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IPB80N06S208ATMA2

IPB80N06S208ATMA2
Mfr. #:
IPB80N06S208ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 55V 80A TO263-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB80N06S208ATMA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB80N06S208ATMA2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
IPB80N06S2-08 SP001067884
Paket-Koffer
TO-263-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Transistor-Polarität
N-Kanal
Tags
IPB80N06S20, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S208ATMA1
***ical
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R
***ronik
MOSFET 40V 7.7mOHM AECQ TO263
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Teil # Mfg. Beschreibung Aktie Preis
IPB80N06S208ATMA2
DISTI # IPB80N06S208ATMA2-ND		Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.3584
IPB80N06S208ATMA2
DISTI # IPB80N06S208ATMA2		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S208ATMA2)
RoHS: Compliant
Min Qty: 439
Container: Bulk		Americas - 0
  • 4390:$0.7243
  • 2195:$0.7374
  • 880:$0.7631
  • 441:$0.7917
  • 439:$0.8213
IPB80N06S208ATMA2
DISTI # IPB80N06S208ATMA2		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S208ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.1903
  • 6000:$1.2119
  • 4000:$1.2541
  • 2000:$1.3011
  • 1000:$1.3499
IPB80N06S208ATMA2
DISTI # 726-IPB80N06S208ATMA		Infineon Technologies AGMOSFET N-CHANNEL_55/60V546
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.2400
  • 500:$1.0800
  • 1000:$0.8920
  • 2000:$0.8310
  • 5000:$0.8000
  • 10000:$0.7690
IPB80N06S208ATMA2Infineon Technologies AGOptlMOS N-Channel Power MOSFET
RoHS: Compliant		2000
  • 1000:$0.7500
  • 500:$0.7900
  • 100:$0.8300
  • 25:$0.8600
  • 1:$0.9300
Bild Teil # Beschreibung
IPB80N06S209ATMA2

Mfr.#: IPB80N06S209ATMA2

OMO.#: OMO-IPB80N06S209ATMA2

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IPB80N06S2L11ATMA1

Mfr.#: IPB80N06S2L11ATMA1

OMO.#: OMO-IPB80N06S2L11ATMA1

 MOSFET N-CHANNEL_55/60V
IPB80N06S4L05ATMA2

Mfr.#: IPB80N06S4L05ATMA2

OMO.#: OMO-IPB80N06S4L05ATMA2-INFINEON-TECHNOLOGIES

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IPB80N06S405ATMA1

Mfr.#: IPB80N06S405ATMA1

OMO.#: OMO-IPB80N06S405ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 80A TO263-3
IPB80N06S2-09(2N0609)

Mfr.#: IPB80N06S2-09(2N0609)

OMO.#: OMO-IPB80N06S2-09-2N0609--1190

 Neu und Original
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Mfr.#: IPB80N06S2L07ATMA1

OMO.#: OMO-IPB80N06S2L07ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 80A TO263-3
IPB80N06S3L-08

Mfr.#: IPB80N06S3L-08

OMO.#: OMO-IPB80N06S3L-08-1190

 MOSFET N-Ch 55V 80A D2PAK-2
IPB80N06S2L-07

Mfr.#: IPB80N06S2L-07

OMO.#: OMO-IPB80N06S2L-07-124

 Darlington Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
IPB80N06S2-09

Mfr.#: IPB80N06S2-09

OMO.#: OMO-IPB80N06S2-09-124

 Darlington Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
IPB80N06S2-H5

Mfr.#: IPB80N06S2-H5

OMO.#: OMO-IPB80N06S2-H5-317

 RF Bipolar Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IPB80N06S208ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,09 $
1,09 $
10
1,03 $
10,32 $
100
0,98 $
97,73 $
500
0,92 $
461,50 $
1000
0,87 $
868,70 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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