OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

PSMN3R9-60PSQ

PSMN3R9-60PSQ
Mfr. #:
PSMN3R9-60PSQ
Hersteller:
Nexperia
Beschreibung:
Darlington Transistors MOSFET N-channel 60 V 3.9 mo FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PSMN3R9-60PSQ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PSMN3R9-60PSQ Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
NXP Semiconductors
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
263 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
45 ns
Anstiegszeit
41.4 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
130 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Widerstand
2.94 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
62.7 ns
Typische-Einschaltverzögerungszeit
25.3 ns
Qg-Gate-Ladung
103 nC
Kanal-Modus
Erweiterung
Tags
PSMN3R9-6, PSMN3R9, PSMN3, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 130 A, 60 V, 0.00294 Ohm, 10 V, 3 V Rohs Compliant: Yes
***peria
PSMN3R9-60PS - N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
***et
Trans MOSFET N-CH 60V 130A 3-Pin TO-220AB Rail
*** Source Electronics
MOSFET N-CH 60V SOT78
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 130A, SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00294ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 60V, 130A, SOT78; Polarità Transistor:Canale N; Corrente Continua di Drain Id:130A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.00294ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:263W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Teil # Mfg. Beschreibung Aktie Preis
PSMN3R9-60PSQ
DISTI # 1727-1133-ND		NexperiaMOSFET N-CH 60V SOT78
RoHS: Compliant
Min Qty: 1
Container: Tube		4986In Stock
  • 1000:$1.1221
  • 500:$1.3542
  • 100:$1.7412
  • 50:$1.9346
  • 1:$2.4000
PSMN3R9-60PSQ
DISTI # PSMN3R9-60PSQ		NexperiaPHSPSMN3R9-60PSQ - Rail/Tube (Alt: PSMN3R9-60PSQ)
RoHS: Compliant
Min Qty: 5000
Container: Tube		Americas - 0
  • 5000:$0.9249
  • 7000:$0.9129
  • 12000:$0.8899
  • 25000:$0.8679
  • 50000:$0.8469
PSMN3R9-60PSQ
DISTI # PSMN3R9-60PSQ		NexperiaPHSPSMN3R9-60PSQ (Alt: PSMN3R9-60PSQ)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 50:€1.0419
  • 100:€0.8679
  • 200:€0.8009
  • 300:€0.7439
  • 500:€0.6939
PSMN3R9-60PSQ
DISTI # 90W9538		NexperiaMOSFET Transistor, N Channel, 130 A, 60 V, 0.00294 ohm, 10 V, 3 V RoHS Compliant: Yes4783
  • 1:$1.7300
  • 10:$1.4700
  • 100:$1.1800
  • 500:$1.0900
  • 1000:$0.9770
  • 2500:$0.7930
  • 5000:$0.7680
PSMN3R9-60PSQ
DISTI # 771-PSMN3R9-60PSQ		NexperiaMOSFET N-channel 60 V 3.9 mo FET
RoHS: Compliant		0
  • 5000:$0.9150
PSMN3R9-60PSQ
DISTI # 2319896		NexperiaMOSFET, N-CH, 60V, 130A, SOT78
RoHS: Compliant		4783
  • 5:£2.0100
  • 25:£1.4400
  • 100:£1.3000
  • 250:£1.1600
  • 500:£1.0200
PSMN3R9-60PSQ
DISTI # 2319896		NexperiaMOSFET, N-CH, 60V, 130A, SOT78
RoHS: Compliant		4783
  • 1:$3.3200
  • 10:$2.8600
  • 25:$2.0800
  • 100:$1.7300
  • 250:$1.4300
  • 500:$1.3400
  • 1000:$1.2800
  • 2500:$1.2600
Bild Teil # Beschreibung
PSMN3R3-40YS,115

Mfr.#: PSMN3R3-40YS,115

OMO.#: OMO-PSMN3R3-40YS-115

 MOSFET N-CHAN 40V 97A
PSMN3R0-30YLDX

Mfr.#: PSMN3R0-30YLDX

OMO.#: OMO-PSMN3R0-30YLDX-NEXPERIA

 MOSFET N-CH 30V 100A LFPAK
PSMN3R3-40YS

Mfr.#: PSMN3R3-40YS

OMO.#: OMO-PSMN3R3-40YS-1190

 MOSFET,N CHANNEL,40V,100A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0026ohm, Rds(on) Test Voltage Vgs:10V, Thr
PSMN3R3-80PS

Mfr.#: PSMN3R3-80PS

OMO.#: OMO-PSMN3R3-80PS-1190

 Neu und Original
PSMN3R4-30PL127

Mfr.#: PSMN3R4-30PL127

OMO.#: OMO-PSMN3R4-30PL127-1190

 Now Nexperia PSMN3R4-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN3R5-30YL115

Mfr.#: PSMN3R5-30YL115

OMO.#: OMO-PSMN3R5-30YL115-1190

 Trans MOSFET N-CH 30V 100A 4-Pin LFPAK T/R (Alt: PSMN3R5-30YL,115)
PSMN3R5-80PS

Mfr.#: PSMN3R5-80PS

OMO.#: OMO-PSMN3R5-80PS-1190

 - Bulk (Alt: PSMN3R5-80PS)
PSMN3R9-60XS,127

Mfr.#: PSMN3R9-60XS,127

OMO.#: OMO-PSMN3R9-60XS-127-1190

 Neu und Original
PSMN3R9-60XSQ

Mfr.#: PSMN3R9-60XSQ

OMO.#: OMO-PSMN3R9-60XSQ-NXP-SEMICONDUCTORS

 MOSFET N-CH 60V 75A TO-220F
PSMN3R0-60BS,118

Mfr.#: PSMN3R0-60BS,118

OMO.#: OMO-PSMN3R0-60BS-118-NEXPERIA

 IGBT Transistors MOSFET Std N-chanMOSFET
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von PSMN3R9-60PSQ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,15 $
1,15 $
10
1,09 $
10,94 $
100
1,04 $
103,68 $
500
0,98 $
489,60 $
1000
0,92 $
921,60 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top