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SI7456CDP-T1-GE3

SI7456CDP-T1-GE3
Mfr. #:
SI7456CDP-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 100V 27.5A 35.7W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7456CDP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Handelsname
TrenchFET
Paket-Koffer
SO-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
35.7 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
27.5 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
31.5 mOhms
Transistor-Polarität
N-Kanal
Tags
SI7456, SI745, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 100V 27.5A PPAK SO-8
***
100V, 25 MOHMS@10V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0195Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:5W; No. Of Pins:8Pins Rohs Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:19500µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:10.3A; Power Dissipation:5W
***ment14 APAC
MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):19500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.8019
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8871
  • 500:$1.0707
  • 100:$1.3766
  • 10:$1.7130
  • 1:$1.9000
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8871
  • 500:$1.0707
  • 100:$1.3766
  • 10:$1.7130
  • 1:$1.9000
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7456CDP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7859
  • 6000:$0.7619
  • 12000:$0.7309
  • 18000:$0.7109
  • 30000:$0.6919
SI7456CDP-T1-GE3
DISTI # 86R3925		Vishay IntertechnologiesMOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V0
  • 1:$0.7890
  • 3000:$0.7830
  • 6000:$0.7460
SI7456CDP-T1-GE3.
DISTI # 30AC0199		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.7890
  • 3000:$0.7830
  • 6000:$0.7460
SI7456CDP-T1-GE3
DISTI # 78-SI7456CDP-T1-GE3		Vishay IntertechnologiesMOSFET 100V 27.5A 35.7W
RoHS: Compliant		0
  • 1:$1.6800
  • 10:$1.4000
  • 100:$1.0800
  • 500:$0.9460
  • 1000:$0.9010
  • 3000:$0.9000
SI7456CDP-T1-GE3Vishay IntertechnologiesMOSFET 100V 27.5A 35.7WAmericas -
    Bild Teil # Beschreibung
    SI7456CDP-T1-GE3

    Mfr.#: SI7456CDP-T1-GE3

    OMO.#: OMO-SI7456CDP-T1-GE3

    		 MOSFET 100V 27.5A 35.7W
    SI7456CDP-T1-GE3

    Mfr.#: SI7456CDP-T1-GE3

    OMO.#: OMO-SI7456CDP-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 100V 27.5A 35.7W
    SI7456CDP-T1-E3

    Mfr.#: SI7456CDP-T1-E3

    OMO.#: OMO-SI7456CDP-T1-E3-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von SI7456CDP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,26 $
    1,26 $
    10
    1,19 $
    11,95 $
    100
    1,13 $
    113,18 $
    500
    1,07 $
    534,45 $
    1000
    1,01 $
    1 006,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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