IRLHS6376TRPBF

Mfr. #:: IRLHS6376TRPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET 30V 1 N-CH HEXFET 2.8nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRLHS6376TRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRLHS6376TRPBF Datasheet IRLHS6376TRPBF Datasheet (P4-P6)IRLHS6376TRPBF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:: IRLHS6376TRPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PQFN-6

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 3.6 A

Rds On - Drain-Source-Widerstand:: 63 mOhms

Vgs - Gate-Source-Spannung:: 12 V

Qg - Gate-Ladung:: 2.8 nC

Pd - Verlustleistung:: 1.5 W

Aufbau:: Dual

Verpackung:: Spule

Höhe:: 0.9 mm

Länge:: 2 mm

Transistortyp:: 2 N-Channel

Breite:: 2 mm

Marke:: Infineon / IR

Produktart:: MOSFET

Werkspackungsmenge:: 4000

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001573000

Tags: IRLHS6376TRP, IRLHS6376T, IRLHS637, IRLHS63, IRLHS6, IRLHS, IRLH, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLHS6376TRPBF Beschreibung

***ure Electronics: Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

***ineon SCT: 30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS

***et Europe: Transistor MOSFET Array Dual N-CH 30V 3.4A 6-Pin PQFN T/R

***p One Stop Japan: Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch

***ment14 APAC: DUAL N CH, 30V, 3.6A, PQFN-6; Transistor; DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V

IRLHS6376TRPBF Mehr Informationen

Dual PQFN HEXFET® Power MOSFETs: Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRLHS6376TRPBF DISTI # V72:2272_13889594	Infineon Technologies AG	Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R RoHS: Compliant	8516	6000:$0.1715 3000:$0.1971 1000:$0.1993 500:$0.2471 250:$0.2499 100:$0.2527 25:$0.3654 10:$0.3701 1:$0.4268
IRLHS6376TRPBF DISTI # IRLHS6376TRPBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 3.6A 2X2 PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3049In Stock	1000:$0.2894 500:$0.3667 100:$0.4903 10:$0.6450 1:$0.7600
IRLHS6376TRPBF DISTI # IRLHS6376TRPBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 3.6A 2X2 PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3049In Stock	1000:$0.2894 500:$0.3667 100:$0.4903 10:$0.6450 1:$0.7600
IRLHS6376TRPBF DISTI # IRLHS6376TRPBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 3.6A PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.2585
IRLHS6376TRPBF DISTI # 27507049	Infineon Technologies AG	Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R RoHS: Compliant	12000	40000:$0.1285 24000:$0.1324 16000:$0.1353 8000:$0.1391 4000:$0.1429
IRLHS6376TRPBF DISTI # 26196122	Infineon Technologies AG	Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R RoHS: Compliant	8516	6000:$0.1715 3000:$0.1971 1000:$0.1993 500:$0.2471 250:$0.2499 100:$0.2527 42:$0.3654
IRLHS6376TRPBF DISTI # 30605990	Infineon Technologies AG	Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R RoHS: Compliant	3900	1000:$0.2371 500:$0.2576 100:$0.3047 54:$0.4718
IRLHS6376TRPBF DISTI # IRLHS6376TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRLHS6376TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 4000	4000:$0.1489 8000:$0.1449 16000:$0.1409 24000:$0.1379 40000:$0.1339
IRLHS6376TRPBF DISTI # SP001573000	Infineon Technologies AG	Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R (Alt: SP001573000) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.2199 8000:€0.1709 16000:€0.1399 24000:€0.1179 40000:€0.1099
IRLHS6376TRPBF DISTI # 91Y4786	Infineon Technologies AG	MOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,RoHS Compliant: Yes	0	1:$0.6000 10:$0.4930 25:$0.4290 50:$0.3650 100:$0.3010 250:$0.2780 500:$0.2550 1000:$0.2320
IRLHS6376TRPBF. DISTI # 27AC6942	Infineon Technologies AG	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:1.5W RoHS Compliant: Yes	0
IRLHS6376TRPBF DISTI # 942-IRLHS6376TRPBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 2.8nC RoHS: Compliant	19668	1:$0.6000 10:$0.4930 100:$0.3010 1000:$0.2320 4000:$0.1980
IRLHS6376TRPBF	Infineon Technologies AG	Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET Power Mosfet - PQFN 2 x 2 mm RoHS: Compliant	4000Reel	4000:$0.1520
IRLHS6376TRPBF DISTI # 9155092P	Infineon Technologies AG	MOSFET DUAL N-CH HEXFET 30V 3.6A PQFN8, RL	8000	200:£0.0860
IRLHS6376TRPBF DISTI # 2579953	Infineon Technologies AG	MOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8 RoHS: Compliant	2640	5:£0.4260 25:£0.2540 100:£0.2300 250:£0.1920 500:£0.1700
IRLHS6376TRPBF DISTI # C1S322000502260	Infineon Technologies AG	Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R RoHS: Compliant	8516	250:$0.2580 100:$0.2587 25:$0.3709 10:$0.3729
IRLHS6376TRPBF DISTI # C1S322000502251	Infineon Technologies AG	Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R RoHS: Compliant	3900	1000:$0.1860 500:$0.2020 100:$0.2390 50:$0.2730 10:$0.3930
IRLHS6376TRPBF DISTI # 2579953	Infineon Technologies AG	MOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8 RoHS: Compliant	0	1:$0.9500 10:$0.7810 100:$0.4770 1000:$0.3680 4000:$0.3130 8000:$0.2930 24000:$0.2780 48000:$0.2710

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1990
Menge eingeben:

Der aktuelle Preis von IRLHS6376TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,59 $~~; ~~0,59 $~~

10: ~~0,49 $~~; ~~4,93 $~~

100: ~~0,30 $~~; ~~30,10 $~~

1000: ~~0,23 $~~; ~~232,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRLHS6376TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes