FDFMA3N109

Mfr. #:: FDFMA3N109
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 30V 2.9A MICRO2X2
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDFMA3N109 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Fairchild Semiconductor

Produktkategorie: FETs - Einzeln

Serie: PowerTrenchR

Verpackung: Digi-ReelR Alternative Verpackung

Gewichtseinheit: 0.002116 oz

Montageart: SMD/SMT

Paket-Koffer: 6-WDFN Exposed Pad

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: 6-MicroFET (2x2)

Aufbau: Single mit Schottky-Diode

FET-Typ: MOSFET N-Kanal, Metalloxid

Leistung max: 650mW

Transistor-Typ: 1 N-Channel

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 220pF @ 15V

FET-Funktion: Diode (isoliert)

Strom-Dauer-Drain-Id-25°C: 2.9A (Tc)

Rds-On-Max-Id-Vgs: 123 mOhm @ 2.9A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

Gate-Lade-Qg-Vgs: 3nC @ 4.5V

Pd-Verlustleistung: 1.5 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 8 ns

Anstiegszeit: 8 ns

Vgs-Gate-Source-Spannung: 12 V

ID-Dauer-Drain-Strom: 2.9 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Widerstand: 123 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 12 ns

Typische-Einschaltverzögerungszeit: 6 ns

Kanal-Modus: Erweiterung

Tags: FDFMA3, FDFMA, FDFM, FDF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFMA3N109 Beschreibung

***Semiconductor: Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

***ment14 APAC: MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDFMA3N109 DISTI # V72:2272_06337763	ON Semiconductor	30V,2.9A ,INTEGRATED, NCH POWE	1923	1000:$0.2692 500:$0.2990 250:$0.3323 100:$0.3693 25:$0.5657 10:$0.5666 1:$0.6695
FDFMA3N109 DISTI # FDFMA3N109FSCT-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	21130In Stock	1000:$0.3586 500:$0.4482 100:$0.6051 10:$0.7840 1:$0.9000
FDFMA3N109 DISTI # FDFMA3N109FSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	21130In Stock	1000:$0.3586 500:$0.4482 100:$0.6051 10:$0.7840 1:$0.9000
FDFMA3N109 DISTI # FDFMA3N109FSTR-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	3000:$0.3155
FDFMA3N109 DISTI # 25745010	ON Semiconductor	30V,2.9A ,INTEGRATED, NCH POWE	1923	1000:$0.2692 500:$0.2990 250:$0.3323 100:$0.3693 29:$0.5657
FDFMA3N109 DISTI # FDFMA3N109	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDFMA3N109) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3319 6000:€0.2719 12000:€0.2489 18000:€0.2299 30000:€0.2129
FDFMA3N109 DISTI # FDFMA3N109	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA3N109) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2359 6000:$0.2339 12000:$0.2309 18000:$0.2279 30000:$0.2219
FDFMA3N109 DISTI # 04M9094	ON Semiconductor	TRANSISTOR ARRAY, FULL REEL,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1:$0.2670 9000:$0.2580 24000:$0.2480
FDFMA3N109	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	75450	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
FDFMA3N109 DISTI # 512-FDFMA3N109	ON Semiconductor	MOSFET PowerTrench MOSFET and Schottky Diode RoHS: Compliant	5668	1:$0.7400 10:$0.6140 100:$0.3960 1000:$0.3170 3000:$0.2680 9000:$0.2580 24000:$0.2480
FDFMA3N109 DISTI # 1324787RL	ON Semiconductor	MOSFET, N, MLP6 RoHS: Compliant	0	1:$1.1800 10:$0.9720 100:$0.6270 1000:$0.5020 3000:$0.4250 9000:$0.4090 24000:$0.3930 45000:$0.3870
FDFMA3N109 DISTI # 1324787	ON Semiconductor	MOSFET, N, MLP6 RoHS: Compliant	0	1:$1.1800 10:$0.9720 100:$0.6270 1000:$0.5020 3000:$0.4250 9000:$0.4090 24000:$0.3930 45000:$0.3870
FDFMA3N109 DISTI # C1S541901518927	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MLP EP T/R RoHS: Compliant	1923	250:$0.3323 100:$0.3693 25:$0.5657 10:$0.5666

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDFMA2N028Z OMO.#: OMO-FDFMA2N028Z	MOSFET 20V N-Ch PT MFET SCHOTTKY
	Mfr.#: FDFMA2P853 OMO.#: OMO-FDFMA2P853	MOSFET MLP 2X2 DUAL INTEGRATED PCH PO
	Mfr.#: FDFMA2P853T OMO.#: OMO-FDFMA2P853T	MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench
	Mfr.#: FDFMA2P853T OMO.#: OMO-FDFMA2P853T-ON-SEMICONDUCTOR	MOSFET P-CH 20V 3A 6-MICROFET
	Mfr.#: FDFMA2P029 OMO.#: OMO-FDFMA2P029-1190	Neu und Original
	Mfr.#: FDFMA2P029Z OMO.#: OMO-FDFMA2P029Z-ON-SEMICONDUCTOR	MOSFET P-CH 20V 3.1A 2X2MLP
	Mfr.#: FDFMA2P853(853N) OMO.#: OMO-FDFMA2P853-853N--1190	Neu und Original
	Mfr.#: FDFMA2P853/853F OMO.#: OMO-FDFMA2P853-853F-1190	Neu und Original
	Mfr.#: FDFMA3N109 OMO.#: OMO-FDFMA3N109-ON-SEMICONDUCTOR	MOSFET N-CH 30V 2.9A MICRO2X2
	Mfr.#: FDFMA520PZ OMO.#: OMO-FDFMA520PZ-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von FDFMA3N109 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,32 $~~; ~~0,32 $~~

10: ~~0,31 $~~; ~~3,06 $~~

100: ~~0,29 $~~; ~~29,03 $~~

500: ~~0,27 $~~; ~~137,05 $~~

1000: ~~0,26 $~~; ~~258,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDFMA3 3
FDFMA 25
FDFM 42
FDF 129

FDFMA3N109

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes