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IDW16G65C5XKSA1

IDW16G65C5XKSA1
Mfr. #:
IDW16G65C5XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
Schottky Diodes & Rectifiers SIC DIODES
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IDW16G65C5XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IDW16G65C5XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Wenn - Vorwärtsstrom:
16 A
Vrrm - Repetitive Sperrspannung:
650 V
Vf - Durchlassspannung:
1.5 V
Ifsm - Vorwärtsstoßstrom:
95 A
Aufbau:
Single
Technologie:
SiC
Ir - Gegenstrom:
0.8 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
CoolSiC
Verpackung:
Rohr
Marke:
Infineon-Technologien
Pd - Verlustleistung:
94 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
240
Unterkategorie:
Dioden & Gleichrichter
Handelsname:
CoolSiC
Vr - Sperrspannung:
650 V
Teil # Aliase:
IDW16G65C5 SP001632898
Gewichtseinheit:
0.211644 oz
Tags
IDW16, IDW1, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Diode Silicon Carbide Schottky 65 V 16A (DC) Through Hole PG-TO247-3-1
***nell
SIC SCHOTTKY DIODE, 650V, 16A, TO-247; Product Range: thinQ 5G 650V Series; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 650V; Continuous Forward Current If: 16A; Total Capacitive Charge Qc: 23nC; Diode Case Style: TO-247; No. of Pins: 3 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 16A; Forward Surge Current Ifsm Max: 95A; Forward Voltage VF Max: 1.7V; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Semiconductor Technology: SiC
***ineon
CoolSiC generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Teil # Mfg. Beschreibung Aktie Preis
IDW16G65C5XKSA1
DISTI # IDW16G65C5XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 16A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		431In Stock
  • 720:$4.6942
  • 240:$5.3907
  • 25:$6.2084
  • 10:$6.5110
  • 1:$7.2100
IDW16G65C5XKSA1
DISTI # SP001632898		Infineon Technologies AGSIC DIODES (Alt: SP001632898)
RoHS: Compliant
Min Qty: 1		Europe - 1
  • 1000:€3.2900
  • 500:€3.5900
  • 100:€3.6900
  • 50:€3.7900
  • 25:€3.9900
  • 10:€4.1900
  • 1:€4.4900
IDW16G65C5XKSA1
DISTI # IDW16G65C5XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDW16G65C5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$3.7900
  • 1440:$3.8900
  • 960:$3.9900
  • 480:$4.1900
  • 240:$4.2900
IDW16G65C5XKSA1
DISTI # 726-IDW16G65C5XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		230
  • 1:$7.2000
  • 10:$6.5100
  • 25:$6.2000
  • 100:$5.3900
  • 250:$5.1400
  • 500:$4.6900
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Mfr.#: SCS210KGHRC

OMO.#: OMO-SCS210KGHRC-ROHM-SEMI

 DIODE SCHOTTKY 1200V 10A TO220-2
Verfügbarkeit
Aktie:
177
Auf Bestellung:
2160
Menge eingeben:
Der aktuelle Preis von IDW16G65C5XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
7,20 $
7,20 $
10
6,51 $
65,10 $
25
6,20 $
155,00 $
100
5,39 $
539,00 $
250
5,14 $
1 285,00 $
500
4,69 $
2 345,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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