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IPP028N08N3 G

IPP028N08N3 G
Mfr. #:
IPP028N08N3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP028N08N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
2.8 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
73 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
86 ns
Typische Einschaltverzögerungszeit:
28 ns
Teil # Aliase:
IPP028N08N3GXKSA1 IPP28N8N3GXK SP000680766
Gewichtseinheit:
0.211644 oz
Tags
IPP028N08N3G, IPP028, IPP02, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPP028N08N3GXKSA1
DISTI # IPP028N08N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$2.9134
  • 500:$3.4544
  • 100:$4.2660
  • 10:$5.2020
  • 1:$5.8300
IPP028N08N3GHKSA1
DISTI # IPP028N08N3GXKSA1		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP028N08N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$2.6900
  • 1000:$2.5900
  • 2000:$2.4900
  • 3000:$2.3900
  • 5000:$2.3900
IPP028N08N3GHKSA1
DISTI # SP000680766		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 (Alt: SP000680766)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.3900
  • 10:€2.3900
  • 25:€2.2900
  • 50:€2.1900
  • 100:€2.1900
  • 500:€2.1900
  • 1000:€2.0900
IPP028N08N3GXKSA1
DISTI # 60R2728		Infineon Technologies AGMOSFET, N CH, 100A, 80V, PG-TO220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):2.4mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power , RoHS Compliant: Yes0
  • 1:$4.4500
  • 10:$3.8500
  • 25:$3.3700
  • 50:$3.1600
  • 100:$2.7400
  • 250:$2.3000
  • 500:$2.2300
IPP028N08N3GHKSA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Not Compliant		20
  • 1000:$2.4400
  • 500:$2.5700
  • 100:$2.6800
  • 25:$2.7900
  • 1:$3.0100
IPP028N08N3 G
DISTI # 726-IPP028N08N3G		Infineon Technologies AGMOSFET N-Ch 80V 100A TO220-3 OptiMOS 3
RoHS: Compliant		0
  • 1:$5.0100
  • 10:$4.2600
  • 100:$3.6900
  • 250:$3.5100
  • 500:$3.1500
IPP028N08N3GHKSA1
DISTI # 726-IPP028N08N3GHKSA		Infineon Technologies AGMOSFET N-Ch 80V 100A TO220-3
RoHS: Compliant		0
    IPP028N08N3GInfineon Technologies AG100 A, 80 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB25
    • 5:$4.5000
    • 2:$6.0000
    • 1:$9.0000
    IPP028N08N3GXKSA1
    DISTI # IPP028N08N3GXKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,80V,100A,300W,PG-TO220-372
    • 1:$2.8000
    • 3:$2.4067
    • 10:$1.9230
    • 100:$1.6845
    • 500:$1.5686
    IPP028N08N3GXKSA1
    DISTI # 1775614    		Infineon Technologies AGMOSFET, N CH, 100A, 80V, PG-TO220-3
    RoHS: Compliant    		72
    • 1:£6.1600
    • 10:£4.9700
    • 100:£4.0800
    Bild Teil # Beschreibung
    IPP028N08N3 G

    Mfr.#: IPP028N08N3 G

    OMO.#: OMO-IPP028N08N3-G

    		 MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3
    IPP028N08N3GXKSA1

    Mfr.#: IPP028N08N3GXKSA1

    OMO.#: OMO-IPP028N08N3GXKSA1

    		 MOSFET MV POWER MOS
    IPP028N08N3

    Mfr.#: IPP028N08N3

    OMO.#: OMO-IPP028N08N3-1190

    		 Neu und Original
    IPP028N08N3G

    Mfr.#: IPP028N08N3G

    OMO.#: OMO-IPP028N08N3G-1190

    		 100 A, 80 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    IPP028N08N3GXKSA1

    Mfr.#: IPP028N08N3GXKSA1

    OMO.#: OMO-IPP028N08N3GXKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 80V 100A TO220-3
    IPP028N08N3 G

    Mfr.#: IPP028N08N3 G

    OMO.#: OMO-IPP028N08N3-G-124

    		 Darlington Transistors MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3
    IPP028N08N3GHKSA1

    Mfr.#: IPP028N08N3GHKSA1

    OMO.#: OMO-IPP028N08N3GHKSA1-128

    		 MOSFET N-Ch 80V 100A TO220-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von IPP028N08N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,00 $
    5,00 $
    10
    4,25 $
    42,50 $
    100
    3,69 $
    369,00 $
    250
    3,50 $
    875,00 $
    500
    3,14 $
    1 570,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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