HGTG18N120BND

Mfr. #:: HGTG18N120BND
Hersteller:: ON Semiconductor
Beschreibung:: IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: HGTG18N120BND Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Fairchild Semiconductor

Produktkategorie: IGBTs - Single

Serie: -

Verpackung: Rohr

Teil-Aliasnamen: HGTG18N120BND_NL

Gewichtseinheit: 0.225401 oz

Montageart: Durchgangsloch

Paket-Koffer: TO-247-3

Eingabetyp: Standard

Befestigungsart: Durchgangsloch

Lieferanten-Geräte-Paket: TO-247

Aufbau: Single

Leistung max: 390W

Reverse-Recovery-Time-trr: 75ns

Strom-Kollektor-Ic-Max: 54A

Spannungs-Kollektor-Emitter-Breakdown-Max: 1200V

IGBT-Typ: NPT

Strom-Kollektor-gepulster-Icm: 160A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 18A

Schaltenergie: 1.9mJ (on), 1.8mJ (off)

Gate-Gebühr: 165nC

Td-ein-aus-25°C: 23ns/170ns

Testbedingung: 960V, 18A, 3 Ohm, 15V

Pd-Verlustleistung: 390 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Kollektor-Emitter-Spannung-VCEO-Max: 1200 V

Kollektor-Emitter-Sättigungsspannung: 2.45 V

Kontinuierlicher Kollektorstrom-bei-25-C: 54 A

Gate-Emitter-Leckstrom: +/- 250 nA

Maximale Gate-Emitter-Spannung: +/- 20 V

Kontinuierlicher Kollektor-Strom-Ic-Max: 54 A

Tags: HGTG18N120BND, HGTG18N120B, HGTG18, HGTG1, HGTG, HGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG18N120BND Beschreibung

***Components: In a Tube of 30, ON Semiconductor HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247

***ical: Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247

***inecomponents.com: 54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast Diode

***i-Key: IGBT NPT N-CHAN 1200V 54A TO-247

***eco: ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ

***ser: IGBTs 36A, 1200V, N-Ch

***Semiconductor: IGBT, 1200V, NPT

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.45V; Power Dissipation, Pd:390W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes

***rchild Semiconductor: HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:390W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:18A; Current, Icm Pulsed:160A; Device Marking:HGTG18N120BND; Power, Pd:390W; Time, Rise:22ns

***ment14 APAC: IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
HGTG18N120BND DISTI # HGTG18N120BND-ND	ON Semiconductor	IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	1350:$3.6624 900:$4.2050 450:$4.6119 10:$5.8330 1:$6.4600
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 50 Container: Tube	Americas - 450
HGTG18N120BND DISTI # 58K8901	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$5.6400 900:$5.1600
HGTG18N120BND DISTI # 58K8901	ON Semiconductor	SINGLE IGBT, 1.2KV, 54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	0	1:$7.7100 10:$7.0000 25:$6.6800 50:$6.2500 100:$5.8200 250:$5.5800 500:$5.1000
HGTG18N120BND DISTI # 97K1398	ON Semiconductor	IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	0	1:$6.5500 10:$5.9500 25:$5.6800 50:$5.3300 100:$4.9700 250:$4.7600 500:$4.3600
HGTG18N120BND DISTI # 512-HGTG18N120BND	ON Semiconductor	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS: Compliant	436	1:$6.1500 10:$5.5600 25:$5.3000 100:$4.6000 250:$4.4000
HGTG18N120BND DISTI # 9034285P	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, TU	14	15:£4.6500 30:£4.4300 100:£3.8400 300:£3.6800
HGTG18N120BND DISTI # 9034285	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, EA	58	1:£5.1400 15:£4.6500 30:£4.4300 100:£3.8400 300:£3.6800
HGTG18N120BND	Fairchild Semiconductor Corporation	INSTOCK	62
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247 RoHS: Compliant	9	1:$9.7400 10:$8.8000 25:$8.3900 100:$7.2800 250:$6.9700
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247 RoHS: Compliant	757	1:£5.2700 5:£4.7800 10:£4.1300 50:£3.8600 100:£3.5800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN	IGBT Transistors 54A 1200V N-Ch
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND-ON-SEMICONDUCTOR	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120 OMO.#: OMO-HGTG18N120-1190	Neu und Original
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN-ON-SEMICONDUCTOR	IGBT 1200V 54A 390W TO247
	Mfr.#: HGTG18N120BND,18N120BND OMO.#: OMO-HGTG18N120BND-18N120BND-1190	Neu und Original
	Mfr.#: HGTG18N120BND,18N120BND, OMO.#: OMO-HGTG18N120BND-18N120BND--1190	Neu und Original
	Mfr.#: HGTG18N120BND,18N120BND,18N120, OMO.#: OMO-HGTG18N120BND-18N120BND-18N120--1190	Neu und Original
	Mfr.#: HGTG18N120BND-NL OMO.#: OMO-HGTG18N120BND-NL-1190	Neu und Original
	Mfr.#: HGTG18N120BN G18N120BN OMO.#: OMO-HGTG18N120BN-G18N120BN-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von HGTG18N120BND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,77 $~~; ~~2,77 $~~

10: ~~2,63 $~~; ~~26,28 $~~

100: ~~2,49 $~~; ~~248,94 $~~

500: ~~2,35 $~~; ~~1 175,55 $~~

1000: ~~2,21 $~~; ~~2 212,80 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

HGTG18N120BND

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes