We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMI16N50E DISTI # FE0000000000983 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI16N50ESSC DISTI # FE0000000004526 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI16N50ESC DISTI # FE0000000004525 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI16N50ES DISTI # FE0000000000984 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: FMI11N60E OMO.#: OMO-FMI11N60E-1190 |
Power Field-Effect Transistor, 11A I(D),600V,0.75ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI12N50E OMO.#: OMO-FMI12N50E-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.52ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI12N50ES OMO.#: OMO-FMI12N50ES-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI13N60E OMO.#: OMO-FMI13N60E-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI13N60ES OMO.#: OMO-FMI13N60ES-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI161JZ OMO.#: OMO-FMI161JZ-1190 |
Neu und Original |
|
|
Mfr.#: FMI16N50E OMO.#: OMO-FMI16N50E-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI16N50ES OMO.#: OMO-FMI16N50ES-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI16N60E OMO.#: OMO-FMI16N60E-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI16N60ES OMO.#: OMO-FMI16N60ES-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |