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IXFN48N60P

IXFN48N60P
Mfr. #:
IXFN48N60P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 600V 48A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN48N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN48N60P DatasheetIXFN48N60P Datasheet (P4)
ECAD Model:
Mehr Informationen:
IXFN48N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
140 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
625 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
9.6 mm
Länge:
38.23 mm
Serie:
IXFN48N60
Transistortyp:
1 N-Channel
Breite:
25.42 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
53 S
Abfallzeit:
22 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
85 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN48, IXFN4, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 40A 4-Pin SOT-227B
***inecomponents.com
MOSFETs w/Fast Intrinsic Diode
***ark
Mosfet Module, N-Ch, 600V, 40A, Sot-227B; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.14Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFN48N60P
DISTI # V99:2348_15877410		IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant		320
  • 200:$13.7000
  • 100:$14.2000
  • 50:$15.7800
  • 25:$17.1600
  • 10:$18.2900
  • 5:$19.1600
  • 1:$20.1600
IXFN48N60P
DISTI # V36:1790_15877410		IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant		0
  • 5000:$12.2700
  • 1000:$14.3400
  • 100:$19.3200
  • 10:$20.2400
IXFN48N60P
DISTI # IXFN48N60P-ND		IXYS CorporationMOSFET N-CH 600V 40A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube		4In Stock
  • 500:$13.9656
  • 100:$15.9896
  • 30:$17.2040
  • 10:$18.7220
  • 1:$20.2400
IXFN48N60P
DISTI # 32034231		IXYS CorporationTrans MOSFET N-CH 600V 40A 4-Pin SOT-227B
RoHS: Compliant		320
  • 1:$20.1600
IXFN48N60P
DISTI # 02AC9814		IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power RoHS Compliant: Yes0
  • 250:$14.8200
  • 100:$16.1500
  • 50:$16.6300
  • 25:$17.3800
  • 10:$18.9100
  • 5:$19.4200
  • 1:$20.4400
IXFN48N60P
DISTI # 747-IXFN48N60P		IXYS CorporationMOSFET 600V 48A
RoHS: Compliant		55
  • 1:$20.2400
  • 5:$19.2300
  • 10:$18.7200
  • 25:$17.2100
  • 50:$16.4700
  • 100:$15.9900
  • 200:$14.6700
  • 500:$13.9700
IXFN48N60P
DISTI # 194473		IXYS CorporationMOSFET N-CHANNEL 600V 40A SOT227B, EA22
  • 5:£17.3900
  • 1:£18.8300
IXFN48N60P
DISTI # 194473P		IXYS CorporationMOSFET N-CHANNEL 600V 40A SOT227B, TU69
  • 5:£17.3900
IXFN48N60P
DISTI # 2674761		IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B
RoHS: Compliant		0
  • 100:$24.1000
  • 30:$25.9300
  • 10:$28.2200
  • 1:$30.5000
IXFN48N60P
DISTI # 2674761		IXYS CorporationMOSFET MODULE, N-CH, 600V, 40A, SOT-227B
RoHS: Compliant		0
  • 100:£11.6400
  • 50:£13.0600
  • 10:£13.6600
  • 5:£15.2600
  • 1:£16.0700
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Verfügbarkeit
Aktie:
55
Auf Bestellung:
2038
Menge eingeben:
Der aktuelle Preis von IXFN48N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
20,24 $
20,24 $
5
19,23 $
96,15 $
10
18,72 $
187,20 $
25
17,21 $
430,25 $
50
16,47 $
823,50 $
100
15,99 $
1 599,00 $
200
14,67 $
2 934,00 $
500
13,97 $
6 985,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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