GT50J325(Q)

Mfr. #:: GT50J325(Q)
Hersteller:: Toshiba America Electronic Components
Beschreibung:: Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P(LH)
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: GT50J325(Q) Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: GT50J32, GT50J3, GT50J, GT50, GT5

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GT50J325(Q) Beschreibung

***ical: Trans IGBT Chip N-CH 600V 50A 240000mW 3-Pin(3+Tab) TO-3PL

*** Stop Electro: Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel

***S: originally new

*** Source Electronics: Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3

***ure Electronics: IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1

***ource: IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A

***ment14 APAC: IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail

***eco: Transistor IGBT Chip N Channel 1.2k Volt 50 Amp 3-Pin 3+ Tab TO-3PN Rail

***ure Electronics: FGA25N120ANTD Series 1200 V 50 A Flange Mont NPT Trench IGBT - TO-3PN

***el Electronic: In a Pack of 2, ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P

***ment14 APAC: IGBT, NPT, TO-3PN; DC Collector Current:50A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:312mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Package / Case:TO-3PN; Power Dissipation Max:312W; Power Dissipation Pd:312mW; Pulsed Current Icm:90A; Rise Time:60ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***th Star Micro: Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

***ical: Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:1.8V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:365W

***ineon SCT: The 2nd generation of reverse conducting 1200 V, 25 A TRENCHSTOP™ RC-IGBT3 and Fieldstop technology with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses, PG-TO247-3, RoHS

***ineon: IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | Summary of Features: Best-in-class V CEsat and V f for outstanding efficiency; Lowest switching losses; Stable temperature behavior; Soft current turn-off waveforms; High breakthrough voltage; Resistance to current spikes over the SOA | Benefits: Lowest power dissipation; Better thermal management; Lower cost for heat sink, cooling and EMI filtering; Highest device safety and reliability; Reduced system costs; Best-in-class performance for competitive price

***ark: Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***p One Stop: Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.4pF 25volts C0G +/-0.25pF

***ment14 APAC: IGBT,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:190W

***ineon SCT: Infineon's 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***et: Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail

***nell: IGBT, SINGLE, 1KV, 50A, TO-3P; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1kV; Transistor Case Style: TO-3P; No. of Pins: 3Pin

***rchild Semiconductor: Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
GT50J325(Q) DISTI # 30599504	Toshiba America Electronic Components	Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P(LH) RoHS: Compliant	415	200:$6.8340 100:$7.0125 50:$7.2930 10:$9.0525 3:$10.0343
GT50J325(Q) DISTI # C1S751200315189	Toshiba America Electronic Components	Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P(LH) RoHS: Compliant	415	200:$5.3600 100:$5.5000 50:$5.7200 10:$7.1000 1:$7.8700
GT50J325Q DISTI # GT50J325(Q)	Toshiba America Electronic Components	Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) - Bulk (Alt: GT50J325(Q)) RoHS: Compliant Min Qty: 100 Container: Bulk	Americas - 0
GT50J325(Q) DISTI # 757-GT50J325(Q)	Toshiba America Electronic Components	IGBT Transistors 600V/50A DIS+FRD RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: GT50JR22(STA1,E,S) OMO.#: OMO-GT50JR22-STA1-E-S-	IGBT Transistors IGBT for Soft Switching Apps
	Mfr.#: GT50J102 OMO.#: OMO-GT50J102-1190	IGBT, 600V, TO-3P(LH)
	Mfr.#: GT50J102Q OMO.#: OMO-GT50J102Q-1190	Neu und Original
	Mfr.#: GT50J121(Q) OMO.#: OMO-GT50J121-Q--TOSHIBA-SEMICONDUCTOR-AND-STOR	Neu und Original
	Mfr.#: GT50J122 OMO.#: OMO-GT50J122-1190	Neu und Original
	Mfr.#: GT50J322 OMO.#: OMO-GT50J322-1190	Neu und Original
	Mfr.#: GT50J342Q(0 OMO.#: OMO-GT50J342Q-0-1190	Neu und Original
	Mfr.#: GT50JR22(STA1ES) OMO.#: OMO-GT50JR22-STA1ES--1190	Neu und Original
	Mfr.#: GT50J121(Q)-ND OMO.#: OMO-GT50J121-Q--ND-1190	Neu und Original
	Mfr.#: GT50J341,Q(O) OMO.#: OMO-GT50J341-Q-O--1190	IGBT Chip

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von GT50J325(Q) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~8,04 $~~; ~~8,04 $~~

10: ~~7,64 $~~; ~~76,38 $~~

100: ~~7,24 $~~; ~~723,60 $~~

500: ~~6,83 $~~; ~~3 417,00 $~~

1000: ~~6,43 $~~; ~~6 432,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

GT50J32 13
GT50J3 21
GT50J 42
GT50 82
GT5 352

GT50J325(Q)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes