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IRF6616TR1PBF

IRF6616TR1PBF
Mfr. #:
IRF6616TR1PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 40V 106A 5.0mOhm 29nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6616TR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6616TR1PBF DatasheetIRF6616TR1PBF Datasheet (P4-P6)IRF6616TR1PBF Datasheet (P7-P9)IRF6616TR1PBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-MX
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
19 A
Rds On - Drain-Source-Widerstand:
6.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Pd - Verlustleistung:
89 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Breite:
5.05 mm
Marke:
Infineon / IR
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001526896
Tags
IRF6616T, IRF6616, IRF661, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, N-Ch, VDSS 40V, RDS(ON) 3.7 mOhm, ID 19A, DirectFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):6.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
***ment14 APAC
MOSFET, N, DIRECTFET, 40V, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.8mW; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Base Number:6616; Current Id Max:15A; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:150A; SMD Marking:2.8; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
Teil # Mfg. Beschreibung Aktie Preis
IRF6616TR1PBF
DISTI # IRF6616TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 40V 19A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6616TR1PBF
    DISTI # IRF6616TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 40V 19A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6616TR1PBF
      DISTI # IRF6616TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 40V 19A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6616TR1PBF
        DISTI # 70018826        		Infineon Technologies AGMOSFET,N-Ch,VDSS 40V,RDS(ON) 3.7 mOhm,ID 19A,DirectFET
        RoHS: Compliant        		0
        • 1000:$1.8400
        • 2000:$1.6700
        IRF6616TR1PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***640
        • 515:$3.5340
        • 230:$3.8874
        • 1:$7.0680
        IRF6616TR1PBF
        DISTI # 1436913        		Infineon Technologies AG 
        RoHS: Compliant        		0
        • 1000:$2.5200
        • 500:$2.7100
        • 250:$3.0600
        • 100:$3.4200
        • 10:$4.2300
        • 1:$5.1400
        Bild Teil # Beschreibung
        IRF6614TRPBF

        Mfr.#: IRF6614TRPBF

        OMO.#: OMO-IRF6614TRPBF

        		 MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs
        IRF6616TRPBF

        Mfr.#: IRF6616TRPBF

        OMO.#: OMO-IRF6616TRPBF

        		 MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
        IRF6611

        Mfr.#: IRF6611

        OMO.#: OMO-IRF6611

        		 MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
        IRF6614

        Mfr.#: IRF6614

        OMO.#: OMO-IRF6614-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V DIRECTFET-ST
        IRF6616TR1PBF

        Mfr.#: IRF6616TR1PBF

        OMO.#: OMO-IRF6616TR1PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 19A DIRECTFET
        IRF6611TR1PBF

        Mfr.#: IRF6611TR1PBF

        OMO.#: OMO-IRF6611TR1PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 32A DIRECTFET
        IRF6612TRPBF.

        Mfr.#: IRF6612TRPBF.

        OMO.#: OMO-IRF6612TRPBF--1190

        		 Neu und Original
        IRF6617TR1

        Mfr.#: IRF6617TR1

        OMO.#: OMO-IRF6617TR1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 14A DIRECTFET
        IRF6617TRPBF.

        Mfr.#: IRF6617TRPBF.

        OMO.#: OMO-IRF6617TRPBF--1190

        		 Transistor Polarity:N Channel, Continuous Drain Current Id:14A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0062ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.35V, Power Di
        IRF6618TRPBF

        Mfr.#: IRF6618TRPBF

        OMO.#: OMO-IRF6618TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von IRF6616TR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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