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FDML7610S

FDML7610S
Mfr. #:
FDML7610S
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 30V N-Channel PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDML7610S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDML7610S Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-3x45-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
7.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
20 nC, 43 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.2 W
Aufbau:
Dual
Handelsname:
Power-Stage PowerTrench SyncFet
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
4.5 mm
Serie:
FDML7610S
Transistortyp:
2 N-Channel
Breite:
3 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.010582 oz
Tags
FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 30V 40A/60A 8-Pin MLP T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ment14 APAC
DUAL N CH MOSFET, POWERTRENCH, 30V, 30A,; DUAL N CH MOSFET, POWERTRENCH, 30V, 30A, MLP3X4.5; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0075ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***et
Transistor MOSFET Array Dual N-CH 30V 30A/40A 8-Pin Power 56 T/R
***ment14 APAC
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:22A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0022ohm; Rds(on) Test Voltage Vgs:10V
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual-MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 30V 30A/40A 8-Pin Power 56 T/R - Tape and Reel
***ment14 APAC
MOSFET,NN CH,30V,POWER56; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.0019ohm; Power Dissipation Pd:2.5W
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dua- MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***i-Key
MOSFET N-CH 30V 13.5A BGA
***ser
MOSFETs 30V/12V, NCh SYNCFET
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
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***icontronic
Small Signal Field-Effect Transistor, 17.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***(Formerly Allied Electronics)
NTMFS4841NHT1G N-channel MOSFET Transistor, 59 A, 30 V, 8-Pin SO-8FL | ON Semiconductor NTMFS4841NHT1G
***ure Electronics
Single N-Channel 30 V 6.72 mOhm 11.3 nC 2.16 W SMT Power Mosfet -SO-8FL
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Trans MOSFET N-CH 30V 13.5A 5-Pin(4+Tab) SO-FL T/R
***th Star Micro
Power MOSFET 30 V 59 A Single N-Channel SO-8 FL
***ponent Stockers USA
13.5 A 30 V 0.0116 ohm N-CHANNEL Si POWER MOSFET
*** Stop Electro
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 30V, 59A, DFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
FDMS36xxS Power Stage Dual Asymmetric MOSFETs
ON Semiconductor FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide the highest output current capability among all 5mm x 6mm dual MOSFET solutions on the market. The FDMS36xxS dual asymmetric MOSFETs incorporate a control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow enable easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET have been designed to provide optimal power efficiency for output currents up to 30A. These ON Semiconductor devices achieve industry-leading sub-2mΩ low side rDS(on) at high performance computing rated breakdown voltages. FDMS36xxS MOSFETs are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDML7610S
DISTI # FDML7610STR-ND		ON SemiconductorMOSFET 2N-CH 30V 12A/17A 8-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7315
FDML7610S
DISTI # FDML7610SCT-ND		ON SemiconductorMOSFET 2N-CH 30V 12A/17A 8-MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8073
  • 500:$1.0225
  • 100:$1.3185
  • 10:$1.6680
  • 1:$1.8800
FDML7610S
DISTI # FDML7610SDKR-ND		ON SemiconductorMOSFET 2N-CH 30V 12A/17A 8-MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8073
  • 500:$1.0225
  • 100:$1.3185
  • 10:$1.6680
  • 1:$1.8800
FDML7610S
DISTI # FDML7610S		ON SemiconductorTrans MOSFET N-CH 30V 12A/17A 8-Pin MLP EP T/R (Alt: FDML7610S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    FDML7610S
    DISTI # FDML7610S    		ON SemiconductorTrans MOSFET N-CH 30V 12A/17A 8-Pin MLP EP T/R - Tape and Reel (Alt: FDML7610S)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.6199
    • 6000:$0.6159
    • 12000:$0.6079
    • 18000:$0.6009
    • 30000:$0.5859
    FDML7610SFairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 30V, 0.0075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		41
    • 1000:$0.7800
    • 500:$0.8200
    • 100:$0.8500
    • 25:$0.8900
    • 1:$0.9600
    FDML7610S
    DISTI # 512-FDML7610S    		ON SemiconductorMOSFET 30V N-Channel PowerTrench
    RoHS: Compliant    		2900
    • 1:$1.5600
    • 10:$1.3300
    • 100:$1.0300
    • 500:$0.9030
    • 1000:$0.7130
    • 3000:$0.6320
    FDML7610S
    DISTI # 2009253    		ON SemiconductorDUAL N CH MOSFET, POWERTRENCH, 30V, 30A,
    RoHS: Compliant    		0
    • 3000:£0.6270
    Bild Teil # Beschreibung
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    MBRS140T3G

    Mfr.#: MBRS140T3G

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    Mfr.#: MAX9813LEKA+T

    OMO.#: OMO-MAX9813LEKA-T-MAXIM-INTEGRATED

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    Mfr.#: CONMCX001

    OMO.#: OMO-CONMCX001-LINX-TECHNOLOGIES

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    LM4040CIM3-2.5/NOPB

    Mfr.#: LM4040CIM3-2.5/NOPB

    OMO.#: OMO-LM4040CIM3-2-5-NOPB-TEXAS-INSTRUMENTS

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von FDML7610S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,55 $
    1,55 $
    10
    1,33 $
    13,30 $
    100
    1,02 $
    102,00 $
    500
    0,90 $
    451,50 $
    1000
    0,71 $
    713,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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