RN1102MFV,L3F

RN1102MFV,L3F
Mfr. #:
RN1102MFV,L3F
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RN1102MFV,L3F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
10 kOhms
Typisches Widerstandsverhältnis:
1
Montageart:
SMD/SMT
Paket / Koffer:
SOT-723
DC-Kollektor/Basisverstärkung hfe Min:
30
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
100 mA
Pd - Verlustleistung:
150 mW
Serie:
RN1102
Verpackung:
Spule
Emitter- Basisspannung VEBO:
10 V
Marke:
Toshiba
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
8000
Unterkategorie:
Transistoren
Tags
RN1102M, RN1102, RN110, RN11, RN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R
***el Electronic
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***
TRANSISTOR PD=150MW F=1MHZ
Teil # Mfg. Beschreibung Aktie Preis
RN1102MFV,L3F
DISTI # V36:1790_13893397
Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin VESM72000
  • 96000:$0.0217
  • 48000:$0.0236
  • 24000:$0.0261
  • 8000:$0.0281
RN1102MFV,L3F
DISTI # V72:2272_13893397
Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin VESM764
  • 500:$0.0443
  • 250:$0.0638
  • 100:$0.0645
  • 25:$0.1555
  • 10:$0.1570
  • 1:$0.2470
RN1102MFV,L3F
DISTI # RN1102MFVL3FCT-ND
Toshiba America Electronic ComponentsTRANS PREBIAS NPN 50V 0.15W VESM
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
15194In Stock
  • 2500:$0.0448
  • 1000:$0.0496
  • 500:$0.0730
  • 250:$0.0856
  • 100:$0.1363
  • 25:$0.1752
  • 10:$0.2430
  • 1:$0.2700
RN1102MFV,L3F
DISTI # RN1102MFVL3FDKR-ND
Toshiba America Electronic ComponentsTRANS PREBIAS NPN 50V 0.15W VESM
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
15194In Stock
  • 2500:$0.0448
  • 1000:$0.0496
  • 500:$0.0730
  • 250:$0.0856
  • 100:$0.1363
  • 25:$0.1752
  • 10:$0.2430
  • 1:$0.2700
RN1102MFV,L3F
DISTI # RN1102MFVL3FTR-ND
Toshiba America Electronic ComponentsTRANS PREBIAS NPN 50V 0.15W VESM
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)
8000In Stock
  • 56000:$0.0284
  • 24000:$0.0302
  • 16000:$0.0321
  • 8000:$0.0378
RN1102MFV,L3F
DISTI # 31029010
Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin VESM72000
  • 48000:$0.0236
  • 24000:$0.0261
  • 8000:$0.0281
RN1102MFV,L3F
DISTI # 30605753
Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin VESM18758
  • 1000:$0.0376
  • 500:$0.0382
  • 363:$0.0397
RN1102MFV,L3F(B
DISTI # 30602666
Toshiba America Electronic ComponentsRN1102MFV,L3F(B3760
  • 1000:$0.0390
  • 500:$0.0478
  • 200:$0.0664
  • 130:$0.0820
RN1102MFV,L3F
DISTI # 25804577
Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin VESM764
  • 500:$0.0441
  • 251:$0.0638
RN1102MFV,L3F
DISTI # RN1102MFV,L3F
Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: RN1102MFV,L3F)
RoHS: Compliant
Min Qty: 8000
Container: Reel
Americas - 24000
  • 8000:$0.0282
  • 16000:$0.0266
  • 32000:$0.0250
  • 48000:$0.0237
  • 80000:$0.0231
RN1102MFV,L3F
DISTI # 757-RN1102MFVL3F
Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RoHS: Compliant
15178
  • 1:$0.2600
  • 10:$0.1670
  • 100:$0.0700
  • 1000:$0.0480
  • 2500:$0.0360
  • 8000:$0.0310
  • 24000:$0.0290
  • 48000:$0.0270
  • 96000:$0.0240
RN1102MFV,L3F
DISTI # C1S751201163246
Toshiba America Electronic ComponentsPre-Biased BJT72000
  • 48000:$0.0236
  • 24000:$0.0261
  • 8000:$0.0281
RN1102MFV,L3F
DISTI # C1S751201139355
Toshiba America Electronic ComponentsPre-Biased BJT18758
  • 8000:$0.0263
  • 1000:$0.0295
  • 500:$0.0300
  • 200:$0.0311
  • 100:$0.0356
  • 50:$0.0552
RN1102MFV,L3F(B
DISTI # C1S751201032520
Toshiba America Electronic ComponentsPre-Biased BJT3760
  • 1000:$0.0306
  • 500:$0.0375
  • 200:$0.0521
  • 100:$0.0643
  • 50:$0.1550
RN1102MFV,L3FToshiba America Electronic ComponentsBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RoHS: Compliant
Americas -
    RN1102MFVL3FToshiba America Electronic ComponentsBipolar Transistors - Pre-Biased TRANSISTOR PD=150MW F=1MHZ
    RoHS: Compliant
    Americas -
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      Neu und Original
      Verfügbarkeit
      Aktie:
      11
      Auf Bestellung:
      1994
      Menge eingeben:
      Der aktuelle Preis von RN1102MFV,L3F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,26 $
      0,26 $
      10
      0,17 $
      1,67 $
      100
      0,07 $
      7,00 $
      1000
      0,05 $
      48,00 $
      2500
      0,04 $
      90,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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