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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMV24N25G DISTI # FE0000000001095 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 24A I(D),250V,0.13ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| FMV24N25G-S25PP-P DISTI # FE0000000004801 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV24N25G-P DISTI # FE0000000004800 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMV20N50E OMO.#: OMO-FMV20N50E-1190 |
Neu und Original |
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Mfr.#: FMV20N50E,FMV10N60S1, |
Neu und Original |
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Mfr.#: FMV20N50EHF-S25PP OMO.#: OMO-FMV20N50EHF-S25PP-1190 |
Neu und Original |
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Mfr.#: FMV20N60S1 OMO.#: OMO-FMV20N60S1-1190 |
MOSFET, N CHANNEL, 600V, 20A, TO-220F-3, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.161ohm, Rds(on) Test Voltage Vgs:10 |
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Mfr.#: FMV20N60S1HF OMO.#: OMO-FMV20N60S1HF-1190 |
Neu und Original |
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Mfr.#: FMV21N50ES OMO.#: OMO-FMV21N50ES-1190 |
Power Field-Effect Transistor, 21A I(D),500V,0.27ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMV22R OMO.#: OMO-FMV22R-1190 |
Neu und Original |
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Mfr.#: FMV23N50E-S25PP OMO.#: OMO-FMV23N50E-S25PP-1190 |
Neu und Original |
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Mfr.#: FMV23N50ES OMO.#: OMO-FMV23N50ES-1190 |
Power Field-Effect Transistor, 23A I(D),500V,0.245ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: FMV26S OMO.#: OMO-FMV26S-1190 |
Neu und Original |