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IRF9332TRPBF

IRF9332TRPBF
Mfr. #:
IRF9332TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT PCh -30V -9.8A 54mOhm -2.5V cpbl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF9332TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF9332TRPBF DatasheetIRF9332TRPBF Datasheet (P4-P6)IRF9332TRPBF Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
IRF9332TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
9.8 A
Rds On - Drain-Source-Widerstand:
28.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
14 nC
Pd - Verlustleistung:
2.5 W
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001565710
Gewichtseinheit:
0.019048 oz
Tags
IRF933, IRF93, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
*** Stop Electro
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***Yang
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
***ure Electronics
N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***-Wing Technology
ON SEMICONDUCTOR - FDS6690A - Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ure Electronics
N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***(Formerly Allied Electronics)
SI4410DYPBF N-channel MOSFET Transistor; 10 A; 30 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1V
***nell
MOSFET, N LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 10A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 50A; SMD Marking: SI4410DY; Termination Type: Surface Mount Device; Voltage Vgs th Min: 1V
***i-Key
MOSFET N-CH 30V 10A 8-SOIC
***S
French Electronic Distributor since 1988
***el Electronic
RES 13.7K OHM 1/10W 1% 0603
***ser
MOSFETs 30V N-Ch. FET
*** Source Electronics
Trans MOSFET P-CH Si 30V 11A 8-Pin SOIC N T/R / Ultra Low On-Resistance
*** Electronics
P-channel MOSFET Transistor, 11 A 30 V, 8-Pin SOIC
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -11A, 13.5 mOhm, 75 nC Qg, SO-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
***ure Electronics
Single P-Channel 30 V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet, P, So-8; Transistor Polarity:p Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0135Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:2.5W Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF9332TRPBF
DISTI # 31271640		Infineon Technologies AGTrans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R4000
  • 4000:$0.2016
IRF9332TRPBF
DISTI # 31274813		Infineon Technologies AGTrans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R4000
  • 33:$0.2522
IRF9332TRPBF
DISTI # IRF9332TRPBF-ND		Infineon Technologies AGMOSFET P-CH 30V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.3091
IRF9332TRPBF
DISTI # V72:2272_13889776		Infineon Technologies AGTrans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R4000
  • 1:$0.2522
IRF9332TRPBF
DISTI # IRF9332TRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: IRF9332TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2229
  • 8000:$0.2149
  • 16000:$0.2069
  • 24000:$0.1999
  • 40000:$0.1959
IRF9332TRPBF
DISTI # SP001565710		Infineon Technologies AGTrans MOSFET P-CH 30V 9.8A 8-Pin SOIC N T/R (Alt: SP001565710)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2909
  • 8000:€0.2379
  • 16000:€0.2179
  • 24000:€0.2009
  • 40000:€0.1869
IRF9332TRPBF
DISTI # 06AC1446		Infineon Technologies AGMOSFET, P-CH, -30V, -9.8A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0136ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.9V,Power , RoHS Compliant: Yes274
  • 1:$0.7300
  • 10:$0.6010
  • 25:$0.5300
  • 50:$0.4590
  • 100:$0.3880
  • 250:$0.3620
  • 500:$0.3370
  • 1000:$0.3110
IRF9332TRPBF
DISTI # 942-IRF9332TRPBF		Infineon Technologies AGMOSFET MOSFT PCh -30V -9.8A 54mOhm -2.5V cpbl
RoHS: Compliant		0
  • 1:$0.7300
  • 10:$0.6010
  • 100:$0.3880
  • 1000:$0.3110
  • 4000:$0.2620
IRF9332TRPBF
DISTI # 2687600		Infineon Technologies AGMOSFET, P-CH, -30V, -9.8A, SOIC-8
RoHS: Compliant		274
  • 1:$0.9660
  • 10:$0.8420
  • 100:$0.6870
IRF9332TRPBF
DISTI # XSLY00000000880		INFINEON/IRSO-8
RoHS: Compliant		4000
  • 4000:$0.3257
IRF9332TRPBF
DISTI # 2687600		Infineon Technologies AGMOSFET, P-CH, -30V, -9.8A, SOIC-8
RoHS: Compliant		472
  • 5:£0.5810
  • 25:£0.5280
  • 100:£0.3330
  • 250:£0.2970
  • 500:£0.2600
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TLV74318PDBVR

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M80-8530842

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M80-8530442

Mfr.#: M80-8530442

OMO.#: OMO-M80-8530442

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Mfr.#: M80-8880405

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IS25LP256D-JLLE

Mfr.#: IS25LP256D-JLLE

OMO.#: OMO-IS25LP256D-JLLE-INTEGRATED-SILICON-SOLUTION

 Flash Memory 256M 3V 166MHZ Serial Flash
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ASEMPHC-100.000MHZ-LR-T

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von IRF9332TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,72 $
0,72 $
10
0,60 $
6,01 $
100
0,39 $
38,80 $
1000
0,31 $
311,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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