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SI3590DV-T1-GE3

SI3590DV-T1-GE3
Mfr. #:
SI3590DV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3590DV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3590DV-T1-GE3 DatasheetSI3590DV-T1-GE3 Datasheet (P4-P6)SI3590DV-T1-GE3 Datasheet (P7-P9)SI3590DV-T1-GE3 Datasheet (P10-P12)SI3590DV-T1-GE3 Datasheet (P13)
ECAD Model:
Mehr Informationen:
SI3590DV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSOP-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
3 A, 2 A
Rds On - Drain-Source-Widerstand:
77 mOhms, 170 mOhms
Vgs th - Gate-Source-Schwellenspannung:
600 mV
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
4.5 nC, 6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.15 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI3
Transistortyp:
1 N-Channel, 1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
10 S, 5 S
Abfallzeit:
7 ns, 20 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns, 15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns, 20 ns
Typische Einschaltverzögerungszeit:
5 ns, 5 ns
Teil # Aliase:
SI3590DV-GE3
Gewichtseinheit:
0.000705 oz
Tags
SI3590DV-T, SI3590D, SI359, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N/P-CH 30V 2.5A 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
***ure Electronics
N- and P-Channel 30-V (D-S) MOSFET
***ied Electronics & Automation
30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
***nell
MOSFET, NP CH, 30V, W DIODE, TSOP6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.062ohm; Power Dissipation Pd:830mW
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Teil # Mfg. Beschreibung Aktie Preis
SI3590DV-T1-GE3
DISTI # V72:2272_09216705		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant		1760
  • 1000:$0.3671
  • 500:$0.4581
  • 250:$0.5280
  • 100:$0.5526
  • 25:$0.7249
  • 10:$0.7986
  • 1:$0.9880
SI3590DV-T1-GE3
DISTI # V36:1790_09216705		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000000:$0.3136
  • 1500000:$0.3138
  • 300000:$0.3265
  • 30000:$0.3469
  • 3000:$0.3502
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4640In Stock
  • 1000:$0.3980
  • 500:$0.4975
  • 100:$0.6293
  • 10:$0.8210
  • 1:$0.9300
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4640In Stock
  • 1000:$0.3980
  • 500:$0.4975
  • 100:$0.6293
  • 10:$0.8210
  • 1:$0.9300
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.3059
  • 15000:$0.3140
  • 6000:$0.3260
  • 3000:$0.3502
SI3590DV-T1-GE3
DISTI # 33699431		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant		9000
  • 3000:$0.2700
SI3590DV-T1-GE3
DISTI # 32404506		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant		1760
  • 22:$0.9880
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R (Alt: SI3590DV-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.3489
  • 500:€0.3559
  • 100:€0.3609
  • 50:€0.3749
  • 25:€0.4059
  • 10:€0.4719
  • 1:€0.6929
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3590DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2939
  • 18000:$0.3029
  • 12000:$0.3109
  • 6000:$0.3239
  • 3000:$0.3339
SI3590DV-T1-GE3
DISTI # 35R0053		Vishay IntertechnologiesDUAL N/P CH MOSFET, 30V, 2A, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes0
  • 50000:$0.2970
  • 30000:$0.3110
  • 20000:$0.3340
  • 10000:$0.3570
  • 5000:$0.3870
  • 1:$0.3960
SI3590DV-T1-GE3
DISTI # 64T4059		Vishay IntertechnologiesMOSFET Transistor, N and P Channel, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V RoHS Compliant: Yes5522
  • 500:$0.5060
  • 250:$0.5530
  • 100:$0.5990
  • 50:$0.6560
  • 25:$0.7130
  • 10:$0.7700
  • 1:$0.9500
SI3590DV-T1-GE3
DISTI # 70459525		Vishay Siliconix30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
RoHS: Compliant		0
  • 3000:$0.4920
  • 6000:$0.4650
SI3590DV-T1-GE3
DISTI # 781-SI3590DV-GE3		Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
RoHS: Compliant		8483
  • 1:$0.9100
  • 10:$0.7330
  • 100:$0.5560
  • 500:$0.4600
  • 1000:$0.3680
  • 3000:$0.3330
  • 6000:$0.3100
  • 9000:$0.2990
SI3590DV-T1-GE3
DISTI # 2056715		Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP616298
  • 500:£0.3580
  • 250:£0.3960
  • 100:£0.4340
  • 10:£0.6250
  • 1:£0.8100
SI3590DV-T1-GE3
DISTI # 2056715		Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP6
RoHS: Compliant		5804
  • 3000:$0.5030
  • 1000:$0.5550
  • 500:$0.6930
  • 100:$0.8390
  • 10:$1.1100
  • 1:$1.3700
SI3590DV-T1-GE3
DISTI # 2056715RL		Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP6
RoHS: Compliant		0
  • 3000:$0.5030
  • 1000:$0.5550
  • 500:$0.6930
  • 100:$0.8390
  • 10:$1.1100
  • 1:$1.3700
SI3590DV-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
RoHS: Compliant		Americas - 3000
  • 3000:$0.2350
  • 6000:$0.2230
  • 12000:$0.2160
  • 18000:$0.2100
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von SI3590DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,91 $
0,91 $
10
0,73 $
7,33 $
100
0,56 $
55,60 $
500
0,46 $
230,00 $
1000
0,37 $
368,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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