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IDW30G120C5BFKSA1

IDW30G120C5BFKSA1
Mfr. #:
IDW30G120C5BFKSA1
Hersteller:
Infineon Technologies
Beschreibung:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IDW30G120C5BFKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Dioden, Gleichrichter - Einzeln
Produkt
Schottky-Siliziumkarbid-Dioden
Verpackung
Rohr
Teil-Aliasnamen
IDW30G120C5B SP001123716
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Technologie
SiC
Aufbau
Doppelanode gemeinsame Kathode
Pd-Verlustleistung
332 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Uf-Vorwärtsspannung
1.4 V
Vr-Rückwärtsspannung
1.2 kV
Ir-Gegenstrom
17 uA
If-Forward-Current
30 A
Vrrm-Repetitive-Reverse-Voltage
1.2 kV
Ifsm-Forward-Surge-Current
240 A
Tags
IDW30G1, IDW30G, IDW30, IDW3, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDW30G120C5B Series 1200V 87 A 5th Generation ThinQ!™SiC Schottky Diode-TO-247-3
***ark
Sic Schottky Diode, 1.2Kv, 87A, To-247; Product Range:thinq 5G 1200V Series; Diode Configuration:dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:87A; Total Capacitive Charge Qc:154Nc; Rohs Compliant: Yes
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
Teil # Mfg. Beschreibung Aktie Preis
IDW30G120C5BFKSA1
DISTI # V99:2348_06377184		Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		270
  • 500:$13.8900
  • 250:$14.4700
  • 100:$15.2100
  • 25:$16.8800
  • 10:$17.7100
  • 5:$18.9800
  • 1:$19.3500
IDW30G120C5BFKSA1
DISTI # IDW30G120C5BFKSA1-ND		Infineon Technologies AGDIODE GEN PURP 1200V 44A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		615In Stock
  • 240:$17.2950
  • 10:$20.2530
  • 1:$21.9600
IDW30G120C5BFKSA1
DISTI # 27089105		Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		270
  • 250:$14.4700
  • 100:$15.2100
  • 25:$16.8800
  • 10:$17.7100
  • 5:$18.9800
  • 1:$19.3500
IDW30G120C5BFKSA1
DISTI # IDW30G120C5BFKSA1		Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin TO-247 Tube - Rail/Tube (Alt: IDW30G120C5BFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$15.5900
  • 480:$14.9900
  • 960:$14.4900
  • 1440:$13.9900
  • 2400:$13.6900
IDW30G120C5BFKSA1
DISTI # SP001123716		Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin TO-247 Tube (Alt: SP001123716)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€16.6900
  • 10:€15.2900
  • 25:€14.6900
  • 50:€14.0900
  • 100:€13.5900
  • 500:€13.0900
  • 1000:€12.1900
IDW30G120C5BFKSA1
DISTI # IDW30G120C5B		Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin TO-247 Tube (Alt: IDW30G120C5B)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
  • 240:$15.4807
  • 480:$14.8445
  • 720:$14.6439
  • 1200:$14.0734
  • 2400:$13.8930
  • 6000:$13.5456
  • 12000:$13.2152
IDW30G120C5BFKSA1
DISTI # 34AC1591		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247,Product Range:thinQ 5G 1200V Series,Diode Configuration:Dual Common Cathode,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:87A,Total Capacitive Charge Qc:154nC,, RoHS Compliant: Yes189
  • 1:$20.9200
  • 5:$20.7000
  • 10:$19.2900
  • 25:$18.4300
  • 50:$17.4600
  • 100:$16.4800
  • 250:$15.7200
IDW30G120C5BFKSA1
DISTI # IDW30G120C5BFKSA1		Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,1.2kV,2x15A,332W,Ir:17uA12
  • 1:$35.6100
  • 3:$30.6900
  • 10:$24.6100
IDW30G120C5BFKSA1
DISTI # IDW30G120C5B		Infineon Technologies AGSiC-Schottky 1200V 30A(2x15) TO247
RoHS: Compliant		30
  • 1:€17.9000
  • 25:€14.9000
  • 100:€13.4000
  • 200:€12.9000
IDW30G120C5BFKSA1
DISTI # 2780809		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247
RoHS: Compliant		252
  • 1:£16.1400
  • 5:£15.9700
  • 10:£14.2300
  • 50:£13.4800
  • 100:£12.7200
IDW30G120C5BFKSA1
DISTI # 2780809		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247
RoHS: Compliant		189
  • 1:$27.6600
  • 5:$27.1400
  • 10:$25.6900
  • 50:$24.8000
  • 100:$23.9700
  • 250:$23.5800
IDW30G120C5BFKSA1
DISTI # C1S322000567319		Infineon Technologies AGRectifier Diodes
RoHS: Compliant		270
  • 240:$15.7800
  • 10:$18.0300
  • 1:$19.3200
Bild Teil # Beschreibung
IDW30G120C5B

Mfr.#: IDW30G120C5B

OMO.#: OMO-IDW30G120C5B-1190

 SiC-D 1200V 30A 1,4V TO247-3
IDW30G120C5B D3012B5

Mfr.#: IDW30G120C5B D3012B5

OMO.#: OMO-IDW30G120C5B-D3012B5-1190

 Neu und Original
IDW30G120C5BFKSA1

Mfr.#: IDW30G120C5BFKSA1

OMO.#: OMO-IDW30G120C5BFKSA1-INFINEON-TECHNOLOGIES

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IDW30G120C5BFKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
14,68 $
14,68 $
10
13,95 $
139,51 $
100
13,22 $
1 321,65 $
500
12,48 $
6 241,15 $
1000
11,75 $
11 748,00 $
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