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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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SI4378DY-T1-GE3 DISTI # V72:2272_09215553 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 19A 8-Pin SOIC N T/R RoHS: Compliant | 963 |
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SI4378DY-T1-E3 DISTI # V72:2272_09215552 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 19A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
SI4378DY-T1-E3 DISTI # SI4378DY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 19A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5721In Stock |
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SI4378DY-T1-E3 DISTI # SI4378DY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 19A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5721In Stock |
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SI4378DY-T1-E3 DISTI # SI4378DY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 19A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 5000In Stock |
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SI4378DY-T1-GE3 DISTI # SI4378DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 19A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4940In Stock |
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SI4378DY-T1-GE3 DISTI # SI4378DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 19A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4940In Stock |
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SI4378DY-T1-GE3 DISTI # SI4378DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 19A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
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SI4378DY-T1-GE3 DISTI # 25789843 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 19A 8-Pin SOIC N T/R RoHS: Compliant | 963 |
|
SI4378DY-T1-GE3 DISTI # 16P3732 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 25A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes | 0 | |
SI4378DY-T1-GE3 DISTI # 18X0011 | Vishay Intertechnologies | MOSFET, N CHANNEL, 20V, 19A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes | 0 | |
SI4378DY-T1-E3 DISTI # 57J5656 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 25A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes | 0 | |
SI4378DY-T1-E3 DISTI # 85W2144 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:1.6W,No. of Pins:8Pins RoHS Compliant: Yes | 15 |
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SI4378DY-T1-GE3 DISTI # 781-SI4378DY-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4186DY-GE3 RoHS: Compliant | 0 | |
SI4378DY-T1-E3 DISTI # 781-SI4378DY-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4186DY-GE3 RoHS: Compliant | 0 | |
SI4378DY-T1-E3 DISTI # 2335307 | Vishay Intertechnologies | MOSFET, N CH, 20V, 0.0022OHM, 19A, SOIC RoHS: Compliant | 27 |
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Bild | Teil # | Beschreibung |
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Mfr.#: SI4356-B1A-FMR OMO.#: OMO-SI4356-B1A-FMR |
RF Receiver RX sub-GHz receiver | |
Mfr.#: SI4382DY-T1-GE3 OMO.#: OMO-SI4382DY-T1-GE3-317 |
RF Bipolar Transistors MOSFET 30V 4.7mohm @ 10V | |
Mfr.#: SI4354DY-T1-GE3 OMO.#: OMO-SI4354DY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 9.5A 2.5W 16.5mohm @ 10V | |
Mfr.#: SI4300T-BM OMO.#: OMO-SI4300T-BM-1190 |
Neu und Original | |
Mfr.#: SI4346 OMO.#: OMO-SI4346-1190 |
Neu und Original | |
Mfr.#: SI434DY-T1-GE3 OMO.#: OMO-SI434DY-T1-GE3-1190 |
Neu und Original | |
Mfr.#: SI435 OMO.#: OMO-SI435-1190 |
Neu und Original | |
Mfr.#: SI4396DY OMO.#: OMO-SI4396DY-1190 |
Neu und Original | |
Mfr.#: SI4396DY-T1-E3 GE3 OMO.#: OMO-SI4396DY-T1-E3-GE3-1190 |
Neu und Original | |
Mfr.#: SI4355-B1A-FM |
RF RX FSK/GFSK 283-350MHZ 20QFN |