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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUK657400B | Philips Semiconductors | Power Field-Effect Transistor, 11A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 1740 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BUK653R2-55C,127 |
MOSFET N-CH 55V 120A TO220AB |
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Mfr.#: BUK655R0-75C,127 |
MOSFET N-CH 75V 120A TO220AB |
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Mfr.#: BUK6510-75C127 OMO.#: OMO-BUK6510-75C127-1190 |
Now Nexperia BUK6510-75C - Power Field-Effect Transistor, 77A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK652R3-40C127 OMO.#: OMO-BUK652R3-40C127-1190 |
Now Nexperia BUK652R3-40C - Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK653R4-40C127 OMO.#: OMO-BUK653R4-40C127-1190 |
- Bulk (Alt: BUK653R4-40C127) |
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Mfr.#: BUK653R7-30C127 OMO.#: OMO-BUK653R7-30C127-1190 |
Now Nexperia BUK653R7-30C - Power Field-Effect Transistor, 100A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK655-400A OMO.#: OMO-BUK655-400A-1190 |
Neu und Original |
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Mfr.#: BUK657-500C OMO.#: OMO-BUK657-500C-1190 |
Neu und Original |
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Mfr.#: BUK6507-75C,127 OMO.#: OMO-BUK6507-75C-127-NEXPERIA |
IGBT Transistors MOSFET N-CHAN 75V 100A |
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Mfr.#: BUK653R3-30C,127 |
RF Bipolar Transistors MOSFET N-Chan 30V 100A |