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FQU1N60CTU

FQU1N60CTU
Mfr. #:
FQU1N60CTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V N-Channel Adv Q-FET C-Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQU1N60CTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
1 A
Rds On - Drain-Source-Widerstand:
11.5 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
6.3 mm
Länge:
6.8 mm
Serie:
FQU1N60C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
2.5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
0.75 S
Abfallzeit:
27 ns
Produktart:
MOSFET
Anstiegszeit:
21 ns
Werkspackungsmenge:
5040
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns
Typische Einschaltverzögerungszeit:
7 ns
Teil # Aliase:
FQU1N60CTU_NL
Gewichtseinheit:
0.012102 oz
Tags
FQU1N60C, FQU1N6, FQU1N, FQU1, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK ON Semiconductor FQU1N60CTU
***Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, IPAK
***ure Electronics
N-Channel 600 V 11.5 Ohm Through Hole Mosfet -TO-251AA
***p One Stop Global
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube
***ser
MOSFETs 600V N-Channel Adv Q-FET C-Series
***ark
Qfc 600V 11.5Ohm Ipak Rohs Compliant: Yes
***i-Key
MOSFET N-CH 600V 1A IPAK
***inecomponents.com
N-CH/600V/1A/QFET C-Series
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 1A, TO-251AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:28W; Transistor Case Style:TO-251AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CANALE N, 600V, 1A, TO-251AA-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):2.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:28W; Modello Case Transistor:TO-251AA; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
FQU1N60CTU
DISTI # V99:2348_06359653		ON SemiconductorN-CH/600V/1A/QFET C-SERIES4818
  • 1000:$0.2773
  • 500:$0.2950
  • 100:$0.3278
  • 10:$0.4646
  • 1:$0.5338
FQU1N60CTU
DISTI # FQU1N60CTUFS-ND		ON SemiconductorMOSFET N-CH 600V 1A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2202In Stock
  • 1000:$0.3279
  • 500:$0.4099
  • 100:$0.5533
  • 10:$0.7170
  • 1:$0.8200
FQU1N60CTU
DISTI # 25845371		ON SemiconductorN-CH/600V/1A/QFET C-SERIES4818
  • 1000:$0.2773
  • 500:$0.2950
  • 100:$0.3278
  • 28:$0.4646
FQU1N60CTU
DISTI # FQU1N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU1N60CTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.2109
  • 10080:$0.2099
  • 20160:$0.2069
  • 30240:$0.2049
  • 50400:$0.1999
FQU1N60CTU
DISTI # FQU1N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Rail (Alt: FQU1N60CTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.3519
  • 10:€0.3129
  • 25:€0.2809
  • 50:€0.2559
  • 100:€0.2339
  • 500:€0.2159
  • 1000:€0.2009
FQU1N60CTU
DISTI # 31Y1566		ON SemiconductorMOSFET, N-CH, 600V, 1A, TO-251AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3Pins, RoHS Compliant: Yes2561
  • 1:$0.7530
  • 10:$0.6250
  • 100:$0.4110
  • 500:$0.3720
  • 1000:$0.3330
  • 2500:$0.2840
  • 10000:$0.2740
FQU1N60CTU
DISTI # 512-FQU1N60CTU		ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
RoHS: Compliant		1495
  • 1:$0.7000
  • 10:$0.5780
  • 100:$0.3730
  • 1000:$0.2990
  • 2500:$0.2520
  • 10000:$0.2430
  • 25000:$0.2330
FQU1N60CTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 1A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		454886
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
FQU1N60CTU
DISTI # 6715345		ON SemiconductorMOSFET N-CHANNEL 600V 1A IPAK, PK655
  • 5:£0.4820
  • 25:£0.3320
  • 100:£0.2120
  • 250:£0.1960
  • 500:£0.1900
FQU1N60CTUFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 4540
    FQU1N60CTU
    DISTI # 2453915    		ON SemiconductorMOSFET, N-CH, 600V, 1A, TO-251AA-3
    RoHS: Compliant    		2621
    • 1:$1.1100
    • 10:$0.9150
    • 100:$0.5910
    • 1000:$0.4740
    • 2500:$0.3990
    • 10000:$0.3850
    • 25000:$0.3690
    • 50000:$0.3650
    FQU1N60CTU
    DISTI # 2453915    		ON SemiconductorMOSFET, N-CH, 600V, 1A, TO-251AA-3
    RoHS: Compliant    		2561
    • 5:£0.4980
    • 25:£0.4600
    • 100:£0.2850
    • 250:£0.2540
    • 500:£0.2230
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von FQU1N60CTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,65 $
    0,65 $
    10
    0,54 $
    5,45 $
    100
    0,35 $
    35,20 $
    1000
    0,28 $
    282,00 $
    2500
    0,24 $
    595,00 $
    10000
    0,23 $
    2 290,00 $
    25000
    0,22 $
    5 500,00 $
    50000
    0,22 $
    10 850,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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