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IRF6637TRPBF

IRF6637TRPBF
Mfr. #:
IRF6637TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6637TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6637TRPBF DatasheetIRF6637TRPBF Datasheet (P4-P6)IRF6637TRPBF Datasheet (P7-P9)IRF6637TRPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-MP
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
8.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
11 nC
Pd - Verlustleistung:
89 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Breite:
5.05 mm
Marke:
Infineon-Technologien
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
4800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001532298
Tags
IRF6637T, IRF6637, IRF663, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 7.7 mOhm 11 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On-Resistance, Rds(on):7.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MP RoHS Compliant: No
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 52 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ure Electronics
Single N-Channel 30 V 7.3 mOhm 11 nC HEXFET® Power Mosfet - DirectFET®
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N-CH MOSFET, HEXFET, 30V, 14A, DIRECTFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance
***ure Electronics
Single N-Channel 30 V 5.1 mOhm 9.2 nC HEXFET® Power Mosfet - DirectFET®
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 7.7 mOhm 17 nC HEXFET® Power Mosfet - DirectFET®
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N Channel, MOSFET, 30V, 14A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V ;RoHS Compliant: Yes
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 30V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***et
Trans MOSFET N-CH 30V 61A 5-Pin(4+Tab) LFPAK T/R
*** Americas
STANDARD MARKING * REEL PACK, SMD, 7'
Teil # Mfg. Beschreibung Aktie Preis
IRF6637TRPBF
DISTI # IRF6637TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 14A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4800:$0.7242
IRF6637TRPBF
DISTI # IRF6637TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 7-Pin Direct-FET MP T/R - Tape and Reel (Alt: IRF6637TRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Reel		Americas - 0
  • 4800:$0.7129
  • 9600:$0.6869
  • 19200:$0.6619
  • 28800:$0.6399
  • 48000:$0.6279
IRF6637TRPBF
DISTI # SP001532298		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 7-Pin Direct-FET MP T/R (Alt: SP001532298)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel		Europe - 0
  • 4800:€0.8999
  • 9600:€0.7359
  • 19200:€0.6749
  • 28800:€0.6229
  • 48000:€0.5779
IRF6637TRPBF
DISTI # 70019577		Infineon Technologies AGA 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MP PACKAGERATED AT 52
RoHS: Compliant		0
  • 4800:$1.3610
  • 9600:$1.3340
  • 24000:$1.2930
IRF6637TRPBF
DISTI # 942-IRF6637TRPBF		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
RoHS: Compliant		0
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.0700
  • 500:$0.9410
  • 1000:$0.7430
  • 2500:$0.6590
  • 4800:$0.6590
  • 9600:$0.6340
Bild Teil # Beschreibung
IRF6638TRPBF

Mfr.#: IRF6638TRPBF

OMO.#: OMO-IRF6638TRPBF

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Mfr.#: IRF6633TRPBF

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IRF6633ATR1PBF

Mfr.#: IRF6633ATR1PBF

OMO.#: OMO-IRF6633ATR1PBF

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Mfr.#: IRF6636

OMO.#: OMO-IRF6636-INFINEON-TECHNOLOGIES

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Mfr.#: IRF6636TR1PBF

OMO.#: OMO-IRF6636TR1PBF-INFINEON-TECHNOLOGIES

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Mfr.#: IRF6637

OMO.#: OMO-IRF6637-1190

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Mfr.#: IRF6637TR1

OMO.#: OMO-IRF6637TR1-INFINEON-TECHNOLOGIES

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IRF6638TR1PBF

Mfr.#: IRF6638TR1PBF

OMO.#: OMO-IRF6638TR1PBF-INFINEON-TECHNOLOGIES

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Mfr.#: IRF6631TRPBF

OMO.#: OMO-IRF6631TRPBF-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von IRF6637TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,63 $
1,63 $
10
1,39 $
13,90 $
100
1,07 $
107,00 $
500
0,94 $
470,50 $
1000
0,74 $
743,00 $
2500
0,66 $
1 647,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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