GE3-VISHAY

          MOSFET 2N-CH 20V 1.3A SC-70-6
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3000
          Menge eingeben:
          Der aktuelle Preis von SI1988DH-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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