IXFK24N100F

IXFK24N100F
Mfr. #:
IXFK24N100F
Hersteller:
IXYS
Beschreibung:
MOSFET N-CH 1000V 24A TO264
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFK24N100F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK24N100F Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IXFK24N1, IXFK24N, IXFK24, IXFK2, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 1000V 24A TO264
***ark
MOSFET, N, RF, TO-264; Transistor Type:MOSFET; Drain Source Voltage Vds:1000V; Continuous Drain Current Id:24A; Power Dissipation Max:560W; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Package / Case:TO-264; ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N, RF, TO-264; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:24A; Power Dissipation Pd:560W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6600pF; On Resistance Rds(on):390mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:560W; Rise Time:18ns; Termination Type:Through Hole; Threshold Voltage Vgs:5.5V; Transistor Case Style:TO-264; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:1kV; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, RF, TO-264; Napięcie drenu / źródła Vds:1kV; Prąd ciągły Id drenu:24A; Straty mocy Pd:560W; Częstotliwość robocza, min.:-; Częstotliwość robocza, maks.:500kHz; Obudowa tranzystora RF:TO-264; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (12-Jan-2017); Biegunowość tranzystora:Kanał N; Czas narastania:18ns; Napięcie Vds, typ.:1kV; Napięcie Vgs pomiaru Rds on:10V; Napięcie progowe Vgs:5.5V; Rezystancja przewodzenia Rds(on):390mohm; Rodzaj obudowy tranzystora:TO-264; Rodzaj tranzystora:RF MOSFET; Straty mocy, maks.:560W; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Typowa pojemność Ciss Typ:6600pF; Zakres temperatury roboczej:-55°C do +150°C
Teil # Mfg. Beschreibung Aktie Preis
IXFK24N100F
DISTI # IXFK24N100F-ND
IXYS CorporationMOSFET N-CH 1000V 24A TO264
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IXFK24N100F
    DISTI # 747-IXFK24N100F
    IXYS CorporationMOSFET IXFK24N100F 24A 1000V F-Class HiPerRF Capable MOSFET
    RoHS: Compliant
    0
      IXFK24N100F
      DISTI # 1347759
      IXYS CorporationMOSFET, N, RF, TO-264
      RoHS: Compliant
      0
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IXFK24N100F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      42,32 $
      42,32 $
      10
      40,20 $
      401,99 $
      100
      38,08 $
      3 808,35 $
      500
      35,97 $
      17 983,90 $
      1000
      33,85 $
      33 852,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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