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FZ900R12KE4HOSA1

FZ900R12KE4HOSA1
Mfr. #:
FZ900R12KE4HOSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT MODULE 1200V 900A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FZ900R12KE4HOSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FZ900R12KE, FZ900R12, FZ900R, FZ900, FZ90, FZ9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans IGBT Module N-CH 1200V 900A 4300000mW Automotive 4-Pin 62MM-2 Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 900A; Transistor Polarity:n Channel; Dc Collector Current:900A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.3Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT4 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; 4 kV AC 1 min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
***ark
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
*** Source Electronics
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
***ure Electronics
FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
***nell
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ineon
Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***et Europe
Trans IGBT Module N-CH 1.2kV 150A nom 1250W 7-Pin 106.4x61.4mm
***ronik
IGBT-Mod. 150A 1200V 2,5kV 62mm
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 17 mJ Energy dissipation during turn-off time: 18 mJ
***th Star Micro
Trans IGBT Module N-CH 600V 300A 8-Pin PM-IA
***i-Key
IGBT MOLDING 600V 300A 7PM-IA
***i-Key Marketplace
IGBT, 300A, 600V, N-CHANNEL
***omponent
Fairchild Semiconductor power module
***ser
IGBTs Molding Type Module
***el Electronic
IC REG LINEAR 1.2V 1A 8HSON
***ter Electronics
600V 300A MODULE
***el Nordic
Contact for details
*** Electronics
Trans IGBT Module N-CH 600V 400A 8-Pin PM-IA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***omponent
Fairchild Semiconductor power module
***et
Trans IGBT Module N-CH 600V 65A 12-Pin Case SP1
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
***i-Key
IGBT NPT BRIDGE 600V 65A SP1
***el Electronic
IGBT MODULE 600V 65A 250W SP1
Teil # Mfg. Beschreibung Aktie Preis
FZ900R12KE4HOSA1
DISTI # V99:2348_18194958		Infineon Technologies AGTrans IGBT Module N-CH 1200V 900A 4300000mW 4-Pin Tray
RoHS: Compliant		10
  • 1:$154.9700
FZ900R12KE4HOSA1
DISTI # FZ900R12KE4HOSA1-ND		Infineon Technologies AGIGBT MODULE 1200V 900A
RoHS: Compliant
Min Qty: 1
Container: Bulk		58In Stock
  • 1:$155.1700
FZ900R12KE4HOSA1
DISTI # 33595702		Infineon Technologies AGTrans IGBT Module N-CH 1200V 900A 4300000mW 4-Pin Tray
RoHS: Compliant		10
  • 1:$154.9700
FZ900R12KE4HOSA1
DISTI # FZ900R12KE4HOSA1		Infineon Technologies AGMEDIUM POWER 62MM - Trays (Alt: FZ900R12KE4HOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
    FZ900R12KE4
    DISTI # 641-FZ900R12KE4    		Infineon Technologies AGIGBT Modules 1200V 900A
    RoHS: Compliant    		115
    • 1:$158.4300
    • 5:$154.6200
    • 10:$150.7800
    • 25:$148.6700
    FZ900R12KE4HOSA1
    DISTI # 2709939    		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 900A0
    • 10:£117.0000
    • 5:£120.0000
    • 1:£122.0000
    FZ900R12KE4HOSA1
    DISTI # 2709939    		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 900A
    RoHS: Compliant    		0
    • 1:$236.7800
    FZ900R12KE4HOSA1
    DISTI # XSKDRABV0052020    		Infineon Technologies AG 
    RoHS: Compliant    		12 in Stock0 on Order
    • 12:$195.4300
    • 10:$209.3900
    Bild Teil # Beschreibung
    FZ900R12KE4

    Mfr.#: FZ900R12KE4

    OMO.#: OMO-FZ900R12KE4

    		 IGBT Modules 1200V 900A
    FZ900R12KP4

    Mfr.#: FZ900R12KP4

    OMO.#: OMO-FZ900R12KP4

    		 IGBT Modules IGBT 1200V 900A
    FZ900R12KP4

    Mfr.#: FZ900R12KP4

    OMO.#: OMO-FZ900R12KP4-125

    		 IGBT Modules IGBT 1200V 900A
    FZ900R12KE4

    Mfr.#: FZ900R12KE4

    OMO.#: OMO-FZ900R12KE4-125

    		 IGBT Modules 1200V 900A
    FZ900R12KE4HOSA1

    Mfr.#: FZ900R12KE4HOSA1

    OMO.#: OMO-FZ900R12KE4HOSA1-INFINEON-TECHNOLOGIES

    		 IGBT MODULE 1200V 900A
    FZ900R12KF3

    Mfr.#: FZ900R12KF3

    OMO.#: OMO-FZ900R12KF3-1190

    		 Neu und Original
    FZ900R12KF4

    Mfr.#: FZ900R12KF4

    OMO.#: OMO-FZ900R12KF4-1190

    		 Neu und Original
    FZ900R12KF6

    Mfr.#: FZ900R12KF6

    OMO.#: OMO-FZ900R12KF6-1190

    		 Neu und Original
    FZ900R12KL4

    Mfr.#: FZ900R12KL4

    OMO.#: OMO-FZ900R12KL4-1190

    		 Neu und Original
    FZ900R12KP4HOSA1

    Mfr.#: FZ900R12KP4HOSA1

    OMO.#: OMO-FZ900R12KP4HOSA1-INFINEON-TECHNOLOGIES

    		 MOD IGBT MED PWR 62MM-2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von FZ900R12KE4HOSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    190,98 $
    190,98 $
    10
    181,43 $
    1 814,31 $
    100
    171,88 $
    17 188,20 $
    500
    162,33 $
    81 166,50 $
    1000
    152,78 $
    152 784,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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