FDMC86248

FDMC86248
Mfr. #:
FDMC86248
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET N-Channel MOSFET 600V, 3.8A, 2.5Ohm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC86248 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMC86248 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
3.4 A
Rds On - Drain-Source-Widerstand:
90 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
3.7 nC, 6.4 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.3 W
Aufbau:
Single
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMC86248
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
10 S
Abfallzeit:
2.8 ns
Produktart:
MOSFET
Anstiegszeit:
1.4 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11 ns
Typische Einschaltverzögerungszeit:
6.9 ns
Gewichtseinheit:
0.001133 oz
Tags
FDMC8624, FDMC862, FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curre
***emi
N-Channel Power Trench® MOSFET 150V, 13A, 90mΩ
***el Electronic
FAIRCHILD SEMICONDUCTOR FDMC86248 MOSFET Transistor, N Channel, 13 A, 150 V, 0.069 ohm, 10 V, 3.2 V
***r Electronics
Power Field-Effect Transistor, 3.4A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDMC86248
DISTI # V36:1790_06337916
ON SemiconductorPT5 150V/20V NCH POWER TRENCH0
    FDMC86248
    DISTI # FDMC86248CT-ND
    ON SemiconductorMOSFET N CH 150V 3.4A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      FDMC86248
      DISTI # FDMC86248DKR-ND
      ON SemiconductorMOSFET N CH 150V 3.4A POWER33
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        FDMC86248
        DISTI # FDMC86248TR-ND
        ON SemiconductorMOSFET N CH 150V 3.4A POWER33
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape & Reel (TR)
        Temporarily Out of Stock
        • 3000:$0.9355
        FDMC86248
        DISTI # FDMC86248
        ON SemiconductorTrans MOSFET N-CH 150V 3.4A 8-Pin Power 33 T/R (Alt: FDMC86248)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel
        Asia - 0
        • 150000:$1.0820
        • 75000:$1.1000
        • 30000:$1.1379
        • 15000:$1.1786
        • 9000:$1.2222
        • 6000:$1.2692
        • 3000:$1.3200
        FDMC86248
        DISTI # FDMC86248
        ON SemiconductorTrans MOSFET N-CH 150V 3.4A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86248)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel
        Americas - 0
        • 30000:$0.8139
        • 18000:$0.8349
        • 12000:$0.8459
        • 6000:$0.8569
        • 3000:$0.8619
        FDMC86248
        DISTI # 512-FDMC86248
        ON SemiconductorMOSFET N-Channel MOSFET 600V, 3.8A, 2.5Ohm
        RoHS: Compliant
        2764
        • 1:$1.9400
        • 10:$1.6500
        • 100:$1.3200
        • 500:$1.1500
        • 1000:$0.9570
        • 3000:$0.8920
        • 6000:$0.8590
        • 9000:$0.8250
        FDMC86248Fairchild Semiconductor Corporation 1885
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          Verfügbarkeit
          Aktie:
          54
          Auf Bestellung:
          2037
          Menge eingeben:
          Der aktuelle Preis von FDMC86248 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,94 $
          1,94 $
          10
          1,65 $
          16,50 $
          100
          1,32 $
          132,00 $
          500
          1,15 $
          575,00 $
          1000
          0,96 $
          957,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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