FJN3301RTA

FJN3301RTA
Mfr. #:
FJN3301RTA
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJN3301RTA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
4.7 kOhms
Typisches Widerstandsverhältnis:
1
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3 Kinked Lead
DC-Kollektor/Basisverstärkung hfe Min:
20
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
300 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FJN3301R
Verpackung:
Munitionspackung
DC-Stromverstärkung hFE Max:
20
Emitter- Basisspannung VEBO:
10 V
Höhe:
5.33 mm
Länge:
5.2 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
4.19 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Teil # Aliase:
FJN3301RTA_NL
Gewichtseinheit:
0.008466 oz
Tags
FJN3301, FJN330, FJN33, FJN3, FJN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ical
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin TO-92 Fan-Fold
***el Electronic
Transistors Switching - Resistor Biased NPN Si Transistor Epitaxial
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ical
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin TO-92 Fan-Fold
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***nell
TRANSISTOR, NPN, 50V, 0.1A, TO-92; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: TO-92; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***et
Trans Digital BJT NPN 50V 100mA 3-Pin TO-92 Ammo
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***ment14 APAC
TRANSISTOR, NPN, 50V, 0.1A, TO-92
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***nell
TRANSISTOR, NPN, 50V, 0.1A, TO-92; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: TO-92; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ical
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin TO-92 Fan-Fold
***ark
Pre-Biased "Digital" Transistor,50V V(BR)CEO,100mA I(C),TO-92 RoHS Compliant: Yes
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***ment14 APAC
TRANSISTOR, NPN, 50V, 0.1A, TO-92
***ure Electronics
NPN/50V/100mA/4.7K,10K FDQ_SSTR_BJT
***th Star Micro
NPN Epitaxial Silicon Transistor Product Highlights: Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7KW, R2=10KW) Complement to FJN4305R
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***nell
TRANSISTOR, NPN, 50V, 0.1A, TO-92; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 0.47(Ratio); RF Transistor Case: TO-92; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
***el Electronic
Linear Voltage Regulator IC 1 Output 500mA TO-220CP-3
***i-Key
TRANS PREBIAS NPN 300MW TO92-3
***i-Key Marketplace
SMALL SIGNAL BIPOLAR TRANSISTOR
***i-Key
TRANS NPN 45V 0.1A TO-92
Teil # Mfg. Beschreibung Aktie Preis
FJN3301RTA
DISTI # V79:2366_17791035
ON SemiconductorNPN/50V/100MA/4.7K 4.7K1540
  • 100000:$0.0219
  • 50000:$0.0256
  • 24000:$0.0277
  • 10000:$0.0298
  • 2000:$0.0347
  • 1000:$0.0451
  • 100:$0.0670
  • 10:$0.1608
  • 1:$0.2470
FJN3301RTA
DISTI # FJN3301RTATB-ND
ON SemiconductorTRANS NPN 50V 0.1A TO-92
RoHS: Compliant
Container: Tape & Box (TB)
Limited Supply - Call
    FJN3301RTA
    DISTI # FJN3301RTACT-ND
    ON SemiconductorTRANS NPN 50V 0.1A TO-92
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      FJN3301RTA
      DISTI # 30618392
      ON SemiconductorNPN/50V/100MA/4.7K 4.7K1760
      • 500:$0.0623
      • 100:$0.0928
      • 50:$0.2231
      • 26:$0.3098
      FJN3301RTA
      DISTI # 26117283
      ON SemiconductorNPN/50V/100MA/4.7K 4.7K1540
      • 1000:$0.0451
      • 376:$0.0670
      FJN3301RTAFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
      RoHS: Compliant
      110538
      • 1:$0.0300
      • 25:$0.0300
      • 100:$0.0300
      • 500:$0.0300
      • 1000:$0.0300
      FJN3301RTA
      DISTI # 512-FJN3301RTA
      ON SemiconductorBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      RoHS: Compliant
      3616
      • 1:$0.2600
      • 10:$0.1710
      • 100:$0.0720
      • 1000:$0.0490
      • 2000:$0.0380
      • 10000:$0.0330
      • 24000:$0.0310
      • 50000:$0.0290
      FJN3301RTA
      DISTI # C1S226600330741
      ON SemiconductorTrans Digital BJT NPN 50V 100mA 3-Pin TO-92 Ammo
      RoHS: Compliant
      1760
      • 500:$0.0489
      • 100:$0.0728
      • 50:$0.1750
      • 10:$0.2430
      • 1:$0.7780
      FJN3301RTA
      DISTI # C1S541901585637
      ON SemiconductorGP BJT1540
      • 1000:$0.0465
      • 500:$0.0680
      • 100:$0.0684
      Bild Teil # Beschreibung
      MAX275BEWP+

      Mfr.#: MAX275BEWP+

      OMO.#: OMO-MAX275BEWP-

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      Mfr.#: S29GL032N90TFI030

      OMO.#: OMO-S29GL032N90TFI030

      NOR Flash 3V 32Mb Float Gate two address 90s
      KSC1815YTA

      Mfr.#: KSC1815YTA

      OMO.#: OMO-KSC1815YTA

      Bipolar Transistors - BJT NPN Epitaxial Sil
      KSA1281YTA

      Mfr.#: KSA1281YTA

      OMO.#: OMO-KSA1281YTA

      Bipolar Transistors - BJT PNP/50V/2A
      SSM3K329R,LF

      Mfr.#: SSM3K329R,LF

      OMO.#: OMO-SSM3K329R-LF

      MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS
      FJN4301RTA

      Mfr.#: FJN4301RTA

      OMO.#: OMO-FJN4301RTA

      Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
      BT851

      Mfr.#: BT851

      OMO.#: OMO-BT851

      Bluetooth Modules (802.15.1) BTv4.2 Dual Mode USB Dongle
      SSM3K329R,LF

      Mfr.#: SSM3K329R,LF

      OMO.#: OMO-SSM3K329R-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR

      Trans MOSFET N-CH Si 30V 3.5A 3-Pin SOT-23F
      GRM033R61A105ME15D

      Mfr.#: GRM033R61A105ME15D

      OMO.#: OMO-GRM033R61A105ME15D-MURATA-ELECTRONICS

      Cap Ceramic 1uF 10V X5R 20% Pad SMD 0201 85C T/R
      FJN4301RTA

      Mfr.#: FJN4301RTA

      OMO.#: OMO-FJN4301RTA-ON-SEMICONDUCTOR

      Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von FJN3301RTA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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